J309_D26Z

J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units J309-J310 625 5.0 125 *MMBFJ309-310 350 2.8 357 556 mW mW/°C °C/W °C/W (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min IG = - 1.0 µA, VDS = 0 VGS = - 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 125°C VDS = 10 V, ID = 1.0 nA - 25 Typ Max Units OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current VGS(off) Gate-Source Cutoff Voltage V - 1.0 - 1.0 nA µA 309 310 - 1.0 - 2.0 - 4.0 - 6.5 V V 309 310 12 24 30 60 1.0 mA mA V ON CHARACTERISTICS IDSS VGS(f) Zero-Gate Voltage Drain Current* Gate-Source Forward Voltage VDS = 10 V, VGS = 0 VDS = 0, IG = 1.0 mA J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier SMALL SIGNAL CHARACTERISTICS Re(yis) Re(yos) Gpg Re(yfs) Re(yig) Common-Source Input Conductance Common-Source Output Conductance Common-Gate Power Gain goss 0.7 0.5 0.25 VDS = 10, ID = 10 mA, f = 100 MHz 16 dB 12 mmhos 12 mmhos Common-Source Output Conductance Common-Gate Forward Conductance VDS = 10, ID = 10 mA, f = 1.0 kHz 309 310 VDS = 10, ID = 10 mA, f = 1.0 kHz 20,000 µmhos 18,000 µmhos 150 µmhos 10,000 8000 Cdg Drain-Gate Capacitance VDS = 10, ID = 10 mA, f = 1.0 kHz 309 310 VDS = 10, ID = 10 mA, f = 1.0 kHz 309 310 VDS = 0, VGS = - 10 V, f = 1.0 MHz Csg NF Source-Gate Capacitance VDS = 0, VGS = - 10 V, f = 1.0 MHz 4.1 Noise Figure 3.0 en Equivalent Short-Circuit Input Noise Voltage VDS = 10 V, ID = 10 mA, f = 450 MHz VDS = 10 V, ID = 10 mA, f = 100 Hz gfg gog mmhos mmhos mmhos Common-Source Forward VDS = 10, ID = 10 mA, f = 100 MHz Transconductance Common-Gate Input Conductance VDS = 10, ID = 10 mA, f = 100 MHz Common-Source Forward Transconductance gfs VDS = 10, ID = 10 mA, f = 100 MHz 309 310 VDS = 10, ID = 10 mA, f = 100 MHz Common-Gate Output Conductance *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 13,000 12,000 µmhos µmhos 100 150 2.0 2.5 µmhos µmhos pF 5.0 6.0 pF dB nV/√Hz 5 (continued) Typical Characteristics Transfer Characteristics Transfer Characteristics Input Admittance Transfer Characteristics Transfer Characteristics Forward Transadmittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical Characteristics (continued) Common Drain-Source Output Conductance vs. Drain Current Output Admittance Capacitance vs. Voltage J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier 5 Noise Voltage vs. Frequency Reverse Transadmittance (continued) Typical Characteristics (continued) Transconductance vs. Drain Current Parameter Interactions Leakage Current vs. Voltage P D - POWER DISSIPATION (mW) Power Dissipation vs Ambient Temperature 700 600 TO-92 500 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G