KAI-02050-ABA-FD-AE

KAI-02050 1600 (H) x 1200 (V) Interline CCD Image Sensor Description The KAI−02050 Image Sensor is a 2−megapixel CCD in a 2/3″ optical format. Based on the TRUESENSE 5.5 micron Interline Transfer CCD Platform, the sensor features broad dynamic range, excellent imaging performance, and a flexible readout architecture that enables use of 1, 2, or 4 outputs for full resolution readout up to 68 frames per second. A vertical overflow drain structure suppresses image blooming and enables electronic shuttering for precise exposure control. Other features include low dark current, negligible lag, and low smear. The sensor shares common PGA pin-out and electrical configurations with other devices based on the TRUESENSE 5.5 micron Interline Transfer CCD Platform, allowing a single camera design to support multiple members of this sensor family. www.onsemi.com Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Figure 1. KAI−02050 Interline CCD Image Sensor Architecture Interline CCD, Progressive Scan Total Number of Pixels 1684 (H) × 1264 (V) Number of Effective Pixels 1640 (H) × 1240 (V) Number of Active Pixels 1600 (H) × 1200 (V) Pixel Size 5.5 mm (H) × 5.5 mm (V) Active Image Size 8.8 mm (H) × 6.6 mm (V) 11.0 mm (diagonal), 2/3″ Optical Format Aspect Ratio 4:3 Number of Outputs 1, 2, or 4 Charge Capacity 20,000 electrons Output Sensitivity 34 mV/e− Quantum Efficiency Mono (−ABA) R, G, B (−FBA) R, G, B (−CBA) 44% 29%, 37%, 39% 31%, 37%, 38% Read Noise (f = 40 MHz) 12 e− rms Dark Current Photodiode / VCCD 7 / 100 e−/s Dark Current Doubling Temp Photodiode / VCCD 7°C / 9°C Dynamic Range 64 dB Charge Transfer Efficiency 0.999999 Blooming Suppression > 300 X Smear −100 dB Image Lag < 10 electrons Maximum Pixel Clock Speed 40 MHz Maximum Frame Rates Quad / Dual / Single Output 68 / 34 / 18 fps Features • • • • • • • • Color or Monochrome Configurations Progressive Scan Readout Flexible Readout Architecture High Frame Rate High Sensitivity Low Noise Architecture Excellent Smear Performance Package Pin Reserved for Device Identification Applications • Industrial Imaging • Medical Imaging • Security ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Package 68 Pin PGA 64 Pin CLCC Cover Glass AR Coated, 2-Sides or Clear Glass NOTE: All Parameters are specified at T = 40°C unless otherwise noted. © Semiconductor Components Industries, LLC, 2015 August, 2015 − Rev. 8 1 Publication Order Number: KAI−02050/D KAI−02050 ORDERING INFORMATION Standard Devices See full datasheet for ordering information associated with devices no longer recommended for new designs. Table 2. ORDERING INFORMATION − STANDARD DEVICES Part Number Description KAI−02050−AAA−JP−BA Monochrome, No Microlens, PGA Package, Taped Clear Cover Glass, No Coatings, Standard Grade. KAI−02050−AAA−JP−AE Monochrome, No Microlens, PGA Package, Taped Clear Cover Glass, No Coatings, Engineering Grade. KAI−02050−ABA−JD−BA Monochrome, Telecentric Microlens, PGA Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Standard Grade. KAI−02050−ABA−JD−AE Monochrome, Telecentric Microlens, PGA Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Engineering Grade. KAI−02050−ABA−JP−BA Monochrome, Telecentric Microlens, PGA Package, Taped Clear Cover Glass, No Coatings, Standard Grade. KAI−02050−ABA−JP−AE Monochrome, Telecentric Microlens, PGA Package, Taped Clear Cover Glass, No Coatings, Engineering Grade. KAI−02050−ABA−FD−BA Monochrome, Telecentric Microlens, CLCC Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Standard Grade. KAI−02050−ABA−FD−AE Monochrome, Telecentric Microlens, CLCC Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Engineering Grade. KAI−02050−FBA−JD−BA Gen2 Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Standard Grade. KAI−02050−FBA−JD−AE Gen2 Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Engineering Grade. KAI−02050−FBA−FD−BA Gen2 Color (Bayer RGB), Telecentric Microlens, CLCC Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Standard Grade. KAI−02050−FBA−FD−AE Gen2 Color (Bayer RGB), Telecentric Microlens, CLCC Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Engineering Grade. KAI−02050−FBA−JB−B2 Gen2 Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass (No Coatings), Grade 2. KAI−02050−FBA−JB−AE Gen2 Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass (No Coatings), Engineering Grade. KAI−02050−FBA−JB−B2−T Gen2 Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass (No Coatings), Grade 2, Packed in Trays. Marking Code KAI−02050−AAA Serial Number KAI−02050−ABA Serial Number KAI−02050−FBA Serial Number KAI−02050−FBA Serial Number VAB = xx.x See the ON Semiconductor Device Nomenclature document (TND310/D) for a full description of the naming convention used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at www.onsemi.com. www.onsemi.com 2 KAI−02050 Not Recommended for New Designs Table 3. ORDERING INFORMATION − NOT RECOMMENDED FOR NEW DESIGNS Part Number Description KAI−02050−CBA−JD−BA Gen1 Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Standard Grade. KAI−02050−CBA−JD−AE Gen1 Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Engineering Grade. KAI−02050−CBA−FD−BA Gen1 Color (Bayer RGB), Telecentric Microlens, CLCC Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Standard Grade. KAI−02050−CBA−FD−AE Gen1 Color (Bayer RGB), Telecentric Microlens, CLCC Package, Sealed Clear Cover Glass with AR Coating (Both Sides), Engineering Grade. KAI−02050−CBA−JB−B2 Gen1 Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass (No Coatings), Grade 2. KAI−02050−CBA−JB−AE Gen1 Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass (No Coatings), Engineering Grade. KAI−02050−CBA−JB−B2−T Gen1 Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass (No Coatings), Grade 2, Packed in Trays. www.onsemi.com 3 Marking Code KAI−02050−CBA Serial Number KAI−02050−CBA Serial Number VAB = xx.x KAI−02050 DEVICE DESCRIPTION Architecture H2Bd H2Sd H1Bd H1Sd SUB H2Bc H2Sc H1Bc H1Sc RDc Rc VDDc VOUTc RDd Rd VDDd VOUTd ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ 1 10 22 20 8 800 800 20 8 22 10 1 1 Dummy 12 20 GND OGc H2SLc GND OGd H2SLd V1T V2T V3T V4T V1T V2T V3T V4T DevID ESD V1B V2B V3B V4B RDa Ra VDDa VOUTa 1600 (H) x 1200 (V) 5.5 mm x 5.5 mm Pixels 22 20 20 22 V1B V2B V3B V4B BG G R ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ 20 Buffer 12 Dark 1 Dummy 1 10 22 20 8 (Last VCCD Phase = V1 → H1S) 800 800 H2Bb H2Sb H1Bb H1Sb SUB H2Ba H2Sa H1Ba H1Sa GND OGa H2SLa ESD 20 8 22 10 1 RDb Rb VDDb VOUTb GND OGb H2SLb Figure 2. Block Diagram Dark Reference Pixels These pixels are light sensitive but are not tested for defects and non-uniformities. There are 12 dark reference rows at the top and 12 dark rows at the bottom of the image sensor. The dark rows are not entirely dark and so should not be used for a dark reference level. Use the 22 dark columns on the left or right side of the image sensor as a dark reference. Under normal circumstances use only the center 20 columns of the 22 column dark reference due to potential light leakage. Image Acquisition An electronic representation of an image is formed when incident photons falling on the sensor plane create electron-hole pairs within the individual silicon photodiodes. These photoelectrons are collected locally by the formation of potential wells at each photosite. Below photodiode saturation, the number of photoelectrons collected at each pixel is linearly dependent upon light level and exposure time and non-linearly dependent on wavelength. When the photodiodes charge capacity is reached, excess electrons are discharged into the substrate to prevent blooming. Dummy Pixels Within each horizontal shift register there are 11 leading additional shift phases. These pixels are designated as dummy pixels and should not be used to determine a dark reference level. In addition, there is one dummy row of pixels at the top and bottom of the image. ESD Protection Adherence to the power-up and power-down sequence is critical. Failure to follow the proper power-up and power-down sequences may cause damage to the sensor. See Power-Up and Power-Down Sequence section. Active Buffer Pixels 20 unshielded pixels adjacent to any leading or trailing dark reference regions are classified as active buffer pixels. www.onsemi.com 4 KAI−02050 Physical Description PGA Pin Description and Device Orientation 67 65 63 61 59 57 55 53 51 49 47 V3T V1T VDDc GND Rc H2SLc H1Bc H2Sc N/C H2Sd H1Bd 68 66 64 62 60 58 56 54 52 50 48 ESD V4T V2T VOUTc RDc OGc H2Bc H1Sc SUB H1Sd H2Bd 45 H2SLd 43 41 39 37 35 Rd GND VDDd V1T V3T 46 44 42 40 38 36 OGd RDd VOUTd V2T V4T DevID Pixel (1, 1) 4 6 V4B V2B 8 VOUTa 10 12 14 16 18 20 22 24 26 28 30 32 34 RDa OGa H2Ba H1Sa SUB H1Sb H2Bb OGb RDb VOUTb V2B V4B ESD 23 25 27 29 31 33 H2SLb Rb GND VDDb V1B V3B 1 3 5 7 9 11 13 15 17 19 V3B V1B VDDa GND Ra H2SLa H1Ba H2Sa N/C H2Sb 21 H1Bb Figure 3. PGA Package Pin Designations − Top View Table 4. PGA PACKAGE PIN DESCRIPTION Pin Name 1 V3B Vertical CCD Clock, Phase 3, Bottom Description 3 V1B Vertical CCD Clock, Phase 1, Bottom 4 V4B Vertical CCD Clock, Phase 4, Bottom 5 VDDa Output Amplifier Supply, Quadrant a 6 V2B Vertical CCD Clock, Phase 2, Bottom 7 GND Ground 8 VOUTa 9 Ra Reset Gate, Quadrant a 10 RDa Reset Drain, Quadrant a 11 H2SLa Video Output, Quadrant a Horizontal CCD Clock, Phase 2, Storage, Last Phase, Quadrant a 12 OGa Output Gate, Quadrant a 13 H1Ba Horizontal CCD Clock, Phase 1, Barrier, Quadrant a 14 H2Ba Horizontal CCD Clock, Phase 2, Barrier, Quadrant a 15 H2Sa Horizontal CCD Clock, Phase 2, Storage, Quadrant a 16 H1Sa Horizontal CCD Clock, Phase 1, Storage, Quadrant a 17 N/C No Connect 18 SUB Substrate 19 H2Sb Horizontal CCD Clock, Phase 2, Storage, Quadrant b 20 H1Sb Horizontal CCD Clock, Phase 1, Storage, Quadrant b 21 H1Bb Horizontal CCD Clock, Phase 1, Barrier, Quadrant b 22 H2Bb Horizontal CCD Clock, Phase 2, Barrier, Quadrant b 23 H2SLb Horizontal CCD Clock, Phase 1, Storage, Last Phase, Quadrant b 24 OGb Output Gate, Quadrant b www.onsemi.com 5 KAI−02050 Table 4. PGA PACKAGE PIN DESCRIPTION (continued) Pin Name 25 Rb Reset Gate, Quadrant b Description 26 RDb Reset Drain, Quadrant b 27 GND Ground 28 VOUTb 29 VDDb Output Amplifier Supply, Quadrant b 30 V2B Vertical CCD Clock, Phase 2, Bottom 31 V1B Vertical CCD Clock, Phase 1, Bottom 32 V4B Vertical CCD Clock, Phase 4, Bottom 33 V3B Vertical CCD Clock, Phase 3, Bottom 34 ESD ESD Protection Disable 35 V3T Vertical CCD Clock, Phase 3, Top 36 DevID 37 V1T Vertical CCD Clock, Phase 1, Top 38 V4T Vertical CCD Clock, Phase 4, Top 39 VDDd Video Output, Quadrant b Device Identification Output Amplifier Supply, Quadrant d 40 V2T Vertical CCD Clock, Phase 2, Top 41 GND Ground 42 VOUTd 43 Rd Reset Gate, Quadrant d 44 RDd Reset Drain, Quadrant d 45 H2SLd Video Output, Quadrant d Horizontal CCD Clock, Phase 2, Storage, Last Phase, Quadrant d 46 OGd Output Gate, Quadrant d 47 H1Bd Horizontal CCD Clock, Phase 1, Barrier, Quadrant d 48 H2Bd Horizontal CCD Clock, Phase 2, Barrier, Quadrant d 49 H2Sd Horizontal CCD Clock, Phase 2, Storage, Quadrant d 50 H1Sd Horizontal CCD Clock, Phase 1, Storage, Quadrant d 51 N/C No Connect 52 SUB Substrate 53 H2Sc Horizontal CCD Clock, Phase 2, Storage, Quadrant c 54 H1Sc Horizontal CCD Clock, Phase 1, Storage, Quadrant c 55 H1Bc Horizontal CCD Clock, Phase 1, Barrier, Quadrant c 56 H2Bc Horizontal CCD Clock, Phase 2, Barrier, Quadrant c 57 H2SLc Horizontal CCD Clock, Phase 2, Storage, Last Phase, Quadrant c 58 OGc Output Gate, Quadrant c 59 Rc Reset Gate, Quadrant c 60 RDc Reset Drain, Quadrant c 61 GND Ground 62 VOUTc Video Output, Quadrant c 63 VDDc Output Amplifier Supply, Quadrant c 64 V2T Vertical CCD Clock, Phase 2, Top 65 V1T Vertical CCD Clock, Phase 1, Top 66 V4T Vertical CCD Clock, Phase 4, Top 67 V3T Vertical CCD Clock, Phase 3, Top 68 ESD EDS Protection Disable 1. Liked named pins are internally connected and should have a common drive signal. 2. N/C pins (17, 51) should be left floating. www.onsemi.com 6 KAI−02050 RDd Rd 38 37 36 35 34 OGd H1Bd H2SLd H1Sd H2Bd H2Sd 39 SUB 42 41 40 H2Sc H1Sc H1Bc H2SLc H2Bc OGc Rc Ceramic Leadless Chip Carrier Pin Description RDc 48 47 46 45 44 43 49 33 32 GND 50 31 VOUTd VOUTc 51 30 VDDd VDDc 52 29 V2T V2T 53 28 V1T V1T 54 27 V4T V4T 55 26 V3T GND V3T 56 25 DevID ESD 57 24 V3B V3B 58 23 V4B V4B 59 22 V1B V1B 60 21 V2B V2B 61 20 VDDb 62 19 VOUTb 63 18 GND 64 1 17 RDb 7 8 9 10 11 12 13 14 15 16 H2Ba H1Ba H1Sa H2Sa SUB H2Sb H1Sb Rb 6 OGb 5 H2Bb 4 H2SLb 3 H1Bb 2 OGa RDa GND H2SLa VOUTa Ra VDDa Pixel (1, 1) Figure 4. CLCC Package Pin Designations − Top View Table 5. CLCC PACKAGE PIN DESCRIPTION Pin Name 1 RDa Reset Drain, Quadrant a 2 Ra Reset Gate, Quadrant a 3 OGa Output Gate, Quadrant a 4 H2SLa Horizontal CCD Clock, Phase 2, Storage, Last Phase, Quadrant a 5 H2Ba Horizontal CCD Clock, Phase 2, Barrier, Quadrant a 6 H1Ba Horizontal CCD Clock, Phase 1, Barrier, Quadrant a 7 H1Sa Horizontal CCD Clock, Phase 1, Storage, Quadrant a 8 H2Sa Horizontal CCD Clock, Phase 2, Storage, Quadrant a 9 SUB Substrate 10 H2Sb Horizontal CCD Clock, Phase 2, Storage, Quadrant b 11 H1Sb Horizontal CCD Clock, Phase 1, Storage, Quadrant b 12 H1Bb Horizontal CCD Clock, Phase 1, Barrier, Quadrant b 13 H2Bb Horizontal CCD Clock, Phase 2, Barrier, Quadrant b 14 H2SLb Horizontal CCD Clock, Phase 2, Storage, Last Phase, Quadrant b 15 OGb Output Gate, Quadrant b 16 Rb Reset Gate, Quadrant b 17 RDb Reset Drain, Quadrant b 18 GND Ground 19 VOUTb Description Video Output, Quadrant b www.onsemi.com 7 KAI−02050 Table 5. CLCC PACKAGE PIN DESCRIPTION (continued) Pin Name Description 20 VDDb Output Amplifier Supply, Quadrant b 21 V2B Vertical CCD Clock, Phase 2, Bottom 22 V1B Vertical CCD Clock, Phase 1, Bottom 23 V4B Vertical CCD Clock, Phase 4, Bottom 24 V3B Vertical CCD Clock, Phase 3, Bottom 25 DevID 26 V3T Vertical CCD Clock, Phase 3, Top 27 V4T Vertical CCD Clock, Phase 4, Top 28 V1T Vertical CCD Clock, Phase 1, Top 29 V2T Vertical CCD Clock, Phase 2, Top Device Identification 30 VDDd 31 VOUTd Output Amplifier Supply, Quadrant d 32 GND Ground 33 RDd Reset Drain, Quadrant d 34 Rd Reset Gate, Quadrant d 35 OGd Output Gate, Quadrant d 36 H2SLd Horizontal CCD Clock, Phase 2, Storage, Last Phase, Quadrant d 37 H2Bd Horizontal CCD Clock, Phase 2, Barrier, Quadrant d 38 H1Bd Horizontal CCD Clock, Phase 1, Barrier, Quadrant d 39 H1Sd Horizontal CCD Clock, Phase 1, Storage, Quadrant d 40 H2Sd Horizontal CCD Clock, Phase 2, Storage, Quadrant d 41 SUB Substrate 42 H2Sc Horizontal CCD Clock, Phase 2, Storage, Quadrant c 43 H1Sc Horizontal CCD Clock, Phase 1, Storage, Quadrant c 44 H1Bc Horizontal CCD Clock, Phase 1, Barrier, Quadrant c 45 H2Bc Horizontal CCD Clock, Phase 2, Barrier, Quadrant c 46 H2SLc Horizontal CCD Clock, Phase 2, Storage, Last Phase, Quadrant c 47 OGc Output Gate, Quadrant c 48 Rc Reset Gate, Quadrant c 49 RDc Reset Drain, Quadrant c 50 GND Ground 51 VOUTc Video Output, Quadrant c 52 VDDc Output Amplifier Supply, Quadrant c 53 V2T Vertical CCD Clock, Phase 2, Top 54 V1T Vertical CCD Clock, Phase 1, Top 55 V4T Vertical CCD Clock, Phase 4, Top 56 V3T Vertical CCD Clock, Phase 3, Top 57 ESD ESD Protection Disable 58 V3B Vertical CCD Clock, Phase 3, Bottom 59 V4B Vertical CCD Clock, Phase 4, Bottom 60 V1B Vertical CCD Clock, Phase 1, Bottom 61 V2B Vertical CCD Clock, Phase 2, Bottom 62 VDDa Output Amplifier Supply, Quadrant a 63 VOUTa Video Output, Quadrant a 64 GND Video Output, Quadrant d Ground 1. Liked named pins are internally connected and should have a common drive signal. www.onsemi.com 8 KAI−02050 IMAGING PERFORMANCE Typical Operational Conditions Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions. Table 6. TYPICAL OPERATIONAL CONDITIONS Description Condition Notes Light Source Continuous Red, Green and Blue LED Illumination. Operation Nominal Operating Voltages and Timing. For monochrome sensor, only green LED used. Specifications Table 7. PERFORMANCE SPECIFICATIONS Description Temperature Tested at (5C) Symbol Min. Nom. Max. Unit Sampling Plan DSNU − − 2.0 mVpp Die 27, 40 − 2.0 5.0 % rms Die 27, 40 − 5.0 15.0 % pp Die 27, 40 − 1.0 2.0 % rms Die 27, 40 ALL CONFIGURATIONS Dark Field Global Non-Uniformity Bright Field Global Non-Uniformity (Note 1) Bright Field Global Peak to Peak Non-Uniformity (Note 1) PRNU Bright Field Center Non-Uniformity (Note 1) Maximum Photoresponse Non-Linearity (Note 2) NL − 2 − % Design Maximum Gain Difference between Outputs (Note 2) DG − 10 − % Design Maximum Signal Error due to Non-Linearity Differences (Note 2) DNL − 1 − % Design Horizontal CCD Charge Capacity HNe − 55 − ke− Design − ke− Design ke− Die Vertical CCD Charge Capacity Photodiode Charge Capacity (Note 3) VNe − 45 PNe − 20 − HCTTE 0.999995 0.999999 − Die VCTE 0.999995 0.999999 − Die IPD − 7 70 e/p/s Vertical CCD Dark Current IVD − 100 300 Image Lag Lag − − 10 Anti-Blooming Factor XAB 300 − − Vertical Smear Smr − −100 − Horizontal CCD Charge Transfer Efficiency Vertical CCD Charge Transfer Efficiency Photodiode Dark Current Read Noise (Note 4) ne−T − 12 − Dynamic Range (Notes 4, 5) DR − 64 − Output Amplifier DC Offset VODC − 9.4 Output Amplifier Bandwidth (Note 6) f−3db − 250 Output Amplifier Impedance ROUT − Output Amplifier Sensitivity DV/DN − 9 Die 40 e/p/s Die 40 e− Design Design dB e− rms Design Design dB Design − V Die − MHz Die 127 − W Die 34 − mV/e− Design www.onsemi.com 27, 40 27, 40 27, 40 KAI−02050 Table 7. PERFORMANCE SPECIFICATIONS (continued) Description Symbol Min. Nom. Max. Unit Sampling Plan QEMAX − 44 − % Design lQE − 480 − nm Design % Design nm Design % Design nm Design % Design nm Design % Design nm Design Temperature Tested at (5C) KAI−02050−ABA CONFIGURATION Peak Quantum Efficiency Peak Quantum Efficiency Wavelength KAI−02050−FBA GEN2 COLOR CONFIGURATION WITH MAR GLASS Peak Quantum Efficiency Blue Green Red Peak Quantum Efficiency Wavelength Blue Green Red QEMAX lQE − − − 38 37 31 − − − − − − 460 530 605 − − − KAI−02050−CBA GEN1 COLOR CONFIGURATION WITH MAR GLASS (Note 7) Peak Quantum Efficiency Blue Green Red Peak Quantum Efficiency Wavelength Blue Green Red QEMAX lQE − − − 39 37 29 − − − − − − 470 540 620 − − − KAI−02050−FBA GEN2 COLOR CONFIGURATION WITH CLEAR GLASS Peak Quantum Efficiency Blue Green Red Peak Quantum Efficiency Wavelength Blue Green Red QEMAX lQE − − − 35 34 29 − − − − − − 460 530 605 − − − KAI−02050−CBA GEN1 COLOR CONFIGURATION WITH CLEAR GLASS (Note 7) Peak Quantum Efficiency Blue Green Red Peak Quantum Efficiency Wavelength Blue Green Red QEMAX lQE − − − 36 34 27 − − − − − − 470 540 620 − − − 1. Per color. 2. Value is over the range of 10% to 90% of photodiode saturation. 3. The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value of VAB is set such that the photodiode charge capacity is 680 mV. 4. At 40 MHz. 5. Uses 20LOG (PNe / ne−T). 6. Assumes 5 pF load. 7. This color filter set configuration (Gen1) is not recommended for new designs. www.onsemi.com 10 KAI−02050 TYPICAL PERFORMANCE CURVES Quantum Efficiency Monochrome with Microlens NOTE: The PGA and CLCC versions have different quantum efficiencies due to differences in the cover glass transmission. See Figure 32: Cover Glass Transmission for more details. Figure 5. Monochrome with Microlens Quantum Efficiency Monochrome without Microlens Figure 6. Monochrome without Microlens Quantum Efficiency www.onsemi.com 11 KAI−02050 Color (Bayer RGB) with Microlens and MAR Cover Glass (Gen2 and Gen1 CFA) Figure 7. MAR Glass Color (Bayer) with Microlens Quantum Efficiency Color (Bayer RGB) with Microlens and Clear Cover Glass (Gen2 and Gen1 CFA) Figure 8. Clear Glass Color (Bayer) with Microlens Quantum Efficiency www.onsemi.com 12 KAI−02050 Angular Quantum Efficiency For the curves marked “Horizontal”, the incident light angle is varied in a plane parallel to the HCCD. For the curves marked “Vertical”, the incident light angle is varied in a plane parallel to the VCCD. Monochrome with Microlens 100 Relative Quantum Efficiency (%) 90 Vertical 80 70 60 50 Horizontal 40 30 20 10 0 −30 −20 −10 0 10 20 30 Angle (degrees) Figure 9. Monochrome with Microlens Angular Quantum Efficiency Dark Current vs. Temperature 10000 Dark Current (e/s) 1000 VCCD 100 10 Photodiode 1 0.1 1000/T (K) 2.9 3.0 3.1 3.2 3.3 3.4 T (°C) 72 60 50 40 30 21 Figure 10. Dark Current vs. Temperature www.onsemi.com 13 KAI−02050 Power-Estimated 1.0 0.9 0.8 Power (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 15 20 25 30 35 40 35 40 HCCD Frequency (MHz) Single Dual Quad Figure 11. Power Frame Rates 80 70 Frame Rate (fps) 60 50 40 30 20 10 0 10 15 20 25 30 HCCD Frequency (MHz) Single Dual (Left/Right) Figure 12. Frame Rates www.onsemi.com 14 Quad KAI−02050 DEFECT DEFINITIONS Table 8. OPERATION CONDITIONS FOR DEFECT TESTING AT 405C Description Operational Mode Condition Notes Two Outputs, Using VOUTa and VOUTc, Continuous Readout HCCD Clock Frequency 10 MHz Pixels per Line 1840 1 Lines per Frame 720 2 Line Time 186.9 ms Frame Time 134.6 ms Photodiode Integration Time Mode A: PD_Tint = Frame Time = 134.6 ms, No Electronic Shutter Used Mode B: PD_Tint = 33 ms, Electronic Shutter Used VCCD Integration Time 118.1 ms 3 Temperature 40°C Light Source Continuous Red, Green and Blue LED Illumination Operation 1. 2. 3. 4. 4 Nominal Operating Voltages and Timing Horizontal overclocking used. Vertical overclocking used. VCCD Integration Time = 632 lines × Line Time, which is the total time a pixel will spend in the VCCD registers. For monochrome sensor, only the green LED is used. Table 9. DEFECT DEFINITIONS FOR TESTING AT 405C Description Definition Standard Grade Grade 2 Notes Major Dark Field Defective Bright Pixel PD_Tint = Mode A → Defect ≥ 47 mV or PD_Tint = Mode B → Defect ≥ 12 mV 20 20 1 Major Bright Field Defective Dark Pixel Defect ≥ 12% 20 20 1 Minor Dark Field Defective Bright Pixel PD_Tint = Mode A → Defect ≥ 24 mV or PD_Tint = Mode B → Defect ≥ 6 mV 200 200 Cluster Defect (Standard Grade) A group of 2 to 10 contiguous major defective pixels, but no more than 2 adjacent defects horizontally. 8 N/A 2 Cluster Defect (Grade 2) A group of 2 to 10 contiguous major defective pixels. N/A 8 2 Column Defect A group of more than 10 contiguous major defective pixels along a single column. 0 0 2 1. For the color device (KAI−02050−FBA or KAI−02050−CBA), a bright field defective pixel deviates by 12% with respect to pixels of the same color. 2. Column and cluster defects are separated by no less than two (2) good pixels in any direction (excluding single pixel defects). www.onsemi.com 15 KAI−02050 Table 10. OPERATION CONDITIONS FOR DEFECT TESTING AT 275C Description Operational Mode Condition Notes Two Outputs, Using VOUTa and VOUTc, Continuous Readout HCCD Clock Frequency 20 MHz Pixels per Line 1840 1 Lines per Frame 720 2 Line Time 93.8 ms Frame Time 67.5 ms Photodiode Integration Time (PD_Tint) Mode A: PD_Tint = Frame Time = 67.5 ms, No Electronic Shutter Used Mode B: PD_Tint = 33 ms, Electronic Shutter Used VCCD Integration Time 59.3 ms 3 Temperature 27°C Light Source Continuous Red, Green and Blue LED Illumination Operation 1. 2. 3. 4. 4 Nominal Operating Voltages and Timing Horizontal overclocking used. Vertical overclocking used. VCCD Integration Time = 632 lines × Line Time, which is the total time a pixel will spend in the VCCD registers. For monochrome sensor, only the green LED is used. Table 11. DEFECT DEFINITIONS FOR TESTING AT 405C Description Definition Standard Grade Grade 2 Notes Major Dark Field Defective Bright Pixel PD_Tint = Mode A → Defect ≥ 8 mV or PD_Tint = Mode B → Defect ≥ 4 mV 20 20 1 Major Bright Field Defective Dark Pixel Defect ≥ 12% 20 20 1 Cluster Defect (Standard Grade) A group of 2 to 10 contiguous major defective pixels, but no more than 2 adjacent defects horizontally. 8 N/A 2 Cluster Defect (Grade 2) A group of 2 to 10 contiguous major defective pixels. N/A 8 2 Column Defect A group of more than 10 contiguous major defective pixels along a single column. 0 0 2 1. For the color device (KAI−02050−FBA or KAI−02050−CBA), a bright field defective pixel deviates by 12% with respect to pixels of the same color. 2. Column and cluster defects are separated by no less than two (2) good pixels in any direction (excluding single pixel defects). Defect Map The defect map supplied with each sensor is based upon testing at an ambient (27°C) temperature. Minor point defects are not included in the defect map. All defective pixels are reference to pixel 1, 1 in the defect maps. See Figure 13: Regions of Interest for the location of pixel 1, 1. www.onsemi.com 16 KAI−02050 TEST DEFINITIONS Test Regions of Interest Overclocking Image Area ROI: Active Area ROI: Center ROI: The test system timing is configured such that the sensor is overclocked in both the vertical and horizontal directions. See Figure 13 for a pictorial representation of the regions of interest. Pixel (1, 1) to Pixel (1640, 1240) Pixel (21, 21) to Pixel (1620, 1220) Pixel (771, 571) to Pixel (870, 670) Only the Active Area ROI pixels are used for performance and defect tests. VOUTc 12 Dark Rows Horizontal Overclock 1, 1 22 Dark Columns 1600 x 1200 Active Pixels 20 Buffer Columns Pixel 20 Buffer Columns Pixel 21, 21 22 Dark Columns 20 Buffer Rows 20 Buffer Rows 12 Dark Rows VOUTa Figure 13. Regions of Interest Tests voltage has been set such that the charge capacity of the sensor is 680 mV. Global non-uniformity is defined as Dark Field Global Non-Uniformity This test is performed under dark field conditions. The sensor is partitioned into 192 sub regions of interest, each of which is 100 by 100 pixels in size. See Figure 14: Test Sub Regions of Interest. The average signal level of each of the 192 sub regions of interest is calculated. The signal level of each of the sub regions of interest is calculated using the following formula: Global Non−Uniformity + 100 @ ǒ Active Area Standard Deviation Active Area Signal Ǔ Units : % rms Active Area Signal = Active Area Average − Dark Column Average Global Peak to Peak Non-Uniformity This test is performed with the imager illuminated to a level such that the output is at 70% of saturation (approximately 476 mV). Prior to this test being performed the substrate voltage has been set such that the charge capacity of the sensor is 680 mV. The sensor is partitioned into 192 sub regions of interest, each of which is 100 by 100 pixels in size. See Figure 14: Test Sub Regions of Interest. The average signal level of each of the 192 sub regions of interest (ROI) is calculated. The signal level of each of the sub regions of interest is calculated using the following formula: Signal of ROI[i] + (ROI Average in Counts * * Horizontal Overclock Average in Counts) @ @ mV per Count Units : mVpp (millivolts Peak to Peak) Where i = 1 to 192. During this calculation on the 192 sub regions of interest, the maximum and minimum signal levels are found. The dark field global uniformity is then calculated as the maximum signal found minus the minimum signal level found. Signal of ROI[i] + (ROI Average in Counts * Global Non-Uniformity This test is performed with the imager illuminated to a level such that the output is at 70% of saturation (approximately 476 mV). Prior to this test being performed the substrate * Horizontal Overclock Average in Counts) @ @ mV per Count www.onsemi.com 17 KAI−02050 Where i = 1 to 192. During this calculation on the 192 sub regions of interest, the maximum and minimum signal levels are found. The global peak to peak uniformity is then calculated as: Global Uniformity + 100 @ ǒ Bright Field Defect Test This test is performed with the imager illuminated to a level such that the output is at approximately 476 mV. Prior to this test being performed the substrate voltage has been set such that the charge capacity of the sensor is 680 mV. The average signal level of all active pixels is found. The bright and dark thresholds are set as: Ǔ Max. Signal * Min. Signal Active Area Signal Units : % pp Dark Defect Threshold = Active Area Signal @ Threshold Center Non-Uniformity This test is performed with the imager illuminated to a level such that the output is at 70% of saturation (approximately 476 mV). Prior to this test being performed the substrate voltage has been set such that the charge capacity of the sensor is 680 mV. Defects are excluded for the calculation of this test. This test is performed on the center 100 by 100 pixels of the sensor. Center uniformity is defined as: Center ROI Uniformity + 100 @ ǒ Center ROI Standard Deviation Center ROI Signal Bright Defect Threshold = Active Area Signal @ Threshold The sensor is then partitioned into 192 sub regions of interest, each of which is 100 by 100 pixels in size. In each region of interest, the average value of all pixels is found. For each region of interest, a pixel is marked defective if it is greater than or equal to the median value of that region of interest plus the bright threshold specified or if it is less than or equal to the median value of that region of interest minus the dark threshold specified. Example for major bright field defective pixels: • Average value of all active pixels is found to be 476 mV. • Dark defect threshold: 476 mV ⋅ 12 % = 57 mV. • Bright defect threshold: 476 mV ⋅ 12 % = 57 mV. • Region of interest #1 selected. This region of interest is pixels 21, 21 to pixels 120, 120. ♦ Median of this region of interest is found to be 470 mV. ♦ Any pixel in this region of interest that is ≥ (470 + 57 mV) 527 mV in intensity will be marked defective. ♦ Any pixel in this region of interest that is ≤ (470 − 57 mV) 413 mV in intensity will be marked defective. • All remaining 192 sub regions of interest are analyzed for defective pixels in the same manner. Ǔ Units : % rms Center ROI Signal = Center ROI Average − Dark Colum Average Dark Field Defect Test This test is performed under dark field conditions. The sensor is partitioned into 192 sub regions of interest, each of which is 100 by 100 pixels in size. In each region of interest, the median value of all pixels is found. For each region of interest, a pixel is marked defective if it is greater than or equal to the median value of that region of interest plus the defect threshold specified in the “Defect Definitions” section. www.onsemi.com 18 KAI−02050 Test Sub Regions of Interest Pixel (1620,1220) Pixel (21,21) 177 178 179 180 181 182 183 184 185 186 187 188 189 190 191 192 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VOUTa Figure 14. Test Sub Regions of Interest www.onsemi.com 19 KAI−02050 OPERATION Absolute Maximum Ratings description. If the level or the condition is exceeded, the device will be degraded and may be damaged. Operation at these values will reduce MTTF. Absolute maximum rating is defined as a level or condition that should not be exceeded at any time per the Table 12. ABSOLUTE MAXIMUM RATINGS Description Symbol Minimum Maximum Unit Notes Operating Temperature TOP −50 70 °C 1 Humidity RH 5 90 % 2 Output Bias Current IOUT − 60 mA 3 CL − 10 pF Off-Chip Load Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Noise performance will degrade at higher temperatures. 2. T = 25°C. Excessive humidity will degrade MTTF. 3. Total for all outputs. Maximum current is −15 mA for each output. Avoid shorting output pins to ground or any low impedance source during operation. Amplifier bandwidth increases at higher current and lower load capacitance at the expense of reduced gain (sensitivity). Table 13. ABSOLUTE MAXIMUM VOLTAGE RATINGS BETWEEN PINS AND GROUND Description Minimum Maximum Unit Notes VDDa, VOUTa −0.4 17.5 V 1 RDa −0.4 15.5 V 1 V1B, V1T ESD − 0.4 ESD + 24.0 V V2B, V2T, V3B, V3T, V4B, V4T ESD − 0.4 ESD + 14.0 V H1Sa, H1Ba, H2Sa, H2Ba, H2SLa, Ra, OGa ESD − 0.4 ESD + 14.0 V ESD −10.0 0.0 V SUB −0.4 40.0 V 1. a denotes a, b, c or d. 2. Refer to Application Note Using Interline CCD Image Sensors in High Intensity Visible Lighting Conditions www.onsemi.com 20 1 2 KAI−02050 Power-Up and Power-Down Sequence Adherence to the power-up and power-down sequence is critical. Failure to follow the proper power-up and power-down sequences may cause damage to the sensor. Do Not Pulse the Electronic Shutter until ESD is Stable V+ VDD SUB Time ESD V− VCCD Low HCCD Low Activate All Other Biases when ESD is Stable and Sub is above 3 V Notes: 1. Activate all other biases when ESD is stable and SUB is above 3 V. 2. Do not pulse the electronic shutter until ESD is stable. 3. VDD cannot be +15 V when SUB is 0 V. 4. The image sensor can be protected from an accidental improper ESD voltage by current limiting the SUB current to less than 10 mA. SUB and VDD must always be greater than GND. ESD must always be less than GND. Placing diodes between SUB, VDD, ESD and ground will protect the sensor from accidental overshoots of SUB, VDD and ESD during power on and power off. See the figure below. Figure 15. Power-Up and Power-Down Sequence The VCCD clock waveform must not have a negative overshoot more than 0.4 V below the ESD voltage. 0.0 V ESD ESD − 0.4 V All VCCD Clock Absolute Maximum Overshoot of 0.4 V Figure 16. VCCD Clock Waveform Example of external diode protection for SUB, VDD and ESD.a denotes a, b, c or d. VDDa SUB GND ESD Figure 17. Example of External Diode Protection www.onsemi.com 21 KAI−02050 DC Bias Operating Conditions Table 14. DC BIAS OPERATING CONDITIONS Pins Symbol Min. Nom. Max. Unit Max. DC Current Notes Reset Drain RDa RD 11.8 12.0 12.2 V 10 mA 1 Output Gate OGa OG −2.2 −2.0 −1.8 V 10 mA 1 Output Amplifier Supply VDDa VDD 14.5 15.0 15.5 V 11.0 mA 1, 2 Ground GND GND 0.0 0.0 0.0 V −1.0 mA Substrate SUB VSUB 5.0 VAB VDD V 50 mA 3, 8 ESD Protection Disable ESD ESD −9.5 −9.0 Vx_L V 50 mA 6, 7, 9 VOUTa IOUT −3.0 −7.0 −10.0 mA − 1, 4, 5 Description Output Bias Current VDDa RDa Ra 1. a denotes a, b, c or d. 2. The maximum DC current is for one output. IDD = IOUT + ISS. See Figure 18. 3. The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value of VAB is set such that the photodiode charge capacity is the nominal PNe (see Specifications). 4. An output load sink must be applied to each VOUT pin to activate each output amplifier. 5. Nominal value required for 40 MHz operation per output. May be reduced for slower data rates and lower noise. 6. Adherence to the power-up and power-down sequence is critical. See Power Up and Power Down Sequence section. 7. ESD maximum value must be less than or equal to V1_L + 0.4 V and V2_L + 0.4 V. 8. Refer to Application Note Using Interline CCD Image Sensors in High Intensity Visible Lighting Conditions. 9. Where Vx_L is the level set for V1_L, V2_L, V3_L, or V4_L in the application. IDD HCCD Floating Diffusion IOUT VOUTa OGa ISS Source Follower #1 Figure 18. Output Amplifier www.onsemi.com 22 Source Follower #2 Source Follower #3 KAI−02050 AC Operating Conditions Table 15. CLOCK LEVELS Description Pins (Note 1) Symbol Level Min. Nom. Max. Unit Vertical CCD Clock, Phase 1 V1B, V1T V1_L Low −8.2 −8.0 −7.8 V V1_M Mid −0.2 0.0 0.2 11 nF (Note 6) V1_H High 11.5 12.0 12.5 V2_L Low −8.2 −8.0 −7.8 V V2_H High −0.2 0.0 0.2 11 nF (Note 6) V3_L Low −8.2 −8.0 −7.8 V V3_H High −0.2 0.0 0.2 11 nF (Note 6) V4_L Low −8.2 −8.0 −7.8 V V4_H High −0.2 0.0 0.2 11 nF (Note 6) H1S_L Low −5.2 (Note 7) −4.0 −3.8 V 140 pF (Note 6) H1S_A Amplitude 3.8 4.0 5.2 (Note 7) H1B_L Low −5.2 (Note 7) −4.0 −3.8 V 93 pF (Note 6) H1B_A Amplitude 3.8 4.0 5.2 (Note 7) H2S_L Low −5.2 (Note 7) −4.0 −3.8 V 140 pF (Note 6) H2S_A Amplitude 3.8 4.0 5.2 (Note 7) H2B_L Low −5.2 (Note 7) −4.0 −3.8 V 93 pF (Note 6) H2B_A Amplitude 3.8 4.0 5.2 (Note 7) H2SL_L Low −5.2 −5.0 −4.8 V H2SL_A Amplitude 4.8 5.0 5.2 20 pF (Note 6) R_L (Note 4) Low −3.5 −2.0 −1.5 V 16 pF (Note 6) R_H High 2.5 3.0 4.0 VES High 29.0 30.0 40.0 V 700 pF (Note 6) Vertical CCD Clock, Phase 2 Vertical CCD Clock, Phase 3 Vertical CCD Clock, Phase 4 Horizontal CCD Clock, Phase 1 Storage Horizontal CCD Clock, Phase 1 Barrier Horizontal CCD Clock, Phase 2 Storage Horizontal CCD Clock, Phase 2 Barrier Horizontal CCD Clock, Phase 2 Last Phase (Note 3) Reset Gate Electronic Shutter (Note 5) 1. 2. 3. 4. 5. 6. 7. V2B, V2T V3B, V3T V4B, V4T H1Sa H1Ba H2Sa H2Ba H2SLa Ra SUB Capacitance (Note 2) a denotes a, b, c or d. Capacitance is total for all like named pins. Use separate clock driver for improved speed performance. Reset low should be set to –3 V for signal levels greater than 40,000 electrons. Refer to Application Note Using Interline CCD Image Sensors in High Intensity Visible Lighting Conditions. Capacitance values are estimated. If the minimum horizontal clock low level is used (–5.2 V), then the maximum horizontal clock amplitude should be used (5.2 V amplitude) to create a –5.2 V to 0.0 V clock. If a 5 V clock driver is used, the horizontal low level should be set to –5.0 V and the high level should be a set to 0.0 V. www.onsemi.com 23 KAI−02050 The figure below shows the DC bias (VSUB) and AC clock (VES) applied to the SUB pin. Both the DC bias and AC clock are referenced to ground. VES VSUB GND GND Figure 19. DC Bias and AC Clock Applied to the SUB Pin Device Identification The device identification pin (DevID) may be used to determine which 5.5 micron pixel interline CCD sensor is being used. Table 16. Description Device Identification Pins Symbol Min. Nom. Max. Unit Max. DC Current Notes DevID DevID 86,000 108,000 130,000 W 50 mA 1, 2, 3 1. Nominal value subject to verification and/or change during release of preliminary specifications. 2. If the Device Identification is not used, it may be left disconnected. 3. After Device Identification resistance has been read during camera initialization, it is recommended that the circuit be disabled to prevent localized heating of the sensor due to current flow through the R_DeviceID resistor. Recommended Circuit Note that V1 must be a different value than V2. V1 V2 R_external DevID ADC R_DeviceID GND KAI−02050 Figure 20. Device Identification Recommended Circuit www.onsemi.com 24 KAI−02050 TIMING Table 17. REQUIREMENTS AND CHARACTERISTICS (Note 1) Symbol Min. Nom. Max. Unit Photodiode Transfer tPD 1.0 − − ms VCCD Leading Pedestal t3P 4.0 − − ms VCCD Trailing Pedestal t3D 4.0 − − ms VCCD Transfer Delay tD 1.0 − − ms VCCD Transfer tV 1.0 − − ms VVCR 75 − 100 % tVR, tVF 5 − 10 % tHS 0.2 − − ms HCCD Transfer te 25.0 − − ns Shutter Transfer tSUB 1.0 − − ms Shutter Delay tHD 1.0 − − ms Reset Pulse tR 2.5 − − ns Reset − Video Delay tRV − 2.2 − ns H2SL − Video Delay tHV − 3.1 − ns tLINE 23.0 − − ms Dual HCCD Readout 44.1 − − ms Single HCCD Readout 14.6 − − ms Quad HCCD Readout 29.1 − − ms Dual HCCD Readout 55.7 − − ms Single HCCD Readout Description VCCD Clock Cross-Over VCCD Rise, Fall Times HCCD Delay Line Time Frame Time tFRAME 1. Refer to timing diagrams as shown in Figure 21, Figure 22, Figure 23, Figure 24 and Figure 25. 2. Refer to Figure 25: VCCD Clock Edge Alignment. 3. Relative to the pulse width. www.onsemi.com 25 Notes 2, 3 KAI−02050 Timing Diagrams The timing sequence for the clocked device pins may be represented as one of seven patterns (P1−P7) as shown in the table below. The patterns are defined in Figure 21 and Figure 22. Contact ON Semiconductor Application Engineering for other readout modes. Table 18. TIMING DIAGRAMS Device Pin Quad Readout Dual Readout VOUTa, VOUTb Dual Readout VOUTa, VOUTc Single Readout VOUTa V1T P1T P1B P1T P1B V2T P2T P4B P2T P4B V3T P3T P3B P3T P3B V4T P4T P2B P4T P2B V1B P1B V2B P2B V3B P3B V4B P4B H1Sa P5 H1Ba P5 H2Sa (Note 2) P6 H2Ba P6 Ra P7 H1Sb P5 P5 H1Bb P5 P6 H2Sb (Note 2) P6 P6 H2Bb P6 P5 Rb P7 P7 (Note 1) or Off (Note 3) P7 (Note 1) or Off (Note 3) H1Sc P5 P5 (Note 1) or Off (Note 3) P5 P5 (Note 1) or Off (Note 3) H1Bc P5 P5 (Note 1) or Off (Note 3) P5 P5 (Note 1) or Off (Note 3) H2Sc (Note 2) P6 P6 (Note 1) or Off (Note 3) P6 P6 (Note 1) or Off (Note 3) H2Bc P6 P6 (Note 1) or Off (Note 3) P6 P6 (Note 1) or Off (Note 3) Rc P7 P7 (Note 1) or Off (Note 3) P7 P7 (Note 1) or Off (Note 3) H1Sd P5 P5 (Note 1) or Off (Note 3) P5 P5 (Note 1) or Off (Note 3) H1Bd P5 P5 (Note 1) or Off (Note 3) P6 P5 (Note 1) or Off (Note 3) H2Sd (Note 2) P6 P6 (Note 1) or Off (Note 3) P6 P6 (Note 1) or Off (Note 3) H2Bd P6 P6 (Note 1) or Off (Note 3) P5 P6 (Note 1) or Off (Note 3) Rd P7 P7 (Note 1) or Off (Note 3) P7 (Note 1) or Off (Note 3) P7 (Note 1) or Off (Note 3) #Lines/Frame (Minimum) 632 1264 632 1264 #Pixels/Line (Minimum) 853 1706 1. For optimal performance of the sensor. May be clocked at a lower frequency. If clocked at a lower frequency, the frequency selected should be a multiple of the frequency used on the a and b register. 2. H2SLx follows the same pattern as H2Sx For optimal speed performance, use a separate clock driver. 3. Off = +5 V. Note that there may be operating conditions (high temperature and/or very bright light sources) that will cause blooming from the unused c/d register into the image area. www.onsemi.com 26 KAI−02050 Photodiode Transfer Timing A row of charge is transferred to the HCCD on the falling edge of V1 as indicated in the P1 pattern below. Using this timing sequence, the leading dummy row or line is combined with the first dark row in the HCCD. The “Last Line” is dependent on readout mode – either 632 or 1264 minimum counts required. It is important to note that, in Pattern 1 td 2 t 3p 3 4 t pd t 3d 5 6 general, the rising edge of a vertical clock (patterns P1−P4) should be coincident or slightly leading a falling edge at the same time interval. This is particularly true at the point where P1 returns from the high (3rd level) state to the mid-state when P4 transitions from the low state to the high state. td tv tv P1T t v /2 t v /2 P2T t v /2 t v /2 P3T P4T tv tv P1B t v /2 t v /2 P2B P3B P4B t hs P5 Last Line t hs L1 + Dummy Line L2 P6 P7 Figure 21. Photodiode Transfer Timing P6 pattern). The number of pixels in a row is dependent on readout mode – either 853 or 1706 minimum counts required. Line and Pixel Timing Each row of charge is transferred to the output, as illustrated below, on the falling edge of H2SL (indicated as Pattern tline tv P1T tv P1B ths t e/2 P5 te P6 tr P7 VOUT Pixel 1 Pixel 34 Pixel n Figure 22. Line and Pixel Timing www.onsemi.com 27 KAI−02050 Pixel Timing Detail P5 P6 P7 VOUT trv thv Figure 23. Pixel Timing Detail Frame/Electronic Shutter Timing The SUB pin may be optionally clocked to provide electronic shuttering capability as shown below. The resulting photodiode integration time is defined from the falling edge of SUB to the falling edge of V1 (P1 pattern). Pattern t frame P1T/B SUB P6 t hd t int t sub t hd Figure 24. Frame/Electronic Shutter Timing VCCD Clock Edge Alignment VVCR tV 90% 10% tVR tVF tV tVF tVR Figure 25. VCCD Clock Edge Alignment www.onsemi.com 28 KAI−02050 Figure 26. Line and Pixel Timing − Vertical Binning by 2 www.onsemi.com 29 VOUT P7 P6 P5 P4B P3B P2B P1B P4T P3T P2T P1T tv tv tv t hs t hs Pixel 1 Pixel 34 Pixel n Line and Pixel Timing − Vertical Binning by 2 KAI−02050 STORAGE AND HANDLING Table 19. STORAGE CONDITIONS Description Symbol Minimum Maximum Unit Notes Storage Temperature TST −55 80 °C 1 Humidity RH 5 90 % 2 1. Long-term storage toward the maximum temperature will accelerate color filter degradation. 2. T = 25°C. Excessive humidity will degrade MTTF. For information on ESD and cover glass care and cleanliness, please download the Image Sensor Handling and Best Practices Application Note (AN52561/D) from www.onsemi.com. For quality and reliability information, please download the Quality & Reliability Handbook (HBD851/D) from www.onsemi.com. For information on device numbering and ordering codes, please download the Device Nomenclature technical note (TND310/D) from www.onsemi.com. For information on environmental exposure, please download the Using Interline CCD Image Sensors in High Intensity Lighting Conditions Application Note (AND9183/D) from www.onsemi.com. For information on Standard terms and Conditions of Sale, please download Terms and Conditions from www.onsemi.com. For information on soldering recommendations, please download the Soldering and Mounting Techniques Reference Manual (SOLDERRM/D) from www.onsemi.com. www.onsemi.com 30 KAI−02050 MECHANICAL INFORMATION PGA Completed Assembly Notes: 1. See Ordering Information for marking code. 2. No materials to interfere with clearance through guide holes. 3. The center of the active image is nominally at the center of the package. 4. Die rotation < 0.5 degrees. 5. Glass rotation < 1.5 degrees with respect to package outer edges for all sealed configurations. 6. Internal traces may be exposed on sides of package. Do not allow metal to contact sides of ceramic package. 7. Recommended mounting screws:1.6 × 0.35 mm (ISO Standard); 0–80 (Unified Fine Thread Standard). 8. Units: millimeters. Figure 27. PGA Completed Assembly www.onsemi.com 31 KAI−02050 CLCC Completed Assembly Notes: 1. See Ordering Information for marking code. 2. Die rotation < 0.5 degrees. 3. Units: millimeters. Figure 28. CLCC Completed Assembly www.onsemi.com 32 KAI−02050 PGA MAR Cover Glass Notes: 1. Dust/Scratch Count – 12 micron maximum 2. Units: IN [MM] 3. Reflectance Specification a. 420 nm to 435 nm < 2.0% b. 435 nm to 630 nm < 0.8% c. 630 nm to 680 nm < 2.0% Figure 29. PGA MAR Cover Glass www.onsemi.com 33 KAI−02050 CLCC MAR Cover Glass Notes: 1. Dust/Scratch Count – 12 micron maximum 2. Units: millimeter 3. Reflectance Specification a. 420 nm to 435 nm < 2.0% b. 435 nm to 630 nm < 0.8% c. 630 nm to 680 nm < 2.0% Figure 30. CLCC MAR Cover Glass www.onsemi.com 34 KAI−02050 PGA Clear Cover Glass Notes: 1. Dust/Scratch Count – 12 micron maximum 2. Units: IN Figure 31. PGA Clear Cover Glass Cover Glass Transmission 100 90 80 Transmission (%) 70 60 50 40 30 PGA MAR 20 CLCC MAR PGA Clear 10 0 200 300 400 500 600 700 800 900 Wavelength (nm) NOTE: PGA and CLCC MAR transmission data differ due to in-spec differences from glass vendor. Figure 32. Cover Glass Transmission www.onsemi.com 35 KAI−02050 SHIPPING CONFIGURATION Cover Glass Protective Tape Cover glass protective tape, as shown in Figure 33, is utilized to help ensure the cleanliness of the cover glass during transportation and camera manufacturing. This protective tape is not intended to be optically correct, and should be removed prior to any image testing. The protective tape should be removed in an ionized air stream to prevent static build-up and the attraction of particles. The following part numbers will have the protective tape applied: Table 20. Part Number Description KAI−02050−CBA−JB−B2 Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass (No Coatings), Grade 2 KAI−02050−CBA−JB−AE Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass (No Coatings), Engineering Grade KAI−02050−CBA−JB−B2−T Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass (No Coatings), Grade 2, Packed in Trays Table 21. Criteria Placement Tab Location Scratches Description Per the drawing. The lid tape shall not overhang the edge of the package or mounting holes. The lid tape always overhangs the top of the glass (chamfers not included). The tape tab is located near pin 68. The tape application equipment will make slight scratches on the lid tape. This is allowed. Figure 33. Cover Glass Protective Tape www.onsemi.com 36 KAI−02050 Tray Packing 192 image sensors per brick. The minimum order and multiple quantities for this configuration are 192 image sensors. The following part numbers are packed in bricks of 6 trays, each tray containing 32 image sensors, for a total of Table 22. Part Number KAI−02050−CBA−JB−B2−T Description Color (Bayer RGB), Telecentric Microlens, PGA Package, Sealed Clear Cover Glass (No Coatings), Grade 2, Packed in Trays Tray Configuration Pin-Up View Tray Position 1 Pin 1 Tray Location Marking Tray Position 32 Figure 34. Tray Pin-Up View Pin-Down View Pin 1 Tray Position 1 Tray Location Marking Tray Position 32 Figure 35. Tray Pin-Down View www.onsemi.com 37 KAI−02050 sensors in the brick. The ID label is applied to the top of the brick. Tray 1 is at the bottom of the brick and the empty tray is at the top of the brick. Brick Configuration Bricks consist of 6 full trays and 1 empty tray. Each tray contains 32 image sensors. There are a total of 192 image Strapping (2 Places) Tray Sheet Covers Brick ID Label Figure 36. Brick The Brick ID is Encoded in the Bar Code. Brick ID Figure 37. Brick ID Label Brick in Vacuum Sealed Bag Brick Label (Figure 42) Figure 38. Sealed Brick www.onsemi.com 38 KAI−02050 Shipping Container Brick Loaded in Shipping Container Figure 39. Brick Loaded in Shipping Container Open Shipping Container with Parts List The parts list (see Figure 43) details information for each sensor in the brick. The parts list includes the serial number, tray and location, and VAB value for each sensor. Figure 40. Open Shipping Container with Parts List Sealed Shipping Container The Brick Label (see Figure 42) is applied to both ends of the shipping container. Figure 41. Sealed Shipping Container www.onsemi.com 39 KAI−02050 Brick Label Figure 42. Brick Label Parts List The parts list details information for each sensor in the brick. The parts list includes the serial number, tray and location, and VAB value for each sensor. Additionally, the VAB value and serial number are encoded in the bar code. Serial Number VAB Position in Tray Tray Figure 43. Parts List www.onsemi.com 40 KAI−02050 ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 41 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative KAI−02050/D