KSB811OBU

KSB811 KSB811 Audio Frequency Power Amplifier • Complement to KSD1021 • Collector Current : IC= -1A • Collector Power Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -30 Units V VCEO VEBO Collector-Emitter Voltage -25 V Emitter-Base Voltage -5 IC Collector Current -1.0 V A PC Collector Power Dissipation 350 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE= 0 Min. -30 BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0 -25 BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC= 0 -5 ICBO Collector Cut-off Current VCB= -30V, IE=0 Typ. Max. Units V V V -0.1 70 µA hFE DC Current Gain VCE= -1V, IC= -100mA VCE (sat) Collector-Emitter Saturation Voltage IC= -1A, IB= -0.1A -0.5 400 VBE (sat) Base-Emitter Saturation Voltage IC= -1A, IB= -0.1A -1.2 fT Current Gain Bandwidth Product VCE= -6V, IC= -10mA 110 MHz Cob Output Capacitance VCB= -6V, IE=0, f=1MHz 18 pF V V hFE Classification Classification O Y G hFE 70 ~ 140 120 ~ 240 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB811 Typical Characteristics 1000 -1.0 VCE = -1V -0.9 IB = -7mA IB = -8mA -0.7 IB = -6mA IB = -5mA -0.6 IB = -4mA -0.5 IB = -3mA -0.4 IB = -2mA -0.3 IB = -1mA -0.2 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -0.8 100 10 -0.1 1 -10 -0.0 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 100 IC=10IB f=1MHz IE=0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1000 VBE(sat) -1 VCE(sat) -0.1 -0.01 10 1 -1 -10 -100 -1000 -1 IC[mA], COLLECTOR CURRENT -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 450 PC[mW], POWER DISSIPATION fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 500 VCE = -6V 100 10 400 350 300 250 200 150 100 50 0 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2001 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE Figure 6. Power Derating Rev. A1, June 2001 KSB811 Package Demensions TO-92S 4.00 ±0.20 (1.10) 3.70 ±0.20 2.31 ±0.20 14.47 ±0.30 0.66 MAX. 0.49 ±0.10 1.27TYP [1.27±0.20] 1.27TYP [1.27±0.20] +0.10 0.35 –0.05 2.86 ±0.20 0.77 ±0.10 3.72 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3