KSC3123OMTF

KSC3123 KSC3123 Mixer for UHF TV Tuner 3 • GCE=23dB • CRE=0.4pF 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage 20 V Emitter-Base Voltage 3 V IC Collector Current 50 mA IB Base Current 25 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 1500 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC=1mA, IB=0 Min. 20 ICBO Collector Cut-off Current VCB=25V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=3V, IC=0 1 µA hFE DC Current Gain VCE=10V, IC=5mA 60 fT Current Gain Bandwidth Product VCE=10V, IC=5mA 900 CRE Reverse Transfer Capacitance VCB=10V, IE=0, f=1MHz GCE Conversion Gain VCC=12V, f=200MHz fL=260MHz NF Output Capacitance VCE=12V, f=200MHz, fL=260MHz Typ. Units V 240 1400 0.4 20 Max. MHz 0.5 23 3.8 pF dB 5.5 dB hFE Classification Classification R O Y hFE 60 ~ 120 90 ~ 180 120 ~ 240 Marking HA O hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC3123 fT(MHz), CURRENT GAIN-BANDWIDTH PRODUCT Typical Characteristics 100 10 0.1 1 10 10000 B B 1000 100 0.1 1 IC[mA], COLLECT CURRENT 10 IC(mA), COLLECT CURRENT Figure 1. DC current Gain Figure 2. Current Gain Bandwidth Product 28 32 GCE(dB), CONVERSION GAIN Cre(pF), REVERSE TRANSFER CAPACITANCE 10 1 24 28 20 GCE 24 16 20 12 16 8 NF(dB), NOISE FIGURE hFE, DC CURRENT GAIN 1000 12 NF 4 8 0 0.1 0.1 1 -20 10 -16 -12 -8 -4 0 4 8 VCB(V), COLLECTOR-BASE VOLTAGE Figure 3. CRE-VCB Figure 4. GCE, NF- 30 180 28 PC(mW), COLLECTOR DISSIPATION 26 GCE(dB), POWER GAIN 24 22 20 18 16 14 12 10 8 150 120 90 60 30 6 0 2 4 6 8 10 12 14 0 0 IC(mA), COLLECT CURRENT Figure 5. GCE-IC ©2002 Fairchild Semiconductor Corporation 20 40 60 80 100 120 140 o TA[ C], AMBIENT TEMPERATURE Figure 6. PC-TA Rev. A2, September 2002 KSC3123 Typical Characteristics (Continued) Figure 7. Figure 8. Figure 9. ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC3123 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1