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September 2014
KA79XX / KA79XXA / LM79XX
3-Terminal 1 A Negative Voltage Regulator
Features
Description
• Output Current in Excess of 1 A
• Output Voltages of: -5 V, -6 V, -8 V, -9 V, -12 V, -15 V,
-18 V, -24 V
• Internal Thermal Overload Protection
• Short-Circuit Protection
• Output Transistor Safe Operating Area Compensation
The KA79XX / KA79XXA / LM79XX series of three-terminal negative regulators are available in a TO-220 package with several fixed output voltages, making them
useful in a wide range of applications. Each type employs
internal current limiting, thermal shutdown, and safe
operating area protection.
TO-220
Input
1
1. GND 2. Input 3. Output
Ordering Information
Product Number
Output Voltage
Tolerance
Package
Packing Method
Operating
Temperature
Rail
0 to +125C
KA7905TU
KA7906TU
KA7908TU
KA7909TU
KA7912TU
±4%
KA7915TU
TO-220
(Dual Gauge)
KA7918TU
KA7924TU
KA7912ATU
KA7915ATU
±2%
LM7905CT
LM7908CT
LM7909CT
LM7910CT
LM7912CT
±4%
TO-220
(Single Gauge)
LM7915CT
LM7918CT
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
Block Diagram
GND
R1
VOLTAGE
REFERENCE
R2
Output
Out
+
Q1
Q2
I1
PROTECTION
CIRCUITRY
I2
Rsc
In
Input
Figure 1. Block Diagram
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VI
R
R
Parameter
Value
Input Voltage
Unit
-35
V
JC
Thermal Resistance, Junction-Case(1)
5
C/W
JA
Thermal Resistance, Junction-Air(1, 2)
65
C/W
0 to +125
C
- 65 to +150
C
TOPR
Operating Temperature Range
TSTG
Storage Temperature Range
Notes:
1. Thermal resistance test board, size: 76.2 mm x 114.3 mm x 1.6 mm(1S0P), JEDEC standard:
JESD51-3, JESD51-7.
2. Assume no ambient airflow.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
2
Electrical Characteristics (KA7905 / LM7905)
(VI = -10 V, IO = 500 mA, 0C
Symbol
TJ
+125C, CI = 2.2 F, CO = 1 F; unless otherwise specified.)
Parameter
Conditions
Min.
Typ.
Max.
TJ = +25C
-4.80
-5.00
-5.20
Output Voltage
IO = 5 mA to 1 A, PO 15 W,
VI = -7 V to -20 V
-4.75
-5.00
-5.25
VO
Line Regulation(3)
TJ = +25C
VI = -7 V to -25 V
35
100
VI = -8 V to -12 V
8
50
VO
Load Regulation(3)
TJ = +25C, IO = 5 mA to 1.5 A
10
100
TJ = +25C, IO = 250 mA to 750 mA
3
50
IQ
Quiescent Current
TJ = +25C
3
6
IQ
Quiescent Current
Change
IO = 5 mA to 1 A
0.05
0.50
VI = -8 V to -25 V
0.10
0.80
IO = 5 mA
-0.4
VO
Vo/ T
Temperature Coefficient
of VD
VN
Output Noise Voltage
f = 10 Hz to 100 kHz, TA = +25C
RR
Ripple Rejection
f = 120 Hz, VI = 10 V
VD
Dropout Voltage
TJ = +25C, IO = 1 A
ISC
Short-Circuit Current
IPK
Peak Current
Unit
V
mV
mV
mA
mA
mV/C
40
V
60
dB
2
V
TJ = +25C, VI = -35 V
300
mA
TJ = +25C
2.2
A
54
Note:
3. Load and line regulation are specified at constant junction temperature. Changes in V O due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
3
Electrical Characteristics (KA7906)
(VI = -11 V, IO = 500 mA, 0C
Symbol
TJ
+125C, CI = 2.2 F, CO = 1 F; unless otherwise specified.)
Parameter
Conditions
Min.
Typ.
Max.
-5.75
-6.00
-6.25
-5.70
-6.00
-6.30
VI = -8 V to -25 V
10
120
VI = -9 V to -13 V
5
60
TJ = +25C, IO = 5 mA to 1.5 A
10
120
TJ = +25C, IO = 250 mA to 750 mA
3
60
3
6
TJ = +25C
VO
Output Voltage
IO = 5 mA to 1 A, PO
VI = -9 V to -21 V
VO
Line Regulation(4)
TJ = +25C
VO
Load Regulation(4)
IQ
Quiescent Current
TJ = +25C
IQ
Quiescent Current
Change
IO = 5 mA to 1 A
0.05
0.50
VI = -8 V to -25 V
0.10
1.30
IO = 5 mA
-0.5
Vo/ T
Temperature Coefficient
of VD
15 W,
VN
Output Noise Voltage
f = 10 Hz to 100 kHz, TA =+25C
RR
Ripple Rejection
f = 120 Hz, VI = 10 V
VD
Dropout Voltage
TJ = +25C, IO = 1 A
ISC
Short-Circuit Current
IPK
Peak Current
Unit
V
mV
mV
mA
mA
mV/C
130
V
60
dB
2
V
TJ = +25C, VI = -35 V
300
mA
TJ = +25C
2.2
A
54
Note:
4. Load and line regulation are specified at constant junction temperature. Changes in V O due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
4
Electrical Characteristics (KA7908 / LM7908)
(VI = -14 V, IO = 500 mA, 0C
Symbol
TJ
+125C, CI = 2.2 F, CO =1F; unless otherwise specified.)
Parameter
Conditions
Min.
Typ.
Max.
-7.7
-8.0
-8.3
-7.6
-8.0
-8.4
VI = -10.5 V to -25 V
10
160
VI = -11 V to -17 V
5
80
TJ = +25C, IO = 5 mA to 1.5 A
12
160
TJ = +25C, IO = 250 mA to 750 mA
4
80
3
6
TJ = +25C
VO
Output Voltage
IO = 5 mA to 1 A, PO
VI = -10 V to -23 V
VO
Line Regulation(5)
TJ = +25C
VO
Load Regulation(5)
IQ
Quiescent Current
TJ = +25C
IQ
Quiescent Current
Change
IO = 5 mA to 1 A
0.05
0.50
VI = -10.5 V to -25 V
0.10
1.00
Temperature Coefficient
of VD
IO = 5 mA
-0.6
Vo/ T
15 W,
VN
Output Noise Voltage
f = 10 Hz to 100 kHz, TA = +25C
RR
Ripple Rejection
f = 120 Hz, VI = 10 V
VD
Dropout Voltage
TJ = +25C, IO = 1 A
ISC
Short-Circuit Current
IPK
Peak Current
Unit
V
mV
mV
mA
mA
mV/C
175
V
60
dB
2
V
TJ = +25C, VI = -35 V
300
mA
TJ = +25C
2.2
A
54
Note:
5. Load and line regulation are specified at constant junction temperature. Changes in V O due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
5
Electrical Characteristics (KA7909 / LM7909)
(VI = -15 V, IO = 500 mA, 0C
Symbol
TJ
+125C, CI = 2.2F, CO =1F; unless otherwise specified.)
Parameter
Conditions
Min.
Typ.
Max.
-8.7
-9.0
-9.3
-8.6
-9.0
-9.4
VI = -11.5 V to -26 V
10
180
VI = -12 V to -18 V
5
90
TJ = +25C, IO = 5 mA to 1.5 A
12
180
TJ = +25C, IO = 250 mA to 750 mA
4
90
3
6
TJ = +25C
VO
Output Voltage
IO = 5 mA to 1 A, PO
VI = -1.5 V to -23 V
VO
Line Regulation(6)
TJ = +25C
VO
Load Regulation(6)
IQ
Quiescent Current
TJ = +25C
IQ
Quiescent Current
Change
IO = 5 mA to 1 A
0.05
0.50
VI = -11.5 V to -26 V
0.10
1.00
IO = 5 mA
-0.6
Vo/ T
Temperature Coefficient
of VD
15 W,
VN
Output Noise Voltage
f = 10 Hz to 100 kHz, TA = +25C
RR
Ripple Rejection
f = 120 Hz, VI = 10 V
VD
Dropout Voltage
TJ = +25C, IO = 1 A
ISC
Short-Circuit Current
IPK
Peak Current
Unit
V
mV
mV
mA
mA
mV/C
175
V
60
dB
2
V
TJ = +25C, VI = -35 V
300
mA
TJ = +25C
2.2
A
54
Note:
6. Load and line regulation are specified at constant junction temperature. Changes in V O due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
6
Electrical Characteristics (LM7910)
(VI = -17 V, IO = 500 mA, 0C
Symbol
TJ
+125C, CI = 2.2 F, CO =1 F; unless otherwise specified.)
Parameter
Conditions
TJ = +25C
VO
VO
VO
IQ
IQ
Output Voltage
IO = 5 mA to 1A, Pd
VI = -12 V to -28 V
Line Regulation(7)
TJ = +25C
Load Regulation(7)
15 W,
Typ.
Max.
-9.6
-10.0
-10.4
-9.5
-10.0
-10.5
VI = -12.5 V to -28 V
12
200
VI = -14 V to -20 V
6
100
TJ = +25C,
IO = 5 mA to 1.5 A
12
200
TJ = +25C,
IO = 250 mA to 750 mA
4
100
TJ = +25C
3
6
Quiescent Current
Change
IO = 5 mA to 1 A
0.05
0.50
VI = -12.5 V to -28 V
0.10
1.00
IO = 5 mA
VN
Output Noise Voltage
10 Hz
RR
Ripple Rejection
f = 120 Hz, VI = 10 V
VD
Dropout Voltage
TJ = +25C, IO = 1 A
ISC
Short-Circuit Current
IPK
Peak Current
Unit
V
mV
mV
Quiescent Current
Temperature Coefficient
of VO
Vo/ T
Min.
mA
mA
-1
mV/C
280
V
60
dB
2
V
TJ = +25C, VI = -35 V
300
mA
TJ = +25C
2.2
A
f
100 kHz, TA = +25C
54
Note:
7. Load and line regulation are specified at constant junction temperature. Changes in V O due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
7
Electrical Characteristics (KA7912 / LM7912)
(VI = -19 V, IO = 500 mA, 0C
Symbol
TJ
+125C, CI = 2.2 F, CO = 1 F; unless otherwise specified.)
Parameter
Conditions
Min.
Typ.
Max.
-11.5
-12.0
-12.5
-11.4
-12.0
-12.6
VI = -14.5 V to -30 V
12
240
VI = -16 V to -22 V
6
120
TJ = +25C, IO = 5 mA to 1.5 A
12
240
TJ = +25C, IO = 250 mA to 750 mA
4
120
3
6
TJ = +25C
VO
Output Voltage
IO = 5 mA to 1 A, PO
VI = -15.5 V to -27 V
VO
Line Regulation(8)
TJ = +25C
VO
Load Regulation(8)
IQ
Quiescent Current
TJ = +25C
IQ
Quiescent Current
Change
IO = 5 mA to 1 A
0.05
0.50
VI = -14.5 V to -30 V
0.10
1.00
IO = 5 mA
-0.8
Vo/ T
Temperature Coefficient
of VD
15 W
VN
Output Noise Voltage
f = 10 Hz to 100 kHz, TA = +25C
RR
Ripple Rejection
f = 120 Hz, VI = 10 V
VD
Dropout Voltage
TJ = +25C, IO = 1 A
ISC
Short-Circuit Current
IPK
Peak Current
Unit
V
mV
mV
mA
mA
mV/C
200
V
60
dB
2
V
TJ = +25C, VI = -35 V
300
mA
TJ = +25C
2.2
A
54
Note:
8. Load and line regulation are specified at constant junction temperature. Changes in V O due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
8
Electrical Characteristics (KA7915 / LM7915)
(VI = -23 V, IO = 500 mA, 0C TJ
Symbol
+125C, CI = 2.2 F, CO = 1 F; unless otherwise specified.)
Parameter
Conditions
Min.
Typ.
Max.
-14.40
-15.00
-15.60
-14.25
-15.00
-15.75
VI = -17.5 V to -30 V
12
300
VI = -20 V to -26 V
6
150
TJ = +25C, IO = 5 mA to 1.5 A
12
300
TJ = +25C, IO = 250 mA to 750 mA
4
150
3
6
TJ = +25C
VO
Output Voltage
IO = 5 mA to 1 A, PO
VI = -18 V to -30 V
VO
Line Regulation(9)
TJ = +25C
VO
Load Regulation(9)
IQ
Quiescent Current
TJ = +25C
IQ
Quiescent Current
Change
IO = 5 mA to 1 A
0.05
0.50
VI = -17.5 V to -30 V
0.10
1.00
IO = 5 mA
-0.9
Vo/ T
Temperature Coefficient
of VD
15 W
VN
Output Noise Voltage
f = 10 Hz to 100 kHz, TA = +25C
RR
Ripple Rejection
f = 120 Hz, VI = 10 V
VD
Dropout Voltage
TJ = +25C, IO = 1 A
ISC
Short-Circuit Current
IPK
Peak Current
Unit
V
mV
mV
mA
mA
mV/C
250
V
60
dB
2
V
TJ = +25C, VI = -35 V
300
mA
TJ = +25C
2.2
A
54
Note:
9. Load and line regulation are specified at constant junction temperature. Changes in V O due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
9
Electrical Characteristics (KA7918 / LM7918)
(VI = -27 V, IO = 500 mA, 0C
Symbol
TJ
+125C, CI = 2.2 F, CO =1F, unless otherwise specified.)
Parameter
Conditions
Min.
Typ.
Max.
-17.3
-18.0
-18.7
-17.1
-18.0
-18.9
VI = -21 V to -33 V
15
360
VI = -24 V to -30 V
8
180
TJ = +25C, IO = 5 mA to 1.5 A
15
360
TJ = +25C, IO = 250 mA to 750 mA
5
180
3
6
TJ = +25C
VO
Output Voltage
IO = 5 mA to 1 A, PO
VI = -22.5 V to -33 V
VO
Line Regulation(10)
TJ = +25C
VO
Load Regulation(10)
IQ
Quiescent Current
TJ = +25C
IQ
Quiescent Current
Change
IO = 5 mA to 1 A
0.05
0.50
VI = -21 V to -33 V
0.10
1.00
Vo/ T
Temperature Coefficient
of VD
IO = 5 mA
15 W
Unit
V
mV
mV
mA
mA
-1
mV/C
300
V
60
dB
2
V
VN
Output Noise Voltage
f = 10 Hz to 100 kHz, TA = +25C
RR
Ripple Rejection
f = 120 Hz, VI = 10 V
VD
Dropout Voltage
TJ = +25C, IO = 1 A
ISC
Short-Circuit Current
TJ = +25C, VI = -35 V
300
mA
IPK
Peak Current
TJ = +25C
2.2
A
54
Note:
10. Load and line regulation are specified at constant junction temperature. Changes in V O due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
10
Electrical Characteristics (KA7924)
(VI = -33 V, IO = 500 mA, 0C
Symbol
TJ
+125C, CI = 2.2 F, CO = 1 F; unless otherwise specified.)
Parameter
Conditions
TJ = +25C
VO
Output Voltage
IO = 5 mA to 1 A, PO
VI = -27 V to -38 V
VO
Line Regulation(11)
TJ = +25C
VO
Load Regulation(11)
IQ
IQ
Vo/ T
15 W,
Min.
Typ.
Max.
-23.0
-24.0
-25.0
-22.8
-24.0
-25.2
VI = -27 V to -38 V
15
480
VI = -30 V to -36 V
8
180
TJ = +25C, IO = 5 mA to 1.5 A
15
480
TJ = +25C, IO = 250 mA to 750 mA
5
240
Quiescent Current
TJ = +25C
3
6
Quiescent Current
Change
IO = 5 mA to 1 A
0.05
0.50
VI = -27 V to -38 V
0.10
1.00
Temperature Coefficient
of VD
IO = 5 mA
Unit
V
mV
mV
mA
mA
-1
mV/C
400
V
60
dB
2
V
VN
Output Noise Voltage
f = 10 Hz to 100 kHz, TA = +25C
RR
Ripple Rejection
f = 120 Hz, VI = 10 V
VD
Dropout Voltage
TJ = +25C, IO = 1 A
ISC
Short-Circuit Current
TJ = +25C, VI = -35 V
300
mA
IPK
Peak Current
TJ = +25C
2.2
A
54
Note:
11. Load and line regulation are specified at constant junction temperature. Changes in V O due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
11
Electrical Characteristics (KA7912A)
(VI = -19 V, IO = 500 mA, 0C
Symbol
TJ
+125C, CI = 2.2 F, CO =1F; unless otherwise specified.)
Parameter
Conditions
Min.
Typ.
Max.
-11.75
-12.00
-12.25
-11.50
-12.00
-12.50
VI = -14.5 V to -27 V,
Io = 1 A
12
120
VI= -16 V to -22 V,
Io = 1 A
6
60
VI = -14.8 V to -30 V
12
120
VI = -16 V to -22 V, Io = 1 A
12
120
TJ = +25C, IO = 5 mA to 1.5 A
12
150
TJ = +25C, IO = 250 mA to 750 mA
4
75
3
6
TJ = +25C
VO
Output Voltage
IO = 5 mA to 1 A, PO
VI = -15.5 V to -27 V
TJ = +25C
VO
Line Regulation(12)
15 W,
Unit
V
mV
VO
Load Regulation(12)
IQ
Quiescent Current
TJ = +25C
IQ
Quiescent Current
Change
IO = 5 mA to 1 A
0.05
0.50
VI = -15 V to -30 V
0.10
1.00
Temperature Coefficient
of VD
IO = 5 mA
-0.8
mV/C
VN
Output Noise Voltage
f = 10 Hz to 100 kHz, TA = +25C
200
V
RR
Ripple Rejection
f = 120 Hz, VI = 10 V
60
dB
Vo/ T
54
mV
mA
mA
VD
Dropout Voltage
TJ = +25C, IO = 1 A
2
V
ISC
Short-Circuit Current
TJ = +25C, VI = -35 V
300
mA
IPK
Peak Current
TJ = +25C
2.2
A
Note:
12. Load and line regulation are specified at constant junction temperature. Changes in V O due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
12
Electrical Characteristics (KA7915A)
(VI = -23 V, IO = 500 mA, 0C
Symbol
TJ
+125C, CI = 2.2 F, CO = 1 F; unless otherwise specified.)
Parameter
Conditions
Min.
Typ.
Max.
-14.7
-15.0
-15.3
-14.4
-15.0
-15.6
VI = -17.5 V to -30 V,
Io = 1 A
12
150
VI = -20 V to -26 V,
Io = 1 A
6
75
VI = -17.9 V to -30 V
12
150
VI = -20 V to -26 V, Io = 1 A
6
150
TJ = +25C, IO = 5 mA to 1.5 A
12
150
TJ = +25C, IO = 250 mA to 750 mA
4
75
3
6
TJ = +25C
VO
Output Voltage
IO = 5 mA to 1 A, PO
VI = -18 V to -30 V
TJ = +25C
VO
Line Regulation(13)
15 W,
Unit
V
mV
VO
Load Regulation(13)
IQ
Quiescent Current
TJ = +25C
IQ
Quiescent Current
Change
IO = 5 mA to 1 A
0.05
0.50
VI = -18.5 V to -30 V
0.10
1.00
Temperature Coefficient
of VD
IO = 5 mA
-0.9
mV/C
VN
Output Noise Voltage
f = 10 Hz to 100 kHz, TA = +25C
250
V
RR
Ripple Rejection
f = 120 Hz, VI = 10 V
60
dB
Vo/ T
54
mV
mA
mA
VD
Dropout Voltage
TJ = +25C, IO = 1 A
2
V
ISC
Short-Circuit Current
TJ = +25C, VI = -35 V
300
mA
IPK
Peak Current
TJ = +25C
2.2
A
Note:
13. Load and line regulation are specified at constant junction temperature. Changes in V O due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
13
Typical Performance Characteristics
••••
••••••
Vin=10V
Io=40mA
Ou • • • • • • • •
tp
••
ut
Vo
lta • • • • • • • •
ge
[- • • • • • •
V]
Vin=25V
Io=100mA
••••••••
Io=1.5A
Lo • • • •
ad • • • •
Re • •
gul • •
ati • •
on • •
[m
••
V]
Io=0.75A
••••
••••
••••••
••••
•••
•••
•
••
••
••
•••
•••
•••••••••
•••
TA, Ambient Temperature [ oC]
Figure 2. Output Voltage
••
••••••
••
••••••
••
••••••
••
••••••
••
••••••
••
•••
•••
•
••
••
••
•••
TA, Ambient Temperature [ oC]
•••••
Figure 3. Load Regulation
••
••••••
••
••••••
••
••••••
Io=1A
••
••••••
••
•••
•
••
••
••
•••
TA, Ambient Temperature [oC]
•
••••••••
Figure 4. Quiescent Current
•••
•••
•
••
••
••
•••
TA, Ambient Temperature [oC]
•••••••••••
Figure 5. Dropout Voltage
••••••
••••••••
Sh • • • • • •
ort • • • • • • • •
Cir • • • • • •
cui • • • • • • • •
••••••
t
••••••••
Cu • • • • • •
rre • • • • • • • •
nt • • • • • •
[A] • • • • • • • •
••
••••••••••
••••••••
•••
•••
•
••
••
••
•••
TA, Ambient Temperature [ oC]
••••••••
Figure 6. Short-Circuit Current
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
14
Typical Applications
CI
+
2.2 F
+
1 F
1
2
Input
Co
3
KA79XX
LM79XX
Output
Figure 7. Negative Fixed Output Regulator
1
+15 V
KA7812
LM7812
+
C1
3
Co +
2
0.33 F
+12 V
1 F
*
1N4001
GND
+ 2.2 F
C1
-15 V
1 F +
Co
1
2
KA7912
LM7912
3
*
1N4001
-12 V
• V / 1 A)
Figure 8. Split Power Supply (• 12
Notes:
14. To specify an output voltage, substitute voltage value for "XX".
15. CI is required if the regulator is located an appreciable distance from the power supply filter. For value given,
capacitor must be solid tantalum. If aluminium electronics are used, at least ten times the value shown should be
selected.
16. CO improves stability and transient response. If large capacitors are used, a high-current diode from input to
output (1N4001 or similar) should be introduced to protect the device from momentary input short circuit.
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
15
Physical Dimensions
Figure 9. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB (ACTIVE)
© 2002 Fairchild Semiconductor Corporation
KA79XX / KA79XXA / LM79XX Rev. 1.1.1
www.fairchildsemi.com
16
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