J211-D74Z

J211 / MMBFJ211 — N-Channel RF Amplifier J211 / MMBFJ211 N-Channel RF Amplifier Description This device is designed for HF/VHF mixer/amplifier and applications where process 50 is not adequate. Sufficient gain and low-noise for sensitive receivers. Sourced from process 90. G TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Drain 2. Source 3. Gate S SOT-23 D Note: Source & Drain are interchangeable 3 Bent Lead Tape & Reel Ammo Packing Figure 1. J211 Device Package Figure 2. MMBFJ211 Device Package Ordering Information Part Number Top Mark Package Packing Method J211-D74Z J211 TO-92 3L Ammo MMBFJ211 62W SOT-23 3L Tape and Reel © 1997 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: J211-D74Z/D Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA -55 to 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Max. Parameter (3) J211 MMBFJ211(3) Unit Total Device Dissipation 350 225 mW Derate Above 25°C 2.8 1.8 mW/°C RθJC Thermal Resistance, Junction-to-Case 125 RθJA Thermal Resistance, Junction-to-Ambient 357 PD °C/W 556 °C/W Note: 3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 Gate Reverse Current VGS = 15 V, VDS = 0 Gate-Source Cut-Off Voltage VDS = 15 V, ID = 1.0 nA -25 V -100 pA -2.5 -4.5 V 7.0 20 mA 7000 12000 μmhos 200 μmhos On Characteristics IDSS Zero-Gate Voltage Drain Current(4) VDS = 15 V, VGS = 0 Small Signal Characteristics gfs goss Common Source Forward Transconductance VDS = 15 V, VGS = 0, f = 1.0 kHz Common Source Output Conductance VDS = 15 V, VGS = 0, f = 1.0 kHz Note: 4. Pulse test: pulse width ≤ 300 μs www.onsemi.com 2 J211 / MMBFJ211 — N-Channel RF Amplifier Absolute Maximum Ratings(1), (2) Figure 3. Parameter Interactions Figure 4. Common Drain-Source Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics Figure 7. Leakage Current vs. Voltage Figure 8. Noise Voltage vs. Frequency www.onsemi.com 3 J211 / MMBFJ211 — N-Channel RF Amplifier Typical Performance Characteristics Figure 9. Transconductance vs. Drain Current Figure 10. Output Conductance vs. Drain Current Figure 11. Capacitance vs. Voltage www.onsemi.com 4 J211 / MMBFJ211 — N-Channel RF Amplifier Typical Performance Characteristics (Continued) os) Figure 12. Input Admittance Figure 13. Forward Transadmittance Figure 14. Output Admittance Figure 15. Reverse Transadmittance www.onsemi.com 5 J211 / MMBFJ211 — N-Channel RF Amplifier Common Source Characteristics Figure 16. Input Admittance Figure 17. Forward Transadmittance Figure 18. Output Admittance Figure 19. Reverse Transadmittance www.onsemi.com 6 J211 / MMBFJ211 — N-Channel RF Amplifier Common Gate Characteristics J211 / MMBFJ211 — N-Channel RF Amplifier Physical Dimensions Figure 20. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form www.onsemi.com 7 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 SCALE: 2X Figure 21. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE www.onsemi.com 8 J211 / MMBFJ211 — N-Channel RF Amplifier Physical Dimensions (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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