KSC2328AYBU

NPN Epitaxial Silicon Transistor KSC2328A Features • Audio Power Amplifier Application • Complement to KSA928A • 3 W Output Application www.onsemi.com ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Parameter Symbol Value Unit VCBO Collector−Base Voltage 30 V VCEO Collector−Emitter Voltage 30 V VEBO Emitter−Base Voltage 5 V IC Collector Current 2 A TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C TO−92 3 LF CASE 135AM TO−92 3 CASE 135AP MARKING DIAGRAM AC2 328AX YWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS 1: Emitter 2: Collector 3: Base (Values are at TA = 25°C unless otherwise noted.) (Note 1) Parameter Value Unit 1000 mW Derate Above 25_C 8.0 mW/°C Thermal Resistance, Junction−to−Ambient 125 °C/W Symbol PD RθJA Power Dissipation 1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. © Semiconductor Components Industries, LLC, 2002 March, 2021 − Rev. 2 1 1 A C2328A X YWW 2 3 = Assembly Code = Device Code =O/Y = Date Code ORDERING INFORMATION Device Package Shipping KSC2328AOTA TO−92 3 LF (Pb−Free) 2000 / Fan−Fold KSC2328AYBU TO−92 3 (Pb−Free) 6000 / Bulk Bag KSC2328AYTA TO−92 3 LF (Pb−Free) 2000 / Fan−Fold Publication Order Number: KSC2328A/D KSC2328A ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector−Base Breakdown Voltage IC = 100 mA, IE = 0 30 − − V BVCEO Collector−Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 − − V BVEBO Emitter−Base Breakdown Voltage IE = 1 mA, IC = 0 5 − − V ICBO Collector Cut−Off Current VCB = 30 V, IE = 0 − − 100 nA IEBO Emitter Cut−Off Current VEB = 5 V, IC = 0 − − 100 nA hFE DC Current Gain VCE = 2 V, IC = 500 mA 100 − 320 VBE(on) Base−Emitter On Voltage VCE = 2 V, IC = 500 mA − − 1.0 V VCE(sat) Collector−Emitter Saturation Voltage IC = 1.5 A, IB = 0.03 A − − 2.0 V Current Gain Bandwidth Product VCE = 2 V, IC = 500 mA − 120 − MHz Collector Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz − 30 − pF fT Cob Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE CLASSIFICATION Classification O Y hFE 100 ~ 200 160 ~ 320 www.onsemi.com 2 KSC2328A TYPICAL PERFORMANCE CHARACTERISTICS IB = 7 mA 1200 IB = 6 mA 1000 IB = 5 mA 800 IB = 4 mA 600 IB = 3 mA 400 IB = 2 mA 200 IB = 1 mA 0 VCE = 2 V 0 2 4 6 8 10 12 14 16 hFE, DC Current Gain IC, Collector Current (mA) 1400 1000 100 10 18 1 10 VCE, Collector−Emitter Voltage (V) 100 1000 IC, Collector Current (mA) Figure 1. Static Characteristic Figure 2. DC Current Gain IC = 50 IB TA = 25°C 1 IC, Collector Current (mA) VBE(sat), VCE(sat), Saturation Voltage (V) 1400 0.1 0.01 1 10 100 1000 200 0.2 0.4 0.6 0.8 1.0 1.2 Figure 3. Collector−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage 1.4 1.4 IC (Max) 1s PC, Power Dissipation (W) IC, Collector Current (A) 400 VBE, Base−Emitter Voltage (V) 1 ms DC Operating TC = 25°C VCEO (Max) 0.01 0.1 600 IC, Collector Current (mA) IC (Max) Pulse 0.1 800 0 0.0 1000 10 1 VCE = 2 V 1200 1 10 100 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 VCE, Collector−Emitter Voltage (V) TA, Ambient Temperature (5C) Figure 5. Safe Operating Area Figure 6. Power Derating www.onsemi.com 3 150 175 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 8.0x4.9 (LEADFORMED) CASE 135AM ISSUE B DOCUMENT NUMBER: DESCRIPTION: 98AON14058G DATE 14 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 8.0X4.9 (LEADFORMED) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 8.0x4.9 CASE 135AP ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13873G TO−92 3 8.0X4.9 DATE 13 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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