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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
KSA1220/1220A
KSA1220/1220A
Audio Frequency Power Amplifier
High Frequency Power Amplifier
• Complement to KSC2690/KSC2690A
TO-126
1
1. Emitter
2.Collector
3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
IC
TC=25°C unless otherwise noted
Parameter
: KSA1220
: KSA1220A
Ratings
- 120
- 160
Units
V
V
- 120
- 160
V
V
Emitter-Base Voltage
-5
V
Collector Current (DC)
- 1.2
A
ICP
*Collector Current (Pulse)
- 2.5
A
IB
Base Current
- 0.3
A
PC
Collector Dissipation (Ta=25°C)
1.2
W
: KSA1220
: KSA1220A
PC
Collector Dissipation (TC=25°C)
20
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB = - 120V, IE = 0
Min.
Typ.
Max.
-1
Units
µA
35
60
150
140
-1
µA
320
IEBO
Emitter Cut-off Current
VEB = - 3V, IC = 0
hFE1
hFE2
* DC Current Gain
VCE = - 5V, IC = - 5mA
VCE = - 5V, IC = - 0.3A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 1A, IB = - 0.2A
- 0.4
- 0.7
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = - 1A, IB = - 0.2A
-1
- 1.3
V
fT
Current Gain Bandwidth Product
VCE = - 5V, IC = - 0.2A
175
MHz
Cob
Output Capacitance
VCB = - 10, IE = 0
f = 1MHz
26
pF
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
hFE Classification
Classification
R
O
Y
hFE2
60 ~ 120
100 ~ 200
160 ~ 320
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSA1220/1220A
Typical Characteristics
-0.8
-9
m
A
-8
m
A
=
=
IB = -6mA
IB
IB
1000
IB = -7mA
VCE = -5V
Pulse Test
IB = -5mA
IB =
IB = -4mA
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-10
mA
-1.0
-0.6
IB = -3mA
-0.4
IB = -2mA
IB = -1mA
-0.2
100
10
IB = 0A
-0.0
-0
-10
-20
-30
-40
-50
1
-1E-3
-60
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1
1000
-10
f=1.0MHz
IE=0
IC = 5 IB
Pulse Test
-1
V BE(sat)
-0.1
VCE(sat)
-0.01
-1E-3
-10
Figure 2. DC current Gain
Cob(PF), CAPACITANCE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-0.1
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
100
10
1
-0.01
-0.1
-1
-10
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
1000
-10
VCE = -5V
Pulse Test
=1
㎲
00
s
Limited
1m
Dissipation
D
C
s)
0m
=5
W ed
( P im it
L
b
S/
10
IC MAX. (DC)
-1
PW
100
s
IC[A], COLLECTOR CURRENT
IC MAX. (Pulse)
m
10
fTMHz), CURRENT GAIN BANDWIDTH PRODUCT
-0.01
-0.1
KSA1220
KSA1220A
-0.01
1
-0.01
-0.1
-1
IC[A], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
-1
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A1, June 2001
KSA1220/1220A
Typical Characteristics (Continued)
20
160
18
PC[W], POWER DISSIPATION
140
dT(%),IcDERATING
120
100
S/b
80
Di
ss
60
40
ip
a
Lim
ited
tio
n
Li
m
ite
d
16
14
12
10
8
6
4
20
2
0
0
50
100
150
200
o
Tc[ C], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Areas
©2001 Fairchild Semiconductor Corporation
0
0
50
100
150
200
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. A1, June 2001
KSA1220/1220A
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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