DATA SHEET
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NPN Epitaxial Silicon
Transistor
KSC3503
1. Emitter
2. Collector
3. Base
Features
•
•
•
•
•
•
•
High Voltage: VCEO = 300 V
Low Reverse Transfer Capacitance: Cre = 1.8 pF at VCB = 30 V
Excellent Gain Linearity for Low THD
High Frequency: 150 MHz
Full Thermal and Electrical Spice Models are Available
Complement to KSA1381
These Devices are Pb−Free and are RoHS Compliant
TO−126−3LD
CASE 340AS
MARKING DIAGRAM
Applications
• Audio, Voltage Amplifier and Current Source
• CRT Display, Video Output
• General Purpose Amplifier
AYWWZZ
C3503D
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Units
Collector−Base Voltage
BVCBO
300
V
Collector−Emitter Voltage
BVCEO
300
V
Emitter−Base Voltage
BVEBO
5
V
Collector Current (DC)
IC
100
mA
Collector Current (Pulse)
ICP
200
mA
Total Device Dissipation, TC = 25°C
TC = 125°C
PC
7
1.2
W
W
TJ, TSTG
−50 ~ +150
°C
Junction and Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Note 1)
Thermal Resistance, Junction to Case
= Assembly Location
= Date Code
= Assembly Lot
= Specific Device Code
ORDERING INFORMATION
(TA = 25°C unless otherwise noted)
Parameter
A
YWW
ZZ
C3503D
Symbol
Max.
Units
RqJC
17.8
°C/W
See detailed ordering and shipping information on page 2 of
this data sheet.
1. Device mounted on minimum pad size.
© Semiconductor Components Industries, LLC, 2008
July, 2022 − Rev. 2
1
Publication Order Number:
KSC3503/D
KSC3503
ELECTRICAL CHARACTERISTICS (Note 2) (TA = 25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
BVCBO
Collector−Base Breakdown Voltage
IC = 10 mA, IE = 0
300
V
BVCEO
Collector−Emitter Breakdown Voltage
IC = 1 mA, IB = 0
300
V
BVEBO
Emitter−Base Breakdown Voltage
IE = 10 mA, IC = 0
5
V
ICBO
Collector Cut−Off Current
VCB = 200 V, IE = 0
IEBO
Emitter Cut−Off Current
VEB = 4 V, IC = 0
hFE
DC Current Gain
VCE = 10 V, IC = 10 mA
VCE(sat)
Collector−Emitter Saturation Voltage
IC = 20 mA, IB = 2 mA
0.6
V
VBE(sat)
Base−Emitter Saturation Voltage
IC = 20 mA, IB = 2 mA
1
V
fT
60
0.1
mA
0.1
mA
120
Current Gain Bandwidth Product
VCE = 30 V, IC = 10 mA
150
MHz
Cob
Output Capacitance
VCB = 30 V, f = 1 MHz
2.6
pF
Cob
Output Capacitance
VCB = 30 V, f = 1 MHz
1.8
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
ORDERING INFORMATION
Part Number*
Marking
Package
Shipping
KSC3503DS
C3503D
TO−126−3LD (Pb−Free)
2000 Units / Bulk Box
KSC3503DSTU
C3503D
TO−126−3LD (Pb−Free)
1920 Units / Tube
*Suffix “−TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method.
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2
KSC3503
TYPICAL CHARACTERISTICS
10
I B = 120 μ A
I B = 100 μ A
16
I B = 80 μ A
12
I B = 60 μ A
8
I B = 40 μ A
4
0
I B = 60 μ A
IC, COLLECTOR CURRENT [mA]
IC, COLLECTOR CURRENT [mA]
20
I B = 20 μ A
2
4
6
8
VCE, COLLECTOR−EMITTER VOLTAGE [V]
IB = 40 μ A
6
I B = 30 μ A
4
I B = 20 μ A
2
IB = 0
0
I B = 50 μ A
8
0
10
I B = 10 μ A
IB = 0
0
VBE(sat), VCE(sat), SATURATION VOLTAGE [V]
hFE, DC CURRENT GAIN
VCE= 10V
100
10
10
100
1000
IC, COLLECTOR CURRENT [mA]
80
100
10
IC = 10 I B
1
VBE(sat)
0.1
VCE(sat)
0.01
0.1
Figure 3. DC Current Gain
1
10
100
IC, COLLECTOR CURRENT [mA]
Figure 4. Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
100
160
VCE= 10V
140
f = 1MHz
Cob, CAPACITANCE [pF]
IC, COLLECTOR CURRENT [mA]
60
Figure 2. Static Characteristic
1000
1
40
VCE, COLLECTOR−EMITTER VOLTAGE [V]
Figure 1. Static Characteristic
1
0.1
20
120
100
80
60
40
10
1
20
0
0.0
0.2
0.4
0.6
0.8
1.0
0.1
0.1
1.2
VBE, BASE−EMITTER VOLTAGE [V]
1
10
100
1000
VCB, COLLECTOR−BASE VOLTAGE [V]
Figure 5. Base−Emitter On Voltage
Figure 6. Collector Output Capacitance
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3
KSC3503
Cre, CAPACITANCE [pF]
100
fT, CURRENT GAIN BANDWIDTH PRODUCT [MHz]
TYPICAL CHARACTERISTICS
f=1MHz
10
1
0.1
0.1
1
10
100
1000
VCB, COLLECTOR−BASE VOLTAGE [V]
1000
Figure 7. Reverse Transfer Capacitance
10
1
0.1
1
10
100
1000
IC, COLLECTOR CURRENT [mA]
8
PC, POWER DISSIPATION [W]
IC, COLLECTOR CURRENT [mA]
100
Figure 8. Current Gain Bandwidth Product
1000
ICMAX. (Pulse)
ICMAX.
100
500 ms
1ms
10ms
DC (Ta = 25°C)
10
DC (Tc = 25°C)
1
VCE= 30V
1
10
100
7
6
5
3
2
VCE, COLLECTOR−EMITTER VOLTAGE [V]
TC = 125°C
1
0
1000
TC = 25°C
4
0
25
50
75
100
125
T, TEMPERATURE [°C]
Figure 9. Safe Operating Area
Figure 10. Power Derating
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4
150
175
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−126−3LD
CASE 340AS
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13817G
TO−126−3LD
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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