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KA5H0380RYDTU

KA5H0380RYDTU

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO220-4

  • 描述:

    IC SWIT PWM CM OVP UVLO HV TO220

  • 数据手册
  • 价格&库存
KA5H0380RYDTU 数据手册
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.fairchildsemi.com KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS) Features Description • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter Precision Fixed Operating Frequency (100/67/50kHz) Low Start-up Current(Typ. 100uA) Pulse by Pulse Current Limiting Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode Applications • SMPS for VCR, SVR, STB, DVD & DVCD • SMPS for Printer, Facsimile & Scanner • Adaptor for Camcorder TO-220F-4L 1 1. GND 2. Drain 3. VCC 4. FB Internal Block Diagram #3 VCC 32V 5V Vref Internal bias #2 DRAIN SFET Good logic OSC 9V 5μA S 1mA #4 FB R 2.5R 1R − 0.1V S − Thermal S/D + 27V L.E.B + + 7.5V − Q R Q #1 GND Power on reset OVER VOLTAGE S/D Rev.1.0.7 ©2003 Fairchild Semiconductor Corporation KA5X03XX-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit VDGR 650 V VGS ±30 V KA5H0365R, KA5M0365R, KA5L0365R Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage (1) IDM 12.0 ADC Continuous Drain Current (TC=25°C) ID 3.0 ADC Continuous Drain Current (TC=100°C) ID 2.4 ADC EAS 358 mJ VCC,MAX 30 V VFB -0.3 to VSD V PD 75 W Derating 0.6 W/°C Operating Junction Temperature. TJ +150 °C Operating Ambient Temperature. TA -40 to +85 °C TSTG -55 to +150 °C VDGR 800 V VGS ±30 V IDM 12.0 ADC Continuous Drain Current (TC=25°C) ID 3.0 ADC Continuous Drain Current (TC=100°C) ID 2.1 ADC Drain Current Pulsed Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Storage Temperature Range. KA5H0380R, KA5M0380R, KA5L0380R Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Single Pulsed Avalanche Energy Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation (2) EAS 95 mJ VCC,MAX 30 V VFB -0.3 to VSD V PD 75 W Derating 0.6 W/°C Operating Junction Temperature. TJ +150 °C Operating Ambient Temperature. TA -40 to +85 °C TSTG -55 to +150 °C Storage Temperature Range. Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13μH, starting Tj = 25°C 2 KA5X03XX-SERIES Electrical Characteristics (SenseFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50μA 650 - - V VDS=Max. Rating, VGS=0V - - 50 μA Zero Gate Voltage Drain Current IDSS VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 μA RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω gfs VDS=50V, ID=0.5A 2.0 - - S - 720 - KA5H0365R, KA5M0365R, KA5L0365R Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn On Delay Time td(on) Rise Time - 40 - - 40 - - 150 - - 100 - - 150 - - 42 - - - 34 - 7.3 - - 13.3 - 800 - - V VDS=Max. Rating, VGS=0V - - 250 μA VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 1000 μA RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0 Ω gfs VDS=50V, ID=0.5A 1.5 2.5 - S - 779 - tr Turn Off Delay Time td(off) Fall Time VGS=0V, VDS=25V, f=1MHz tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) pF nS nC KA5H0380R, KA5M0380R, KA5L0380R Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn On Delay Time td(on) Rise Time Turn Off Delay Time Fall Time tr td(off) tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS=0V, ID=50μA VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) - 75.6 - - 24.9 - - 40 - - 95 - - 150 - - 60 - - - 34 - 7.2 - - 12.1 - pF nS nC Note: 1. Pulse test: Pulse width ≤ 300μS, duty ≤ 2% 1 2. S = ---R 3 KA5X03XX-SERIES Electrical Characteristics (Control Part) (Continued) (Ta = 25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB=GND 14 15 16 V Stop Threshold Voltage VSTOP VFB=GND 8.4 9 9.6 V Initial Accuracy FOSC KA5H0365R KA5H0380R 90 100 110 kHz Initial Accuracy FOSC KA5M0365R KA5M0380R 61 67 73 kHz Initial Accuracy FOSC KA5L0365R KA5L0380R 45 50 55 kHz - ±5 ±10 % OSCILLATOR SECTION Frequency Change With Temperature (2) Maximum Duty Cycle Maximum Duty Cycle - -25°C≤Ta≤+85°C Dmax KA5H0365R KA5H0380R 62 67 72 % Dmax KA5M0365R KA5M0380R KA5L0365R KA5L0380R 72 77 82 % Ta=25°C, 0V
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