NPN Epitaxial Silicon
Transistor
KSC2328A
Features
• Audio Power Amplifier Application
• Complement to KSA928A
• 3 W Output Application
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ABSOLUTE MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted.)
Parameter
Symbol
Value
Unit
VCBO
Collector−Base Voltage
30
V
VCEO
Collector−Emitter Voltage
30
V
VEBO
Emitter−Base Voltage
5
V
IC
Collector Current
2
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
−55 to +150
°C
TO−92 3 LF
CASE 135AM
TO−92 3
CASE 135AP
MARKING DIAGRAM
AC2
328AX
YWW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
1: Emitter
2: Collector
3: Base
(Values are at TA = 25°C unless otherwise noted.) (Note 1)
Parameter
Value
Unit
1000
mW
Derate Above 25_C
8.0
mW/°C
Thermal Resistance,
Junction−to−Ambient
125
°C/W
Symbol
PD
RθJA
Power Dissipation
1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch)
with minimum land pattern size.
© Semiconductor Components Industries, LLC, 2002
March, 2021 − Rev. 2
1
1
A
C2328A
X
YWW
2
3
= Assembly Code
= Device Code
=O/Y
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
KSC2328AOTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
KSC2328AYBU
TO−92 3
(Pb−Free)
6000 /
Bulk Bag
KSC2328AYTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
Publication Order Number:
KSC2328A/D
KSC2328A
ELECTRICAL CHARACTERISTICS
(Values are at TA = 25°C unless otherwise noted.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVCBO
Collector−Base Breakdown Voltage
IC = 100 mA, IE = 0
30
−
−
V
BVCEO
Collector−Emitter Breakdown Voltage
IC = 10 mA, IB = 0
30
−
−
V
BVEBO
Emitter−Base Breakdown Voltage
IE = 1 mA, IC = 0
5
−
−
V
ICBO
Collector Cut−Off Current
VCB = 30 V, IE = 0
−
−
100
nA
IEBO
Emitter Cut−Off Current
VEB = 5 V, IC = 0
−
−
100
nA
hFE
DC Current Gain
VCE = 2 V, IC = 500 mA
100
−
320
VBE(on)
Base−Emitter On Voltage
VCE = 2 V, IC = 500 mA
−
−
1.0
V
VCE(sat)
Collector−Emitter Saturation Voltage
IC = 1.5 A, IB = 0.03 A
−
−
2.0
V
Current Gain Bandwidth Product
VCE = 2 V, IC = 500 mA
−
120
−
MHz
Collector Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
−
30
−
pF
fT
Cob
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
O
Y
hFE
100 ~ 200
160 ~ 320
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2
KSC2328A
TYPICAL PERFORMANCE CHARACTERISTICS
IB = 7 mA
1200
IB = 6 mA
1000
IB = 5 mA
800
IB = 4 mA
600
IB = 3 mA
400
IB = 2 mA
200
IB = 1 mA
0
VCE = 2 V
0
2
4
6
8
10
12
14
16
hFE, DC Current Gain
IC, Collector Current (mA)
1400
1000
100
10
18
1
10
VCE, Collector−Emitter Voltage (V)
100
1000
IC, Collector Current (mA)
Figure 1. Static Characteristic
Figure 2. DC Current Gain
IC = 50 IB
TA = 25°C
1
IC, Collector Current (mA)
VBE(sat), VCE(sat), Saturation
Voltage (V)
1400
0.1
0.01
1
10
100
1000
200
0.2
0.4
0.6
0.8
1.0
1.2
Figure 3. Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter On Voltage
1.4
1.4
IC (Max)
1s
PC, Power Dissipation (W)
IC, Collector Current (A)
400
VBE, Base−Emitter Voltage (V)
1 ms
DC Operating
TC = 25°C
VCEO (Max)
0.01
0.1
600
IC, Collector Current (mA)
IC (Max) Pulse
0.1
800
0
0.0
1000
10
1
VCE = 2 V
1200
1
10
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
VCE, Collector−Emitter Voltage (V)
TA, Ambient Temperature (5C)
Figure 5. Safe Operating Area
Figure 6. Power Derating
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3
150
175
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 8.0x4.9 (LEADFORMED)
CASE 135AM
ISSUE B
DOCUMENT NUMBER:
DESCRIPTION:
98AON14058G
DATE 14 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−92 3 8.0X4.9 (LEADFORMED)
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 8.0x4.9
CASE 135AP
ISSUE A
DOCUMENT NUMBER:
DESCRIPTION:
98AON13873G
TO−92 3 8.0X4.9
DATE 13 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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