KSA539
PNP Epitaxial Silicon Transistor
Features
• Low Frequency Amplifier
• Complement to KSC815
• Collector-Base Voltage: VCBO = -60 V
TO-92
• Collector Power Dissipation : PC = 400 mW
1. Emitter
2. Base
3. Collector
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
• Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector)
12
3
Straight Lead
Bulk Packing
1
2
3
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
Top Mark
Package
Packing Method
KSA539CYTA
A539
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-200
mA
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to 150
°C
© 2001 Fairchild Semiconductor Corporation
KSA539 Rev. 1.3
www.fairchildsemi.com
KSA539 — PNP Epitaxial Silicon Transistor
September 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PC
RθJA
Parameter
Value
Unit
Collector Power Dissipation
400
mW
Thermal Resistance, Junction-to-Ambient
310
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVCBO
Collector-Base Breakdown Voltage
IC = -100 μA, IE = 0
-65
V
BVCEO
Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0
-45
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
-5
V
ICBO
Collector Cut-Off Current
VCB = -45 V, IE = 0
-100
nA
IEBO
Emitter Cut-Off Current
VEB = -3 V, IC = 0
-100
nA
DC Current Gain
VCE = -1 V, IC = -50 mA
40
VBE(on)
Base-Emitter On Voltage
VCE = -1 V, IC = -10 mA
-0.60
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
hFE
240
-0.65
-0.90
V
IC = -150 mA, IB = -15 mA
-0.25
-0.50
V
IC = -150 mA, IB = -15 mA
-0.9
-1.2
V
hFE Classification
Classification
R
O
Y
hFE
40 ~ 80
70 ~ 140
120 ~ 240
© 2001 Fairchild Semiconductor Corporation
KSA539 Rev. 1.3
www.fairchildsemi.com
2
KSA539 — PNP Epitaxial Silicon Transistor
Thermal Characteristics(1)
1000
-200
VCE = -1V
IB =-0.8mA
-160
IB =-0.7mA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-180
IB =-0.6mA
-140
IB =-0.5mA
-120
IB =-0.4mA
-100
-80
IB =-0.3mA
-60
IB =-0.2mA
-40
-20
100
IB =-0.1mA
10
-0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-1
-50
-10
-1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-100
Figure 2. DC Current Gain
-200
-10
IC = 10IB
VCE = -1V
IC[mA], COLLECTOR CURRENT
-100
VBE(sat)
-1
-0.1
t)
V CE(sa
-10
-1
-0.01
-1
-10
-100
0
-400
IC[mA], COLLECTOR CURRENT
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
Cob[pF], CAPACITANCE
f = 1MHz
IE= 0
10
1
-1
-10
-100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 5. Collector Output Capacitance
© 2001 Fairchild Semiconductor Corporation
KSA539 Rev. 1.3
www.fairchildsemi.com
3
KSA539 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
KSA539 — PNP Epitaxial Silicon Transistor
Physical Dimensions
Figure 6. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type
© 2001 Fairchild Semiconductor Corporation
KSA539 Rev. 1.3
www.fairchildsemi.com
4
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I77
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
