KSC2316OBU

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSC2316 NPN Epitaxial Silicon Transistor Features • Audio Power Amplifier Applications • Driver Stage Amplifier • Complement to KSA916 TO-92L 1 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2316YTA C2316 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCBO Collector-Base Voltage Parameter 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C Value Unit Power Dissipation 900 mW Derate Above 25°C 7.2 mW/°C Thermal Resistance, Junction-to-Ambient 130 °C/W Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 2002 Fairchild Semiconductor Corporation KSC2316 Rev. 1.4 www.fairchildsemi.com KSC2316 — NPN Epitaxial Silicon Transistor February 2015 Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 IC = 1 mA, IE = 0 BVEBO Emitter-Base Breakdown Voltage IE = 1 mA, IC = 0 Min. V V 5 V Collector Cut-Off Current VCB = 120 V, IE = 0 DC Current Gain VCE = 5 V, IC = 10 mA 60 hFE2 DC Current Gain VCE = 5 V, IC = 100 mA 80 Cob Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA Current Gain Bandwidth Product VCE = 5V, IC = 100 mA Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz Unit 120 ICBO fT Max. 120 hFE1 VCE(sat) Typ. 0.1 μA 240 1 120 V MHz 30 pF hFE Classification Classification O Y hFE2 80 ~ 160 120 ~ 240 © 2002 Fairchild Semiconductor Corporation KSC2316 Rev. 1.4 www.fairchildsemi.com 2 KSC2316 — NPN Epitaxial Silicon Transistor Electrical Characteristics 1000 1000 IB = 10mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = 5V IB = 15mA 800 IB = 7mA 600 IB = 5mA IB = 4mA IB = 3mA 400 IB = 2mA 200 100 IB = 1mA IB = 0 0 0 2 4 6 10 8 10 1 12 VCE[V], COLLECTOR-EMITTER VOLTAGE 100 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC Current Gain 10 10000 VCE = 5V IC = 10 IB IC[mA], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE 10 1 0.1 0.01 0.1 1 10 100 1000 100 10 1 0.0 1000 0.2 0.4 0.6 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10000 s* 1m s * 0m 10 * ms 10 IC[mA], COLLECTOR CURRENT *Single Pulse 1000 DC TC =2 OP ER o AT 5C IN G 100 10 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area © 2002 Fairchild Semiconductor Corporation KSC2316 Rev. 1.4 www.fairchildsemi.com 3 KSC2316 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics KSC2316 — NPN Epitaxial Silicon Transistor Physical Dimensions Figure 6. 3-LEAD, TO-92L, NON-JEDEC 8 MM TALL BODY LEAD FORM TA TYPE © 2002 Fairchild Semiconductor Corporation KSC2316 Rev. 1.4 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT¥ OPTOLOGIC® AccuPower¥ AttitudeEngine™ Awinda® AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ OPTOPLANAR® ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ Sync-Lock™ ®* ® TinyBoost TinyBuck® TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* μSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ Xsens™ ௝❺™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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