KSB1116/1116A
KSB1116/1116A
Audio Frequency Power Amplifier & Medium
Speed Switching
• Complement to KSD1616/1616A
TO-92
1
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: KSB1116
: KSB1116A
Ratings
-60
-80
Units
V
V
VCEO
Collector-Emitter Voltage
: KSB1116
: KSB1116A
-50
-60
V
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current (DC)
-1
A
ICP
* Collector Current (Pulse)
-2
A
PC
Collector Power Dissipation
0.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB= -60V, IE=0
IEBO
Emitter Cut-off Current
VEB= -6V, IC= 0
hFE1
* DC Current Gain
VCE= -2V, IC= -100mA
: KSB1116
: KSB1116A
Min.
Typ.
Max.
-100
Units
nA
-100
nA
VCE= -2V, IC = -1A
135
135
81
VBE (on)
* Base-Emitter On Voltage
VCE= -2V, IC= -50mA
-600
-650
-700
mV
VCE (sat)
* Collector-Emitter Saturation Voltage
IC= -1A, IB= -50mA
-0.2
-0.3
V
VBE (sat)
* Base-Emitter Saturation Voltage
IC= -1A, IB= -50mA
-0.9
-1.2
Cob
Output Capacitance
VCB= -10V, IE=0, f=1MHz
fT
Current Gain Bandwidth Product
VCE= -2V, IC= -100mA
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
VCC= -10V, IC= -100mA
IB1= -IB2= -10mA
VBE (off)= 2~3V
hFE2
70
600
400
V
25
pF
120
MHz
0.07
µs
0.7
µs
0.07
µs
* Pulse Test: PW ≤350µs, Duty Cycle≤2%
hFE Classification
Classification
Y
G
L
hFE1
135 ~ 270
200 ~ 400
300 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A2, January 2002
-1.0
IB = -250µ A
IB = -3.5mA
-80
IB = -150µ A
-60
IB = -100µ A
-40
IB = -50µ A
-20
0
0
-2
-4
-6
-8
-0.8
IB = -2.5mA
IB = -1.5mA
IB = -1.0mA
-0.4
-0.8
-1.0
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
10
-10
-10
IC = 20 IB
VBE(sat)
-1
-0.1
V CE(sat)
-0.01
-0.01
IC[mA], COLLECTOR CURRENT
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
VCC = -10V
IE =0
f = 1MHz
Cob[pF], CAPACITANCE
IC = 10IB1 = -10IB2
tON, tSTG, tF [µ s], TIME
-0.6
Figure 2. Static Characteristic
VCE = -2V
hFE, DC CURRENT GAIN
-0.2
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
-1
IB = -0.5mA
-0.2
Figure 1. Static Characteristic
-0.1
IB = -2.0mA
-0.4
0.0
0.0
-10
IB = -3.0mA
-0.6
VCE[V], COLLECTOR-EMITTER VOLTAGE
1
-0.01
IB = -4.0mA
IB = -4.5mA
IB = -5.0mA
IB = -200µ A
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
-100
1
tSTG
0.1
tF
100
10
tON
0.01
-0.001
-0.01
-0.1
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
©2002 Fairchild Semiconductor Corporation
-1
1
-1
-10
-100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 6. Collector Output Capacitance
Rev. A2, January 2002
KSB1116/1116A
Typical Characteristics
KSB1116/1116A
1000
-10
VCE = -2V
10
1
-0.01
-0.1
-1
-10
IC[mA], COLLECTOR CURRENT
-1
10
ms PW
=1
m
s
200ms
DC
-0.1
-0.01
-1
-10
KSB1116A
100
KSB1116
IC[A], COLLECTOR CURRENT
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Typical Characteristics (Continued)
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
0.8
PC[W], POWER DISSIPATION
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
o
Ta[ C], AMBIENT TEMPERATURE
Figure 9. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, January 2002
KSB1116/1116A
Package Demensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A2, January 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H4
Product Folder - Fairchild P/N KSB1116A - PNP Epitaxial Silicon Transistor
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Product status/pricing/packaging
Product
Product status
Pricing*
Package type
Leads
Packing method
KSB1116AGBU
Full Production
$0.075
TO-92
3
BULK
KSB1116ALBU
Full Production
$0.075
TO-92
3
BULK
KSB1116ALTA
Full Production
$0.075
TO-92
3
TAPE REEL
KSB1116AYTA
Full Production
$0.075
TO-92
3
TAPE REEL
KSB1116AGTA
Full Production
$0.075
TO-92
3
TAPE REEL
KSB1116AYBU
Full Production
$0.075
TO-92
3
BULK
* 1,000 piece Budgetary Pricing
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