KSA1010OTU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. KSA1010 KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 100 Units V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage -7 V IC Collector Current (DC) -7 A ICP *Collector Current (Pulse) - 15 A IB Base Current - 3.5 A PC Collector Dissipation (TC=25°C) 40 W Collector Dissipation (Ta=25°C) 1.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤300µs, Duty Cycle≤10% ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = - 5A, IB1 = - 0.5A, L = 1mH Min. - 100 VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = - 5A, IB1 = - IB2 = - 0.5A VBE(off) = 5V, L = 180µH Clamped - 100 V VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = - 10A, IB1 = - 1A IB2 = 0.5A, VBE(off) = 5V L = 180µH, Clamped - 100 V ICBO Collector Cut-off Current VCB = - 100V, IE = 0 ICER Collector Cut-off Current VCE = - 100V, RBE = 51Ω TC = 125°C ICEX1 Collector Cut-off Current VCE = - 100V, VBE(off) = 1.5V - 10 µA ICEX2 Collector Cut-off Current VCE = - 100V, VBE(off) = 1.5V TC = 125°C -1 mA IEBO Emitter Cut-off Current VEB = - 5V, IC= 0 - 10 uA hFE1 hFE2 hFE3 * DC Current Gain VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A VCE = - 5V, IC = - 5A 40 40 20 Max. Units V - 10 µA -1 mA 200 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 0.6 VBE(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 1.5 V V tON Turn On Time 0.5 µs tSTG Storage Time 1.5 µs tF Fall Time VCC = - 50V, IC = - 5A, IB1 = - IB2 = - 0.5A RL = 10Ω 0.5 µs Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classification Classification R O Y hFE2 40 ~ 80 60 ~ 120 100 ~ 200 ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 KSA1010 Electrical Characteristics TC=25°C unless otherwise noted KSA1010 Typical Characteristics -5 IB = -100mA IB = 0m -8 A 1000 IB = -7 IB = -60mA 0m A IB = -50mA -4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = -90mA IB = -40mA -3 IB = -30mA IB = -20mA -2 IB = -10mA -1 -0 -0 -1 -2 -3 -4 VCE = -5.0V 100 10 1 -0.01 -5 -0.1 V CE[V], COLLECTOR-EMITTER VOLTAGE -10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -100 Lim ite d -1 s 0m 10 -0.01 -0.01 pa tio n s m 10 VCE(sat) Dis s s 1m -0.1 -10 s 0u 30 -1 IC Max. (Pulsed) us s 50 0u 10 VBE(sat) d ite m Li IC[A], COLLECTOR CURRENT IC = 10 IB b S/ VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE -1 -0.1 -0.01 -0.1 -1 -10 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 160 50 PC[W], POWER DISSIPATION 140 dT(%), IC DERATING 120 100 80 DI 60 SS IP AT I 40 S/b O N LI M LIM IT E 20 ITE D D 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 5. Derating Curve of Safe Operating Areas ©2001 Fairchild Semiconductor Corporation 40 30 20 10 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, August 2001 SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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