KSA1406CSTU

KSA1406 KSA1406 CRT Display, Video Output • High Current Gain Bandwidth Product : fT = 400MHz (Typ.) • High Collector-Base Breakdown Voltage : VCBO = -200V • Low Reverse Transfer Capacitance : Cre=1.7pF (Typ.) TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Ratings - 200 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage - 200 -4 V V IC Collector Current (DC) - 100 mA ICP Collector Current (Pulse) - 200 mA PC Collector Dissipation (Ta=25°C) 1.2 W PC Collector Dissipation (TC=25°C) 7 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = - 10µA, IB = 0 Min. - 200 BVCEO Collector-Emitter Breakdown Voltage IC = - 1mA, RBE =∞ - 200 BVEBO Emitter-Base Breakdown Voltage IE = - 100µA, IC = 0 -4 ICBO Collector Cut-off Current VCB = - 150V, IC = 0 IEBO Emitter Cut-off Current VBE = - 2V, IE = 0 hFE1 hFE2 DC Current Gain VCE = - 10V, IC = - 10mA VCE = - 10V, IC = - 60mA Typ. Max. Units V V V - 0.1 µA - 0.1 µA 40 20 120 VCE(Sat) Collector-Emitter Saturation Voltage IC = - 30mA, IC = - 3mA - 0.8 VBE(Sat) Base-Emitter Saturation Voltage IC = - 30mA, IC = - 3mA - 1.8 fT Current Gain Bandwidth Product VCE = - 30V, IC = - 30mA Cob Output Capacitance VCB = - 30V, f = 1MHz 2.3 pF Cre Reverse Transfer Capacitance VCB = - 30V, f = 1MHz 1.7 pF 400 V V MHz * hFE Classification Classification C D hFE1 40 ~ 80 60 ~ 120 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1406 Typical Characteristics -50 1k IB = -500uA IC[A], COLLECTOR CURRENT IB = -450uA VCE = -10V IB = -400uA -40 hFE, DC CURRENT GAIN IB = -350uA IB = -300uA -30 IB = -250uA IB = -200uA -20 IB = -150uA IB = -100uA -10 100 10 IB = -50uA IB = 0uA -0 -0 -4 -8 -12 -16 1 -0.1 -20 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE -10 -100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -120 VCE = -10V IC[mA], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE Ic = 10 IB -1 -0.1 -0.01 -0.1 -1 -10 -100 -80 -60 -40 -20 -0 -0.0 -100 -0.2 -0.4 -0.6 -0.8 Figure 3. Collector-Emitter Saturation Voltage 100 IE=0 f=1MHz f=1MHz Cre[pF], CAPACITANCE Cob[pF], CAPACITANCE -1.2 Figure 4. Base-Emitter On Voltage 100 10 1 0.1 -0.1 -1.0 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2000 Fairchild Semiconductor International 10 1 0.1 -0.1 -1 -10 -100 V CB[V], COLLECTOR-BASE VOLTAGE Figure 6. Reverse Capacitance Rev. A, February 2000 KSA1406 1000 1000 10ms IC(DC) MAX. 100 T C=25℃ 10 VCEOMax 100 IC(Pulse) MAX. s IC[mA], COLLECTOR CURRENT V CE = -30V 1m fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Typical Characteristics (Continued) 1 10 -1 -10 -100 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area PC[W], POWER DISSIPATION 10 8 Tc 6 4 2 Ta 0 0 25 50 75 100 125 150 175 o T[ C], TEMPERATURE Figure 9. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1406 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E