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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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KSC2333
KSC2333
High Speed Switching Application
• Low Collector Saturation Voltage
• Specified of Reverse Biased SOA With Inductive Load
TO-220
1
1.Base
NPN Epitaxial Silicon Transistor
2.Collector
3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
500
Units
V
400
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
2
A
ICP
*Collector Current (Pulse)
4
A
IB
Base Current (DC)
1
A
PC
Collector Dissipation (TC=25°C)
15
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
*PW≤350µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
Test Condition
IC = 0.5A, IB =0.1A, L = 1mH
Min.
400
VCEX(sus)1
Collector-Emitter Sustaining Voltage
IC = 0.5A, IB1 = -IB2 = 0.1A
TC = 125°C, L = 180µH, clamped
450
V
VCEX(sus)2
Collector-Emitter Sustaining Voltage
IC = 1A, IB1 = 0.2A, -IB2 =0.2A
TC= 125°C, L = 180µH, clamped
400
V
ICBO
Collector Cut-off Current
VCB = 400V, IE = 0
ICER
Collector Cut-off Current
VCE = 400V, RBE =51Ω, TC = 125°C
ICEX1
Collector Cut-off Current
VCE = 400V, VBE(off) = -5V
10
µA
ICEX2
Collector Cut-off Current
VCE = 400V, VBE(off) = -5V @
TC = 125°C
1
mA
10
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE1
hFE2
* DC Current Gain
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.5A
Max.
20
10
Units
V
10
µA
1
mA
80
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
1
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
1.2
V
VCC = 150V, IC = 0.5A
IB1 = - IB2 = 0.1A
RL = 300Ω
1
µs
2.5
µs
1
µs
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2%Pulsed
hFE Classification
Classification
R
O
Y
hFE1
20 ~ 40
30 ~ 60
40 ~ 80
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC2333
Typical Characteristics
1000
IB = 100mA
0.8
VCE = 5V
Pulsed
IB = 90mA
IB = 80mA
IB = 70mA
IB = 60mA
0.6
hFE, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
1.0
IB = 50mA
IB = 40mA
IB = 30mA
IB = 20mA
0.4
IB = 10mA
0.2
100
10
0.0
0
1
2
3
4
1
5
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
IC = 5IB1 = -5IB2
Pulsed
IC /IB = 5
Pulsed
1
tstg
ton[µs], TURN ON TIME
tstg[µs], STORAGE TIME
tf[µs], FALL TIME
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
V BE(sat)
0.1
V CE(sat)
1
tf
ton
0.1
0.01
0.01
1
10
100
10
1000
100
1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Turn On, Storage and Fall Time
vs Collector Current
1.0
10000
1000
ipati
on L
1m
imit
ed
10
S
ite
m
Li
10
m
0µ
S
=1
0µ
S
S
0.7
0.6
0.5
0.4
0.3
0.2
VCEX(SUS)
d
100
0.8
VCEO(SUS)
IC(A), COLLECTOR CURRENT
Diss
b
S/
IC[mA], COLLECTOR CURRENT
0.9
PW
0.1
0.0
10
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Forward Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
0
50
100
150
200
250
300
350
400
450
500
VCE (V), COLLECTOR-EMITTER VOLTAGE
Figure 6. Reverse Bias Safe Operating Area
Rev. A1, June 2001
KSC2333
Typical characteristics (Continued)
20.0
140
17.5
PC[W], POWER DISSIPATION
160
dT(%), Ic DERATING
120
100
80
S/b Limited
60
Dissipation Limited
40
20
0
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Areas
©2001 Fairchild Semiconductor Corporation
0
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. A1, June 2001
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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