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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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KSC5021
NPN Silicon Transistor
• High Voltage and High Reliability
• High Speed Switching : tF = 0.1ms (Typ.)
• Wide SOA
1
1.Base
Absolute Maximum Ratings
Symbol
TO-220
2.Collector
3.Emitter
TC = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
5
A
ICP
Collector Current (Pulse)
10
A
IB
Base Current
2
A
PC
Collector Dissipation (TC=25°C)
50
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
1
KSC5021 — NPN Silicon Transistor
October 2008
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 1mA, IE = 0
800
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
500
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
7
V
VCEX(sus)
Collector-Emitter Sustaining Voltage
IC = 2.5A, IB1 = -IB2 = 1A
L = 1mH, Clamped
500
V
ICBO
Collector Cut-off Current
VCB = 500V, IE = 0
10
mA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
10
mA
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.6A
VCE = 5V, IC = 3A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 3A, IB = 0.6A
1
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 3A, IB = 0.6A
1.5
V
Cob
Output Capacitance
VCB = 10V, IE = 0, f=1MHz
80
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.6A
18
MHz
tON
Turn On Time
tSTG
Storage Time
VCC = 200V
IC = 5IB1 = -2.5IB2 = 4A
RL = 50W
tF
Fall Time
15
8
50
0.5
ms
3
ms
0.3
ms
* Pulse Test: PW £ 300ms, Duty Cycle £ 2%
hFE Classification
Classification
R
O
Y
hFE1
15 ~ 30
20 ~ 40
30 ~ 50
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
2
KSC5021 — NPN Silicon Transistor
Electrical Characteristics
KSC5021 — NPN Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain (R-Grade)
100
5.0
VCE = 5V
4.5
IC [A], COLLECTOR CURRENT
O
4.0
IB = 300mA
hFE, DC CURRENT GAIN
3.5
3.0
2.5
IB = 100mA
2.0
1.5
Ta = 75 C
O
IB = 50mA
1.0
Ta = 125 C
O
Ta = - 25 C
O
Ta = 25 C
10
0.5
0.0
0
1
2
3
4
5
6
7
8
9
1
0.01
10
0.1
Figure 3. DC Current Gain (O-Grade)
10
VCE(sat) [V], SATURATION VOLTAGE
VCE = 5V
O
O
Ta = 75 C
hFE, DC CURRENT GAIN
Ta = 125 C
O
Ta = - 25 C
O
Ta = 25 C
10
1
0.01
0.1
1
IC = 4 IB
O
Ta = 125 C
1
O
Ta = 75 C
O
Ta = - 25 C
0.1
O
Ta = 25 C
0.01
0.01
10
0.1
Figure 5. Saturatin Voltage (O-Grade)
10
Figure 6. Saturation Voltage (R-Grade)
10
10
IC = 4 IB
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
1
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CUTRRENT
O
Ta = 125 C
1
O
Ta = 75 C
O
Ta = - 25 C
0.1
O
Ta = 25 C
0.1
1
IC = 4 IB
O
1
Ta = 25 C
O
Ta = - 25 C
O
Ta = 125 C
O
Ta = 75 C
0.1
0.01
0.01
10
IC [A], COLLECTOR CURRENT
0.1
1
10
IC [A], COLLECTOR CURRENT
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
10
Figure 4. Saturation Voltage (R-Grade)
100
0.01
0.01
1
IC [A], COLLECTOR CUTRRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
www.fairchildsemi.com
3
1000
5
4
IB = 600mA
V CE = 5V
IB = 400mA
IB = 1A
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB = 800mA
IB = 1.2A
IB = 200mA
3
IB = 100mA
2
IB = 50mA
1
100
10
IB = 20mA
0
IB = 0
0
2
4
6
8
1
0.01
10
0.1
VCE[V], COLLECTOR-EMITTER VOLTAGE
10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
6
10
IC = 5 IB
VCE = 5V
5
1
IC[A], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1
VBE(sat)
0.1
VCE(sat)
0.01
0.01
0.1
1
4
3
2
1
0
0.0
10
0.2
IC[A], COLLECTOR CURRENT
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
10
IC[A], COLLECTOR CURRENT
10
ms
1
0.1
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
Figure 6. Safe Operating Area
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
1
0.01
0.01
0.1
0
50
tF
DC
s
tON
0.1
IC(max)
s
1m
1
50ms
ICP (max)
10
m
10
tON, tSTG, tF [ms], TIME
tSTG
www.fairchildsemi.com
4
KSC5021 — NPN Silicon Transistor
Typical Characteristics
80
100
70
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
IB2 = -1A
L = 200mH
10
1
0.1
0.01
10
50
40
30
20
10
0
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
60
www.fairchildsemi.com
5
KSC5021 — NPN Silicon Transistor
Typical Characteristics (Continued)
KSC5021 — NPN Silicon Transistor
Package Dimension
Dimensions in Millimeters
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
6
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THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1.
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which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
KSC5021 Rev. A1
www.fairchildsemi.com
7
KSC5021 NPN Silicon Transistor
TRADEMARKS
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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