KSA1201OTF

KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Ratings Units VCBO Collector Base Voltage Parameter -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA IB Base Current -160 mA PC P C* Collector Power Dissipation 500 1,000 mW mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics T Symbol a= 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -120 V BVEBO Emitter-Base Breakdown Voltage IE = -1mA, IC = 0 -5 V ICBO Collector Cut-off Current VCB = -120V, IE = 0 -100 nA IEBO Emitter Cut-off Current VBE = -5V, IC = 0 -100 nA hFE DC Current Gain VCE = -5V, IC = -100mA VCE (sat) Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA VBE (on) Base-Emitter On Voltage VCE = -5V, IC = -500mA fT Current Gain Bandwidth Product VCE = -5V, IC = -100mA Cob Output Capacitance VCB = -10V, IE = 0, f = 1MHz ©2005 Fairchild Semiconductor Corporation KSA1201 Rev. B2 1 80 240 -1.0 -1.0 120 V V MHz 30 pF www.fairchildsemi.com KSA1201 PNP Epitaxial Silicon Transistor July 2005 Classification O Y hFE 80 ~ 160 120 ~ 240 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 1201 KSA1201 SOT-89 13” -- 4,000 KSA1201 Rev. B2 2 www.fairchildsemi.com KSA1201 PNP Epitaxial Silicon Transistor hFE Classification Figure 1. Static Characteristic IB =-10mA 1000 IB =-7mA IB =-5mA -0.6 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -0.8 Figure 2. DC Current Gain IB =-4mA -0.4 IB =-3mA IB =-2mA -0.2 IB =-1mA IB =0 -0 -4 -8 100 10 -12 -16 VCE = -5V -1 -10 Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1.6 IC = 10 IB 1.4 PC[W], POWER DISSIPATION VCE(sat)[V], SATURATION VOLTAGE -1 -0.1 -1 -10 -100 1.2 M 1.0 Bo ar d (2 50 m m 0.2 25 50 75 100 2 X0 . 8m m ) 125 150 PC[W], POWER DISSIPATION s 1m s 0m 10 s m 10 175 200 175 200 1.4 VCEOMAX -100 1.2 M 1.0 ou n te d 0.8 on 0.6 Ce ra m ic 0.4 Bo ar d (2 50 0.2 0 -1000 25 50 75 100 m m 2 X0 . 8m 125 m ) 150 o Ta[ C], AMBIENT TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE KSA1201 Rev. B2 ic 1.6 ICMAX(DC) -10 ra m o ICMAX(Pulse) -1 Ce Ta[ C], AMBIENT TEMPERATURE o -1 -0.1 on 0.4 0 Ta=25 C Single Pulse -10 d Figure 6. Power Derating -10000 -100 te 0.6 -1000 Figure 5. Safe Operating Area -1000 ou n 0.8 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -0.01 -100 3 www.fairchildsemi.com KSA1201 PNP Epitaxial Silicon Transistor Typical Performance Characteristics KSA1201 PNP Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters KSA1201 Rev. B2 4 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 KSA1201 Rev. B2 www.fairchildsemi.com KSA1201 PNP Epitaxial Silicon Transistor TRADEMARKS