KSA1015
PNP Epitaxial Silicon Transistor
Features
• Low-Frequency Amplifier
• Collector-Base Voltage: VCBO = -50 V
• Complement to KSC1815
TO-92
12
3
Straight Lead
Bulk Packing
1
2
1. Emitter
2. Collector
3. Base
3
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
Marking
Package
Packing Method
KSA1015GRTA
A1015
TO-92 3L
Ammo
KSA1015YTA
A1015
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VCBO
Collector-Base Voltage
Parameter
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-150
mA
IB
Base Current
-50
mA
TJ
Junction Temperature
150
°C
-55 to 150
°C
TSTG
Storage Temperature Range
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.9
www.fairchildsemi.com
1
KSA1015 — PNP Epitaxial Silicon Transistor
September 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Unit
Total Device Dissipation
400
mW
Derate Above 25°C
3.2
mW/°C
Thermal Resistance, Junction to Ambient
312
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ. Max.
Unit
BVCBO
Collector-Base Breakdown Voltage
IC = -100 μA, IE = 0
-50
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = -10 mA, IB = 0
-50
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
-5
V
Collector Cut-Off Current
VCB = -50 V, IE = 0
ICBO
IEBO
Emitter Cut-Off Current
VEB = -5 V, IC = 0
hFE1
DC Current Gain
VCE = -6 V, IC = -2 mA
70
hFE2
DC Current Gain
VCE = -6 V, IC = -150 mA
25
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -100 mA, IB = -10 mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = -100 mA, IB = -10 mA
fT
Current Gain Bandwidth Product
VCE = -10 V, IC = -1 mA
Cob
Output Capacitance
VCB = -10 V, IE = 0,
f = 1 MHz
NF
Noise Figure
VCE = -6 V, IC = -0.1 mA,
f = 100 Hz, RG = 10 kΩ
-0.1
μA
-0.1
μA
400
-0.1
-0.3
V
-1.1
V
80
MHz
4
7
pF
0.5
6
dB
hFE Classification
Classification
O
Y
GR
hFE1
70 ~ 140
120 ~ 240
200 ~ 400
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.9
www.fairchildsemi.com
2
KSA1015 — PNP Epitaxial Silicon Transistor
Thermal Characteristics(1)
1000
-50
VCE = -6V
IB = -400μA
IB = -350μA
-40
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-45
IB = -300μA
-35
IB = -250μA
-30
IB = -200μA
-25
-20
IB = -150μA
-15
IB = -100μA
-10
100
10
IB = -50μA
-5
1
-0.1
0
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-1
-100
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-100
-10
IC=10IB
-1
VCE=-6V
IC[mA], COLLECTOR CURRENT
VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE
-10
VBE(sat)
VCE(sat)
-0.1
-0.01
-0.1
-1
-10
-10
-1
-0.1
-0.0
-100
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE(sat)[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
VCE=-6V
10
hFE, DC CURRENT GAIN
Cob[pF], CAPACITANCE
f=1MHz
IE=0
1
-1
-10
10
-100
-1
-10
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.9
100
Figure 6. Current Gain Bandwidth Product
www.fairchildsemi.com
3
KSA1015 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
KSA1015 — PNP Epitaxial Silicon Transistor
Physical Dimensions
Figure 7. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.9
www.fairchildsemi.com
4
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I77
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
