NPN Epitaxial Silicon
Transistor
KSC2383
ABSOLUTE MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted.)
Parameter
Symbol
Value
Unit
VCBO
Collector−Base Voltage
160
V
VCEO
Collector−Emitter Voltage
160
V
VEBO
Emitter−Base Voltage
6
V
IC
Collector Current
1
A
IB
Base Current
0.5
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
−55 to +150
°C
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TO−92 3 LF
CASE 135AM
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
AC2
383X
YWW
(Values are at TA = 25°C unless otherwise noted.) (Note 1)
Parameter
Symbol
PD
RθJA
Value
Unit
Power Dissipation
900
mW
Derate Above 25_C
7.2
mW/°C
Thermal Resistance,
Junction−to−Ambient
138
°C/W
1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch)
with minimum land pattern size.
1: Emitter
2: Collector
3: Base
1
A
C2383
X
YWW
2
3
= Assembly Code
= Device Code
=O/Y
= Date Code
ORDERING INFORMATION
Device
© Semiconductor Components Industries, LLC, 2002
March, 2021 − Rev. 3
1
Package
Shipping
KSC2383OTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
KSC2383YTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
Publication Order Number:
KSC2383/D
KSC2383
ELECTRICAL CHARACTERISTICS
(Values are at TA = 25°C unless otherwise noted.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut−Off Current
VCB = 150 V, IE = 0
−
−
1
mA
IEBO
Emitter Cut−Off Current
VEB = 6 V, IC = 0
−
−
1
mA
Collector−Emitter Breakdown Voltage
IC = 10 mA, IB = 0
160
−
−
V
DC Current Gain
VCE = 5 V, IC = 200 mA
60
−
320
VCE(sat)
Collector−Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA
−
−
1.5
V
VBE(on)
Base−Emitter On Voltage
VCE = 5 V, IC = 5 mA
0.45
−
0.75
V
Current Gain Bandwidth Product
VCE = 5 V, IC = 200 mA
20
100
−
MHz
Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
−
−
20
pF
BVCEO
hFE
fT
Cob
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
R
O
Y
hFE
60 ~ 120
100 ~ 200
160 ~ 320
TYPICAL PERFORMANCE CHARACTERISTICS
1000
Emitter Common
TA = 25°C
1.2
IB = 15 mA
1.0
IB = 10 mA
IB = 6 mA
0.8
IB = 4 mA
0.6
IB = 3 mA
IB = 2.5 mA
IB = 2 mA
IB = 1.5 mA
IB = 1 mA
IB = 0.5 mA
0.4
0.2
0.0
0.0
Emitter Common
hFE, DC Current Gain
IC, Collector Current (mA)
1.4
0.2
0.4
0.6
0.8
1.0
1.2
VCE = 5 V
10
100
1000
VCE, Collector−Emitter Voltage (V)
IC, Controller Current (mA)
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1
Emitter Common
TA = 25°C
100
VCE = 10 V
VCE = 5 V
VCE = 1 V
100
VBE(sat), VCE(sat), Saturation
Voltage (V)
hFE, DC Current Gain
100
1
10
1.4
1000
10
VCE = 10 V
Emitter Common
TA = 25°C
0.1
IC / IB = 10
IC / IB = 5
0.01
0.001
1000
1
10
100
1000
IC, Controller Current (mA)
IC, Controller Current (mA)
Figure 3. DC Current Gain
Figure 4. Collector−Emitter Saturation Voltage
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2
KSC2383
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1000
Emitter Common
IC / IB = 10
0.8
Cob, Capacitance (pF)
0.6
0.4
0.2
0.0
0.0
0.2
0.4
0.6
0.8
100
10
1
1.0
Emitter Common
f = 1 MHz
TA = 25°C
1
VBE, Base−Emitter Voltage (V)
1000
Figure 6. Collector Output Capacitance
1000
10
Emitter Common
TA = 25°C
IC, Collector Current (A)
fT, Current Gain Bandwidth Product
(MHz)
100
VCB, Collector Base Voltage (V)
Figure 5. Base−Emitter On Voltage
100
10
1
10
1
10
100
IC Max. (Pulse)
10 ms
100 ms
0.1
IC Max. = 1 A
DC TA = 25°C
0.01
0.001
1000
1 ms
1
VCEO Max.
IC, Collector Current (A)
1.0
1
10
100
VCE, Collector−Emitter Voltage (V)
IC, Collector Current (A)
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
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3
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 8.0x4.9 (LEADFORMED)
CASE 135AM
ISSUE B
DOCUMENT NUMBER:
DESCRIPTION:
98AON14058G
DATE 14 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−92 3 8.0X4.9 (LEADFORMED)
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