KSA643YTA

KSA643 PNP Epitaxial Silicon Transistor Features • Low Frequency Power Amplifier • Collector Power Dissipation : PC = 500 mW • Complement to KSD261 TO-92 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1. Emitter 2. Base 3. Collector • Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector) 12 3 Straight Lead Bulk Packing 1 2 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method KSA643YTA A643 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCBO Collector-Base Voltage Parameter -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -500 mA ICP Collector Current (Pulse)(1) -700 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C Note: 1. PW ≤ 10 ms, duty cycle ≤ 50% © 2001 Fairchild Semiconductor Corporation KSA643 Rev. 1.3 www.fairchildsemi.com KSA643 — PNP Epitaxial Silicon Transistor September 2015 Values are at TA = 25°C unless otherwise noted. Symbol PC RθJA Parameter Value Unit Collector Power Dissipation 500 mW Thermal Resistance, Junction-to-Ambient 250 °C/W Note: 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit IC = -100 μA, IE = 0 -40 V Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -20 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5 V ICBO Collector Cut-Off Current VCB = -25 V, IE = 0 -200 nA IEBO Emitter Cut-Off Current VEB = -3 V, IC = 0 -200 nA BVCBO Collector-Base Breakdown Voltage BVCEO BVEBO DC Current hFE VCE(sat) VBE(sat) Gain(3) VCE = -1 V, IC = -100 mA 40 Collector-Emitter Saturation Voltage(3) IC = -500 A, IB = -50 mA Base-Emitter Saturation Voltage(3) IC = -500 A, IB = -50 mA 400 -0.3 -0.4 V -1.0 -1.3 V Note: 3. Pulse Test: PW ≤ 350 μs, duty cycle ≤ 2% hFE Classification Classification R O Y G hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 © 2001 Fairchild Semiconductor Corporation KSA643 Rev. 1.3 www.fairchildsemi.com 2 KSA643 — PNP Epitaxial Silicon Transistor Thermal Characteristics(2) -500 1000 VCE = -1V -450 -400 IB = -1.4mA -350 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB = -1.6mA IB = -1.2mA IB = -1.0mA -300 IB = -0.8mA -250 IB = -0.6mA -200 -150 IB = -0.4mA -100 100 IB = -0.2mA -50 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 10 -1 -20 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE -1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -100 Figure 2. DC Current Gain -1000 -10 VCE = -1V IC[mA], COLLECTOR CURRENT IC = 10 IB VBE(sat) -1 -0.1 VCE(sat) -10 -100 -10 -1 0.0 -0.01 -1 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 Cob [pF], CAPACITANCE IE = 0 f = 100KHz 10 1 -1 -10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance © 2001 Fairchild Semiconductor Corporation KSA643 Rev. 1.3 www.fairchildsemi.com 3 KSA643 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics KSA643 — PNP Epitaxial Silicon Transistor Physical Dimensions Figure 6. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type © 2001 Fairchild Semiconductor Corporation KSA643 Rev. 1.3 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I77 © Fairchild Semiconductor Corporation www.fairchildsemi.com