KSC5019NTA

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSC5019 NPN Epitaxial Silicon Transistor Features • Low Saturation • VCE(sat) = 0.5 V at IC = 2 A, IB = 50 mA TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Emitter 2. Collector 3. Base 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method KSC5019MTA C5019 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCES Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 2 A ICP Collector Current (Pulse)(1) 5 A IB Base Current 2 A TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C Note: 1. PW ≤ 10 ms, duty cycle ≤ 30% © 2002 Fairchild Semiconductor Corporation KSC5019 Rev. 1.4 www.fairchildsemi.com KSC5019 — NPN Epitaxial Silicon Transistor September 2015 Values are at TA = 25°C unless otherwise noted. Symbol PC RθJA Parameter Value Unit Collector Power Dissipation 750 mW Thermal Resistance, Junction-to-Ambient 160 °C/W Note: 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 IEBO Emitter Cut-Off Current VEB = 6 V, IC = 0 Min. Typ. Max. Unit 100 nA 100 nA BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 10 V BVEBO Emitter-Base Breakdown Voltage 6 V hFE1 DC Current Gain hFE2 IE = 1 mA, IC = 0 VCE = 1 V, IC = 0.5 A 140 VCE = 1 V, IC = 2 A 70 600 200 VCE(sat) Collector-Emitter Saturation Voltage IC = 2 A, IB = 50 mA 0.2 0.5 V VBE(on) Base-Emitter On Voltage VCE = 1 V, IC = 2 A 0.86 1.50 V Current Gain Bandwidth Product VCE = 1 V, IC = 0.5 A 150 MHz Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 27 pF fT Cob hFE Classification Classification L M N P hFE1 140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600 © 2002 Fairchild Semiconductor Corporation KSC5019 Rev. 1.4 www.fairchildsemi.com 2 KSC5019 — NPN Epitaxial Silicon Transistor Thermal Characteristics(2) IB = 50mA IB = 40mA 10,000 EMITTER COMMON o Ta=25 C EMITTER COMMON VCE=1V IB = 30mA 4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 IB = 20mA 3 2 IB = 10mA IB = 5mA 1 1,000 100 10 IB = 0mA 1 0.01 0 0 1 2 3 4 5 VCE[V], COLLECTOR-EMITTER VOLTAGE EMITTER COMMON VCE=1V IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE 5 0.1 4 3 2 1 0 0.0 0.01 1 0.2 0.4 0.6 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1000 10 s IC MAX. (DC) PC[mW], POWER DISSIPATION m s 0m 10 10 s 1m IC MAX. (Pulse) 1 0.1 VCEO MAX. IC[A], COLLECTOR CURRENT 10 Figure 2. DC Current Gain EMITTER COMMON IC/IB=40 0.1 1 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 1 0.1 0.01 0.01 800 600 400 200 0 0.1 1 10 0 100 100 150 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area © 2002 Fairchild Semiconductor Corporation KSC5019 Rev. 1.4 50 Figure 6. Power Derating www.fairchildsemi.com 3 KSC5019 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics KSC5019 — NPN Epitaxial Silicon Transistor Physical Dimensions Figure 7. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type © 2002 Fairchild Semiconductor Corporation KSC5019 Rev. 1.4 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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