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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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KSA1281
PNP Epitaxial Silicon
Transistor
Features
• Audio Power Amplifier
• 3 W Output Application
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ABSOLUTE MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted.)
Symbol
Value
Unit
Collector−Base Voltage
VCBO
−50
V
Collector−Emitter Voltage
VCEO
−50
V
Emitter−Base Voltage
VEBO
−5
V
Collector Current
IC
−2
A
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
−55 to
+150
°C
Parameter
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
T
1
2
3
TO−92L
CASE 135AM
PIN CONNECTIONS
1. Emitter 2. Collector 3. Base
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2001
October, 2018 − Rev. 4
1
Publication Order Number:
KSA1281/D
KSA1281
THERMAL CHARACTERISTICS (Note 1)
Symbol
PD
Parameter
Value
Power Dissipation TC = 25°C
RqJA
Unit
1000
mW
Derate Above TA = 25°C
8.0
mW/°C
Thermal Resistance, Junction−to−Ambient
125
°C/W
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
ELECTRICAL CHARACTERISTICS (Note 2) Values are at TA = 25°C unless otherwise noted.
Symbol
Conditions
Min
BVCBO
Collector−Base Breakdown Voltage
Parameter
IC = −1 mA, IE = 0
−50
Typ
V
BVCEO
Collector−Emitter Breakdown Voltage
IC = −10 mA, IB = 0
−50
V
BVEBO
Emitter−Base Breakdown Voltage
IE = −1 mA, IC = 0
−5
V
ICBO
Collector Cut−Off Current
VCB = −50 V, IE = 0
IEBO
Emitter Cut−Off Current
hFE1
DC Current Gain
VEB = −5 V, IC = 0
hFE2
VCE = −2 V, IC = −500 mA
120
VCE = −2 V, IC = −1.5 A
40
Max
Unit
−100
nA
−100
nA
240
VBE(sat)
Base−Emitter Saturation Voltage
IC = −1 A, IB = −0.05 A
−1.2
V
VCE(sat)
Collector−Emitter Saturation Voltage
IC = −1 A, IB = −0.05 A
−0.5
V
Cob
fT
Output Capacitance
Current Gain Bandwidth Product
VCB = −10 V, IE = 0, f = 1 MHz
40
pF
VCE = −2 V, IC = −500 mA
100
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2.0%.
ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
KSA1281YTA
A1281 Y−
TO−92 3L
Ammo
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2
KSA1281
VBE(sat), V CE(sat)[V], SATURATION VOLTAGE
Typical Performance Characteristics
−1400
IC [mA], COLLECTOR CURRENT
IB = −7mA
−1200
IB = −6mA
−1000
IB = −5mA
−800
IB = −4mA
−600
IB = −3mA
−400
IB = −2mA
−200
IB = −1mA
0
0
−2
−4
−6
−8
−10
−12
−14
−16
1
IC = 50IB
o
Ta = 25 C
0.1
0.01
0.001
VCE[V], COLLECTOR−EMITTER VOLTAGE
Figure 2. Base−Emitter Saturation Voltage
1
−1400
VCE = −2V
−1200
IC [mA], COLLECTOR CURRENT
VCE (sat)[V], SATURATION VOLTAGE
10
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
IC = 50IB
o
Ta = 25 C
0.1
0.01
0.001
1
0.1
0.01
−1000
−800
−600
−400
−200
0
10
0
−0.2
IC[mA], COLLECTOR CURRENT
−0.6
−0.8
−1.0
−1.2
−1.4
Figure 4. Base−Emitter On Voltage
−10
1.4
IC(MAX)PLUS
1.2
PC [W], POWER DISSIPATION
IC(MAX)
1ms
−1
1s
o
Ta=25 C
D.C.
OPERATION
−0.1
VCEOMAX
−0.01
−0.4
VBE[V], BASE−EMITTER VOLTAGE
Figure 3. Collector−Emitter Saturation Voltage
I C [A], COLLECTOR CURRENT
1
0.1
0.01
−0.1
−1
−10
1.0
0.8
0.6
0.4
0.2
0
−100
VCE[V], COLLECTOR−EMITTER VOLTAGE
0
25
50
75
100
125
o
150
Ta[ C], AMBIENT TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
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3
175
KSA1281
PACKAGE DIMENSIONS
TO−92 3 8.0x4.9 (LEADFORMED)
CASE 135AM
ISSUE A
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4
KSA1281
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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KSA1281/D