KSA1013OTA

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Base Ordering Information Part Number Top Mark Package A1013 TO-92 3L Packing Method KSA1013YBU KSA1013OBU KSA1013YTA Bulk Ammo KSA1013OTA Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCBO Collector-Base Voltage Parameter -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1 A IB Base Current -0.5 A TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C © 2002 Fairchild Semiconductor Corporation KSA1013 Rev. 1.1.1 www.fairchildsemi.com KSA1013 — PNP Epitaxial Silicon Transistor October 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 900 mW Derate Above TA = 25°C 7.2 mW/°C Thermal Resistance, Junction-to-Ambient 139 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit ICBO Collector Cut-Off Current VCB = -150 V, IE = 0 -1 μA IEBO Emitter Cut-Off Current VEB = -6 V, IC = 0 -1 μA Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 BVCEO -160 DC Current Gain VCE = -5 V, IC = -200 mA VCE(sat) Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mA VBE(on) Base-Emitter On Voltage VCE =- 5 V, IC = -5 mA Current Gain Bandwidth Product VCE = -5 V, IC = -200 mA Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz hFE fT Cob V 60 320 -1.5 V -0.45 -0.75 V 15 50 MHz 35 pF hFE Classification Classification R O Y hFE 60 ~ 120 100 ~ 200 160 ~ 320 © 2002 Fairchild Semiconductor Corporation KSA1013 Rev. 1.1.1 www.fairchildsemi.com 2 KSA1013 — PNP Epitaxial Silicon Transistor Thermal Characteristics(1) -1.0 EMITTER COMMON o Ta=25 C IB = -12mA IB = -10mA -0.8 -0.7 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1000 EMITTER COMMON o IB = -15mA Ta=25 C -0.9 IB = -8mA -0.6 -0.5 IB = -6mA -0.4 IB = -4.5mA -0.3 IB = -3mA -0.2 IB = -2mA -0.1 IB = -1mA 100 VCE = -10V VCE = -5V 10 1 -10 -0.0 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 VCE = -2V -20 -100 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC Current Gain -10 1000 VCE(sat)[V], SATURATION VOLTAGE EMITTER COMMON -----VCE=-10V - - -VCE= -5V hFE, DC CURRENT GAIN -1000 100 10 -10 EMITTER COMMON o Ta=25 C -1 IC/IB=10 -0.1 IC/IB=5 -0.01 -100 -1000 -1 -10 IC[mA], COLLECTOR CURRENT -100 -1000 IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage 100 -1.0 -0.8 Cob[pF], CAPACITANCE IC[A], COLLECTOR CURRENT EMITTER COMMON VCE=-5V -0.6 -0.4 10 -0.2 -0.0 -0.0 1 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -10 VBE(sat)[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Base-Emitter On Voltage © 2002 Fairchild Semiconductor Corporation KSA1013 Rev. 1.1.1 -100 Figure 6. Collector Output Capacitance www.fairchildsemi.com 3 KSA1013 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics EMITTER COMMON o Ta=25 C 100 VCE=-5V VCE=-2V 10 -1 IC M AX .=1 .0A -0.1 DC (T a =2 o 5C ) VCEO MAX 1 s 1m IC[A], COLLECTOR CURRENT IC MAX. (PULSE) s s m 10 00m 1 fT[MHz], CURRENT GAIN-BANDWITH PRODUCT -10 1000 -0.01 -1E-3 -1 -10 -1 -100 IC[mA], COLLECTOR CURRENT -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 8. Safe Operating Area Figure7. Current Gain Bandwidth Product © 2002 Fairchild Semiconductor Corporation KSA1013 Rev. 1.1.1 -10 www.fairchildsemi.com 4 KSA1013 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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