KSC2331OBU

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSC2331 NPN Epitaxial Silicon Transistor Features • Low-Frequency Amplifier and Medium Speed Switching • Complement to KSA931 • High Collector-Base Voltage: VCBO = 80 V • Collector Current: IC = 700 mA TO-92L 1 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2331YTA C2331 Y- TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V 700 mA IC Collector Current TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C © 2002 Fairchild Semiconductor Corporation KSC2331 Rev. 1.1.0 www.fairchildsemi.com KSC2331 — NPN Epitaxial Silicon Transistor November 2014 Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Power Dissipation PD RθJA Unit 1 W Derate Above 25°C 8.0 mW/°C Thermal Resistance, Junction-to-Ambient 125 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 80 V BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 60 V BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 8 V ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 hFE DC Current Gain VCE = 2 V, IC = 50 mA Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA VCE(sat) 40 VBE(sat) Base-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA fT Current Gain Bandwidth Product VCE = 10V, IC = 50 mA Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz Cob 30 0.1 μA 0.1 μA 240 0.2 0.7 0.86 1.20 V V 50 MHz 8 pF hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 © 2002 Fairchild Semiconductor Corporation KSC2331 Rev. 1.1.0 www.fairchildsemi.com 2 KSC2331 — NPN Epitaxial Silicon Transistor Thermal Characteristics(1) 240 200 VCE = 2V 200 160 IB = 1.4mA 140 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 180 IB = 1.2mA 120 IB = 1.0mA 100 80 IB = 0.8mA 60 IB = 0.6mA 40 IB = 0.4mA 20 IB = 0.2mA 160 120 80 40 0 0 0 5 10 15 20 25 30 35 40 45 50 1 55 10 1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC Current Gain 1000 10 VCE = 2V IC = 10 IB 1 IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 VBE(sat) 0.1 VCE(sat) 100 10 1 0.0 0.01 1 10 100 1000 0.2 IC[mA], COLLECTOR CURRENT 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10000 1.6 o PC[W], POWER DISSIPATION 1.4 1000 m 00 *2 s IC[mA], COLLECTOR CURRENT 1. Ta = 25 C 2. *Single Pulse DC 100 1.2 1.0 0.8 0.6 0.4 0.2 10 1 10 100 0.0 1000 0 50 75 100 125 150 175 o Ta[ C], AMIBIENT TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area © 2002 Fairchild Semiconductor Corporation KSC2331 Rev. 1.1.0 25 Figure 6. Power Derating www.fairchildsemi.com 3 KSC2331 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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