KSA1175OBU

KSA1175 KSA1175 Low Frequency Amplifier • Collector-Base Voltage : VCBO= -60V • Complement to KSC2785 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -60 Units V VCEO VEBO Collector-Emitter Voltage -50 V Emitter-Base Voltage -5 IC V Collector Current -150 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -60 BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -50 BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 ICBO Collector Cut-off Current VCB= -60V, IE=0 IEBO Emitter Cut-off Current VEB= -5V, IC=0 hFE DC Current Gain VCE= -6V, IC= -1mA Typ. Max. Units V V V 40 -0.1 µA -0.1 µA 700 VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.18 -0.3 V VBE (on) Base-Emitter On Voltage VCE= -6V, IE= -1mA -0.50 -0.62 -0.80 V 50 180 fT Current Gain Bandwidth Product VCE= -6V, IC= -10mA Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 2.8 NF Noise Figure VCE= -6V, IC= -0.3mA f=100Hz, RS=10KΩ 6.0 MHz pF 20 dB hFE Classification Classification R O Y G L hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1175 Typical Characteristics 1000 -50 VCE = -6V IB = -400µ A IB = -350µ A -40 IB = -300µ A -35 IB = -250µ A -30 IB = -200µ A -25 -20 IB = -150µ A -15 IB = -100µ A -10 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 100 10 IB = -50µ A -5 1 -0.1 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -1 Figure 2. DC current Gain -100 -10 IC=10IB VCE =-6V IC[mA], COLLECTOR CURRENT VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic -0.1 -100 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -1 -10 VBE(sat) VCE(sat) -0.01 -0.1 -1 -10 -10 -1 -0.1 -0.0 -100 IC[mA], COLLECTOR CURRENT -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE (sat)[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1000 VCE=-6V 10 hFE, DC CURRENT GAIN Cob[pF], CAPACITANCE f=1MHz IE =0 1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, September 2002 KSA1175 Package Dimensions TO-92S 4.00 ±0.20 (1.10) 3.70 ±0.20 2.31 ±0.20 14.47 ±0.30 0.66 MAX. 0.49 ±0.10 1.27TYP [1.27±0.20] 1.27TYP [1.27±0.20] +0.10 0.35 –0.05 2.86 ±0.20 0.77 ±0.10 3.72 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1