KSA1142YSTU

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSA1142 KSA1142 Audio Frequency Power Amplifier High Freqency Power Amplifier • Complement to KSC2682 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PC PC TJ TSTG Ratings - 180 Units V - 180 V -5 V - 100 mA Collector Dissipation (Ta=25°C) 1.2 W Collector Dissipation (TC=25°C) 8 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = - 180V, IE = 0 Min. Typ. IEBO Emitter Cut-off Current VEB = - 3V, IC = 0 hFE1 hFE2 * DC Current Gain VCE = - 5V, IC = - 1mA VCE = - 5V, IC = - 10mA VCE(sat) * Collector-Emitter Saturation Voltage VBE(sat) fT 90 100 200 200 320 IC = - 50mA, IB = - 5mA - 0.16 - 0.5 * Base-Emitter Saturation Voltage IC = - 50mA, IB = - 5mA - 0.8 - 1.5 Current Gain Bandwidth Product VCE = - 10V, IC = - 20mA 180 4.5 Cob Output Capacitance VCB = - 10V, IE = 0, f=1MHz NF Noise Figure VCE = - 10V, IC = - 1mA RS = 10kΩ, f = 1MHz Max. -1 Units µA -1 µA V V MHz 7 4 pF dB * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification O Y hFE2 100 ~ 200 160 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1142 Typical Characteristics -160 1000 VCE = -5V Pulse Test -120 hFE, DC CURRENT GAIN Ic[mA], COLLECTOR CURRENT Pulse Test -140 IB = -500㎂ IB = -450㎂ I = -400㎂ B -100 IB = -350㎂ 0㎂ IB = -30 ㎂ 0 -25 = IB -80 -60 IB = -200㎂ IB = -150㎂ IB = -100㎂ -40 -20 100 10 IB = -50㎂ IB = 0 0 0 -20 -40 -60 -80 -100 -120 -140 1 -0.1 -160 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE 100 -10 IC = 10 IB Pulse Test Cob(PF)Cib(PF),CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC current Gain V BE(sat) -0.1 VCE(sat) f=1.0MHz IE=0(COB) IE=0(CIB) Cib 10 Cob 1 -0.01 0.1 1 10 -1 100 -10 -100 -1000 VCB(v), COLLECTOR-BASE VOLTAGE VCB(v), EMITTER-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance -1000 1000 d b S/ mite Li -10 VCEO MAX. 10 10ms -1 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2000 Fairchild Semiconductor International ms =1 PW 100 IC (DC) Max. -100 s) 0m (5 C D n tio pa si is ited m Li IC[mA], COLLECTOR CURRENT VCE = -10V D fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT -100 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic -1 -10 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, February 2000 KSA1142 Typical Characteristics (Continued) 160 10 PC[W], POWER DISSIPATION 140 dT(%),IcDERATING 120 100 S/b 80 Di ss 60 40 ip a Lim ited tio n Li m ite d 20 0 8 6 4 2 0 0 50 100 150 200 o TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International 0 50 100 150 200 250 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, February 2000 3.45 3.05 8.30 7.70 4.00 3.80 14.20 MAX 3.20 11.20 10.80 1.95 1.55 1.35 1.70 1.50 D 0.85 0.65 3X #1 2.29 FRONT VIEW NOTES: A. B. C. 0.60 0.45 3X 0.254 M SIDE VIEW TOP VIEW 3° 1.00 E PRODUCTION CODE TSSTU TSTU NONE (STD LENGTH) TERMINAL LENGTH "D" 3.45 - 4.05 2.36 - 2.96 TERMINAL LENGTH "E" 6.45-7.45 5.36-6.36 12.76 - 13.36 15.76-16.76 NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE ALL DIMENSIONS ARE IN MILLIMETERS DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS D FOR TERMINAL LENGTH "D", REFER TO TABLE E F. FOR TERMINAL LENGTH "E", REFER TO TABLE DRAWING FILENAME: MKT-TO126AArev2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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