KSC5026MOS

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V 1.5 A 5 A 0.8 A Symbol Parameter IC Collector Current (DC) ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 to 150 °C Package Marking and Ordering Information Part Number Marking Package Packing Method KSC5026MOS* C5026M-O TO-126 BULK Remarks * The suffix "M" & "S" of FSID denotes TO126 package and the suffix "O" of FSID denotes hFE-class © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 www.fairchildsemi.com 1 KSC5026M — NPN Silicon Transistor January 2011 Symbol TA = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 800 V 7 V Collector-Emitter Sustaining Voltage IC = 0.75A, IB1 = -IB2 = 0.15A, L = 5mH, Clamped 800 V ICBO Collector Cut-off Current VCB = 800V, IE = 0 IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.75A, IB = 0.15A VBE(sat) Base-Emitter Saturation Voltage IC = 0.75A, IB = 0.15A Output Capacitance VCB = 10V, IE = 0, f = 1MHz 35 15 BVEBO VCEX(sus) Cob fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A tON Turn On Time tSTG Storage Time VCC = 400V IC = 5IB1 = -2.5IB2 = 1A RL = 400Ω tF Fall Time 10 8 10 μA 10 μA 40 2 1.5 V V pF MHz 0.5 μs 3 μs 0.3 μs hFE Classification Classification N R O hFE1 10 ~ 20 15 ~ 30 20 ~ 40 © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 www.fairchildsemi.com 2 KSC5026M — NPN Silicon Transistor Electrical Characteristics 2.0 1000 VCE = 5V 1.6 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1.8 1.4 1.2 IB = 120mA 1.0 IB = 100mA IB = 80mA IB = 60mA IB = 40mA 0.8 0.6 IB = 20mA 0.4 IB = 10mA IB = 5mA IB = 0 0.2 0.0 0 1 2 3 4 5 6 7 8 9 100 10 1 0.01 10 0.1 10 Figure 1. Static Characteristic Figure 2. DC current Gain 1.6 10 VCE = 5V IC = 5 IB 1 0.1 IC[A], COLLECTOR CURRENT 1.4 VBE(sat) VCE(sat) 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.01 0.1 1 0.0 0.0 10 0.2 IC[A], COLLECTOR CURRENT 0.4 0.6 0.8 1.0 Figure 4. Base-Emitter On Voltage 10 10 IC[A], COLLECTOR CURRENT 0.1 0.01 0.1 1 DC ms 10 tON tF IC(max) 1 s 1m tSTG 1 s 0μ 10 IC(max).(Pulse) 0.1 0.01 1E-3 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage tON, tSTG, tF [μs], TIME 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 www.fairchildsemi.com 3 KSC5026M — NPN Silicon Transistor Typical Performance Characteristics (Continued) 100 30 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT IB2 = -0.15A 10 1 0.1 0.01 10 10 0 100 1000 10000 0 25 50 75 100 125 150 175 o VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 20 www.fairchildsemi.com 4 KSC5026M — NPN Silicon Transistor Typical Performance Characteristics 3.45 3.05 8.30 7.70 4.00 3.80 14.20 MAX 3.20 11.20 10.80 1.95 1.55 1.35 1.70 1.50 D 0.85 0.65 3X #1 2.29 FRONT VIEW NOTES: A. B. C. 0.60 0.45 3X 0.254 M SIDE VIEW TOP VIEW 3° 1.00 E PRODUCTION CODE TSSTU TSTU NONE (STD LENGTH) TERMINAL LENGTH "D" 3.45 - 4.05 2.36 - 2.96 TERMINAL LENGTH "E" 6.45-7.45 5.36-6.36 12.76 - 13.36 15.76-16.76 NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE ALL DIMENSIONS ARE IN MILLIMETERS DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS D FOR TERMINAL LENGTH "D", REFER TO TABLE E F. FOR TERMINAL LENGTH "E", REFER TO TABLE DRAWING FILENAME: MKT-TO126AArev2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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