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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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KSA1156
KSA1156
High Voltage Switching
Low Power Switching Regulator
DC-DC Converter
• High Breakdown Voltage
• Low Collector Saturation Voltage
• High Speed Switching
TO-126
1
1. Emitter
2.Collector
3.Base
PNP Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
- 400
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
- 400
V
-7
IB
V
Base Current
- 0.25
A
IC
Collector Current (DC)
- 0.5
A
ICP
Collector Current (Pulse)
-1
A
PC
Collector Dissipation (Ta=25°C)
1
W
PC
Collector Dissipation (TC=25°C)
10
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
Test Condition
IC = - 100mA, IB = - 10mA
L = - 20mH
Min.
- 400
VCEX(sus)
Collector-Emitter Sustaining Voltage
IC = - 200mA, IB1 = - IB2 = - 20mA
VBE(off)= 5V, L = 10mH
- 400
Max.
Units
V
V
ICBO
Collector Cut-off Current
VCB = - 400V, IE = 0
- 100
µA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
- 10
µA
ICEX1
Collector Cut-off Current
VCE = - 400V, VBE(off) = 1.5V
- 100
µA
ICEX2
Collector Cut-off Current
VCE = - 400V, VBE(off) = 1.5V
TC= 125°C
-1
mA
hFE
DC Current Gain
VCE = - 5V, IC = - 100mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = - 100mA, IB = - 10mA
-1
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = - 100mA, IB = - 10mA
- 1.2
V
tON
Turn On Time
µs
Storage Time
4
µs
tF
Fall Time
VCC = - 150V, IC = - 100mA
IB1= - 10mA , IB2 = 20mA
RL = 1.5KΩ
1
tSTG
1
µs
30
200
hFE Classification
Classification
N
R
O
Y
hFE
30 ~ 60
40 ~ 80
60 ~ 120
100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA1156
Typical Characteristics
-0.5
1000
VCE = -5V
Pulse Test
IB = -180mA
-0.4
IB = -160mA
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB = -200mA
IB = -140mA
-0.3
IB = -120mA
IB = -100mA
-0.2
IB = -80mA
IB = -60mA
IB = -40mA
-0.1
100
10
IB = -20mA
-0.0
-0
-2
-4
-6
-8
1
-0.1
-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10
-100
-1000
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-10
10
DI
s
S
D
LIM SIPA C
ITE TIO
N
D
-0.1
㎲
0㎲
M
IT
VCE(sat)
10
LI
-0.1
1m
ED
-0.01
-1E-3
-0.01
-0.1
-1
-10
-100
-1
-1000
-10
-100
VCEOMAX.
V BE(sat)
-1
IC MAX. (Pulse)
-1
b
IC[A], COLLECTOR CURRENT
IC = 10 IB
S/
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-1
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Safe Operating Area
-250
160
120
dT(%),IcDERATING
IC(mA), COLLECTOR CURRENT
140
-200
-150
-100
100
S/b
80
Di
ss
60
40
-50
ip
a
Lim
ited
tio
n
Li
m
ite
d
20
-0
0
-0
-100
-200
-300
-400
-500
VCE (v), COLLECTOR EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area
©2000 Fairchild Semiconductor International
0
50
100
150
200
o
TC[ C], CASE TEMPERATURE
Figure 6. Derating Curve of Safe Operating Areas
Rev. A, February 2000
KSA1156
Typical characteristics (Continued)
16
PC[W], POWER DISSIPATION
14
12
10
8
6
4
2
0
0
50
100
150
200
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
3.45
3.05
8.30
7.70
4.00
3.80
14.20 MAX
3.20
11.20
10.80
1.95
1.55
1.35
1.70
1.50
D
0.85
0.65 3X
#1
2.29
FRONT VIEW
NOTES:
A.
B.
C.
0.60
0.45 3X
0.254 M
SIDE VIEW
TOP VIEW
3°
1.00
E
PRODUCTION
CODE
TSSTU
TSTU
NONE
(STD LENGTH)
TERMINAL
LENGTH "D"
3.45 - 4.05
2.36 - 2.96
TERMINAL
LENGTH "E"
6.45-7.45
5.36-6.36
12.76 - 13.36
15.76-16.76
NO INDUSTRY STANDARD APPLIES TO THIS
PACKAGE
ALL DIMENSIONS ARE IN MILLIMETERS
DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS
D
FOR TERMINAL LENGTH "D", REFER TO TABLE
E
F.
FOR TERMINAL LENGTH "E", REFER TO TABLE
DRAWING FILENAME: MKT-TO126AArev2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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