KSC1845FBU

NPN Epitaxial Silicon Transistor KSC1845 Features • Audio Frequency Low−Noise Amplifier • Complement to KSA992 • This is a Pb−Free Device www.onsemi.com MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage 120 V VCEO Collector−Emitter Voltage 120 V VEBO Emitter−Base Voltage 5 V IC Collector Current 50 mA IB Base Current 10 mA TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to 150 °C 1 1. Emitter 2. Collector 3. Base 2 3 TO−92 3 4.83x4.76 LEADFORMED CASE 135AR MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AC1 845X YWW THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) (Note 1) Symbol PD Parameter Power Dissipation Derate Above 25°C RqJA Thermal Resistance, Junction−to−Ambient Value Unit 500 mW 4 mW/°C 250 °C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. A C1845 X YWW = Assembly Code = Device Code =P/F/E/U = Date Code ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2002 April, 2021 − Rev. 2 1 Device Package Shipping KSC1845FTA TO−92 3L (Pb−Free) 2000 / Fan−Fold Publication Order Number: KSC1845/D KSC1845 ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Min Typ Max Unit BVCBO Collector−Base Breakdown Voltage Parameter IC = 100 mA, IA = 0 Conditions 120 − − V BVCEO Collector−Emitter Breakdown Voltage IC = 1 mA, IB = 0 120 − − V BVEBO Emitter−Base Breakdown Voltage IE = 100 mA, IC = 0 5 − − V ICBO Collector Cut−Off Current VCB = 120 V, IE = 0 − − 50 nA IEBO Emitter Cut−Off Current VEB = 5 V, IC = 0 − − 50 nA hFE1 DC Current Gain VCE = 6 V, IC = 0.1 mA 150 580 − VCE = 6 V, IC = 1 mA 200 600 1200 hFE2 VBE(on) Base−Emitter On Voltage VCE = 6 V, IC = 1 mA 0.55 0.59 0.65 V VCE(sat) Collector−Emitter Saturation Voltage IC = 10 mA, IB = 1 mA − 0.07 0.30 V Current Gain Bandwidth Product VCE = 6 V, IC = 1 mA 50 100 − MHz Cob Output Capacitance VCB = 30 V, IE = 0, f = 1 MHz − 1.6 2.5 pF NF Noise Figure VCE = −5 V, IC = −1.0 mA, RS = 100 kW, f = 1 kHz − 7 − dB fT Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE CLASSIFICATION Classification P F E U hFE2 200~400 300~600 400~800 600~1200 www.onsemi.com 2 KSC1845 TYPICAL PERFORMANCE CHARACTERISTICS 1.0 IB = 14 mA 8 IB = 12 mA IB = 10 mA 6 IB = 8 mA IB = 6 mA 4 IB = 4 mA 2 0 IB = 2 mA 0 1 2 3 4 IB = 1.0 mA IB = 0.8 mA 0.6 IB = 0.6 mA 0.4 IB = 0.4 mA 0.2 IB = 0.2 mA 0 700 600 500 400 300 200 100 80 0.1 1 10 100 10 VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 100 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain Figure 4. Base−Emitter Saturation Voltage and Collector−Emitter Saturation Voltage f = 1 MHz IE = 0 1 10 10k fT, CURRENT GAIN−BANDWIDTH PRODUCT (MHz) 10 100 IC = 10 IB Pulse Test IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 60 Figure 2. Static Characteristic 800 1 40 Figure 1. Static Characteristic 900 0.1 20 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE = 6 V Pulse Test 0 0.01 IB = 1.2 mA 0.8 0 5 IB = 1.4 mA VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) IB = 16 mA VBE(sat), VCE(sat), SATURATION VOLTAGE (V) IC, COLLECTOR CURRENT (mA) 10 VCE = 6 V 1k 100 10 100 0 VCB, COLLECTOR−BASE VOLTAGE (V) 1 10 IE, EMITTER CURRENT (mA) Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product www.onsemi.com 3 100 KSC1845 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 800 VCE = 6 V Pulse Test PC, POWER DISSIPATION (mW) IC, COLLECTOR CURRENT (mA) 100 10 1 0.1 0.01 0.4 0.5 0.6 0.7 0.8 700 600 500 400 300 200 100 0 0.9 0 VBE, BASE−EMITTER VOLTAGE (V) 25 50 75 100 125 Ta, AMBIENT TEMPERATURE (°C) Figure 7. Collector Current vs. Base−Emitter Voltage Figure 8. Power Derating www.onsemi.com 4 150 175 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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