PNP Epitaxial Silicon
Transistor
KSA928A
Features
• Audio Power Amplifier
• Complement to KSC2328A
• 3 W Output Application
www.onsemi.com
ABSOLUTE MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted.) (Notes 1, 2)
Parameter
Symbol
Value
Unit
VCBO
Collector−Base Voltage
−30
V
VCEO
Collector−Emitter Voltage
−30
V
VEBO
Emitter−Base Voltage
−5
V
IC
Collector Current
−2
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
−55 to +150
°C
TO−92 3 LF
CASE 135AM
MARKING DIAGRAM
AA9
28AX
YWW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. ON Semiconductor should be consulted on
applications involving pulsed or low−duty−cycle operations.
THERMAL CHARACTERISTICS
1
(Values are at TA = 25°C unless otherwise noted.) (Note 3)
Parameter
Value
Unit
1000
mW
Derate Above 25_C
8.0
mW/°C
Thermal Resistance,
Junction−to−Ambient
125
°C/W
Symbol
PD
RθJA
Power Dissipation
3. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch)
with minimum land pattern size.
© Semiconductor Components Industries, LLC, 2002
March, 2021 − Rev. 2
1
A
A928A
X
YWW
2
1: Emitter
2: Collector
3: Base
3
= Assembly Code
= Device Code
=O/Y
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
KSA928AOTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
KSA928AYTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
Publication Order Number:
KSA928A/D
KSA928A
ELECTRICAL CHARACTERISTICS
(Values are at TA = 25°C unless otherwise noted.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVCBO
Collector−Base Breakdown Voltage
IC = −100 mA, IE = 0
−30
−
−
V
BVCEO
Collector−Emitter Breakdown Voltage
IC = −10 mA, IB = 0
−30
−
−
V
BVEBO
Emitter−Base Breakdown Voltage
IE = −1 mA, IC = 0
−5
−
−
V
ICBO
Collector Cut−Off Current
VCB = −30 V, IE = 0
−
−
−100
nA
IEBO
Emitter Cut−Off Current
VEB = −5 V, IC = 0
−
−
−100
nA
hFE
DC Current Gain
VCE = −2 V, IC = −500 mA
100
−
320
VBE(on)
Base−Emitter On Voltage
VCE = −2 V, IC = −500 mA
−
−
−1.0
V
VCE(sat)
Collector−Emitter Saturation Voltage
IC = −1.5 A, IB = −30 mA
−
−
−2.0
V
Current Gain Bandwidth Product
VCE = −2 V, IC = −500 mA
−
120
−
MHz
Collector Output Capacitance
VCB = −10 V, IE = 0, f = 1 MHz
−
48
−
pF
fT
Cob
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
O
Y
hFE
100 ~ 200
160 ~ 320
www.onsemi.com
2
KSA928A
TYPICAL PERFORMANCE CHARACTERISTICS
−1400
1000
IB = −7 mA
IB = −6 mA
−1000
IB = −5 mA
−800
IB = −4 mA
−600
IB = −3 mA
−400
IB = −2 mA
−200
0
VCE = −2 V
hFE, DC Current Gain
IC, Collector Current (mA)
−1200
IB = −1 mA
0
−2
−4
−6
−8
−10
−12
−14
100
10
−1
−16
−10
VCE, Collector−Emitter Voltage (V)
VCE = −2 V
−1200
IC, Collector Current (mA)
VCE(sat), Saturation Voltage (V)
−1400
−1000
TA = 25°C
−0.1
TA = −40°C
−0.01
−1
−10
−100
−1000
−200
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
Figure 3. Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter On Voltage
−1.4
1.4
IC (Max)
1s
1 ms
DC Operating
TC = 25°C
VCEO (Max)
−0.01
−0.1
−400
VBE, Base−Emitter Voltage (V)
PC, Power Dissipation (W)
−0.1
−600
IC, Collector Current (mA)
IC (Max) Pulse
−1
−800
0
0.0
−10000
−10
IC, Collector Current (A)
−5000
Figure 2. DC Current Gain
TA = 125°C
IC = 50 IB
−1000
IC, Collector Current (mA)
Figure 1. Static Characteristic
−1
−100
−1
−10
−100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
VCE, Collector−Emitter Voltage (V)
TA, Ambient Temperature (5C)
Figure 5. Safe Operating Area
Figure 6. Power Derating
www.onsemi.com
3
150
175
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 8.0x4.9 (LEADFORMED)
CASE 135AM
ISSUE B
DOCUMENT NUMBER:
DESCRIPTION:
98AON14058G
DATE 14 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−92 3 8.0X4.9 (LEADFORMED)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative