KSA916OBU

PNP Epitaxial Silicon Transistor KSA916 Features • Audio Power Amplifier • Driver Stage Amplifier • Complement to KSC2316 www.onsemi.com ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Parameter Value Unit VCBO Collector−Base Voltage −120 V VCEO Collector−Emitter Voltage −120 V VEBO Emitter−Base Voltage −5 V −800 mA Symbol IC Collector Current TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C TO−92 3 LF CASE 135AM MARKING DIAGRAM AA9 16Y YWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1: Emitter 2: Collector 3: Base THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) (Note 1) Parameter Value Unit Power Dissipation, by RθJA 900 mW Power Dissipation, by RθJC 3 W Derate Above 25_C, by RθJA 7.2 mW/°C Derate Above 25_C, by RθJC 24 mW/°C RθJA Thermal Resistance, Junction−to−Ambient 130 °C/W RθJC Thermal Resistance, Junction−to−Case 41 °C/W Symbol PD March, 2021 − Rev. 2 A A916Y YWW 2 3 = Assembly Code = Device Code = Date Code ORDERING INFORMATION 1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. © Semiconductor Components Industries, LLC, 2002 1 1 Device KSA916YTA Package Shipping TO−92 3 LF (Pb−Free) 2000 / Fan−Fold Publication Order Number: KSA916/D KSA916 ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector−Base Breakdown Voltage IC = −1 mA, IE = 0 −120 − − V BVCEO Collector−Emitter Breakdown Voltage IC = −10 mA, IB = 0 −120 − − V BVEBO Emitter−Base Breakdown Voltage IE = −1 mA, IC = 0 −5 − − V ICBO Collector Cut−Off Current VCB = −120 V, IE = 0 − − −0.1 mA hFE1 DC Current Gain VCE = −5 V, IC = −10 mA 60 − − hFE2 DC Current Gain VCE = −5 V, IC = −100 mA 80 − 240 Collector−Emitter Saturation Voltage IC = −500 mA, IB = −50 mA − − −1 V Current Gain Bandwidth Product VCE = −5 V, IC = −100 mA − 120 − MHz Output Capacitance VCB = −10 V, IE = 0, f = 1 MHz − − 40 pF VCE(sat) fT Cob Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE CLASSIFICATION Classification O Y hFE2 80 ~ 160 120 ~ 240 www.onsemi.com 2 KSA916 TYPICAL PERFORMANCE CHARACTERISTICS 1000 VCE = −5 V IB = −10 mA IB = −15 mA −800 IB = −7 mA −600 IB = −5 mA −400 IB = −4 mA IB = −3 mA IB = −2 mA −200 0 hFE, DC Current Gain IC, Collector Current (mA) −1000 100 IB = −1 mA IB = 0 0 −2 −4 −6 −8 10 −1 −10 −10 VCE, Collector−Emitter Voltage (V) Figure 2. DC Current Gain −1000 IC = 10 IB IC, Collector Current (mA) VCE(sat), Saturation Voltage (V) −10 −1 1s VCE(sat) −0.1 −0.01 −0.1 −1 −10 −100 −0.2 −0.4 −0.6 −0.8 VBE, Base−Emitter Voltage (V) Figure 3. Collector−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage PC, Power Dissipation (W) 1 ms 100 ms DC Operating TC = 25°C −10 −1.0 4.0 10 ms −1 −10 IC, Collector Current (mA) −1000 −100 −100 −1 0.0 −1000 Single Pulse IC, Collector Current (A) −1000 IC, Collector Current (mA) Figure 1. Static Characteristic −10 −100 3.5 3.0 2.5 2.0 1.5 TA 0.5 0.0 −100 TC 1.0 0 25 50 75 100 125 VCE, Collector−Emitter Voltage (V) TA, Ambient Temperature (5C) Figure 5. Safe Operating Area Figure 6. Power Derating www.onsemi.com 3 150 175 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 8.0x4.9 (LEADFORMED) CASE 135AM ISSUE B DOCUMENT NUMBER: DESCRIPTION: 98AON14058G DATE 14 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 8.0X4.9 (LEADFORMED) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative