KSC5305DFTTU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. KSC5305DF NPN Silicon Transistor Features Equivalent Circuit C • High Voltage High Speed Power Switch B Application • • • • TO-220F 1 1.Base 3.Emitter E Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product Low base drive requirement Absolute Maximum Ratings Symbol 2.Collector TA=25°C unless otherwise noted Parameter Value Units VCBO Collector Base Voltage 800 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 12 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C -65 to +150 °C Rating Units TSTG Storage Temperature range Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 3.125 °C/W RθJA Thermal Resistance, Junction to Ambient 69.5 °C/W © 2009 Fairchild Semiconductor Corporation KSC5305DF Rev. A3 www.fairchildsemi.com 1 KSC5305DF — NPN Silicon Transistor September 2009 Symbol TA=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=1mA, IE=0 800 - - V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 - - V BVEBO Emitter Cut-off Current IE=1mA, IC=0 12 - - V ICBO Collector Cut-off Current VCB=500V, IE=0 - - 10 μA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 - - 10 μA hFE1 hFE2 DC Current Gain VCE=1V, IC=0.8A VCE=1V,IC=2A 22 8 - - VCE(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A IC=2A, IB=0.4A - - 0.4 0.5 V V VBE(sat) Base-Emitter Saturation Voltage IC=0.8A, IB=0.08A IC=2A, IB=0.4A - - 1.0 1.0 V V Cob Output Capacitance VCB = 10V, f=1MHz - - 75 pF tON Turn On Time - - 150 ns tSTG Storage Time - - 2 μs - - 0.2 μs VCC=15V,VZ=300V IC = 2A,IB1 = 0.4A IB2 = -0.4A, LC=200μH - - 2.25 μs - - 150 ns tF tSTG Fall Time Storage Time VCC=300V, IC =2A IB1 = 0.4A, IB2=-1A RL = 150Ω tF Fall Time VF Diode Forward Voltage IF = 1A IF = 2A - - 1.5 1.6 V V trr * Reverse recovery time (di/dt = 10A/μs) IF = 0.4A IF = 1A IF = 2A - 800 1.4 1.9 - ns μs μs * Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10% © 2009 Fairchild Semiconductor Corporation KSC5305DF Rev. A3 www.fairchildsemi.com 2 KSC5305DF — NPN Silicon Transistor Electrical Characteristics 100 IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA 4 3 o IB = 100mA IB = 50mA 2 VCE = 1V o Ta = 125 C 25 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 1 o -25 C 10 IB = 0 0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 100 VCE = 5V Ta = 125 C hFE, DC CURRENT GAIN o 25 C o -20 C 10 1 0.01 0.1 1 10 IC = 10 IB 1 VBE(sat) VCE(sat) 0.1 0.01 0.01 10 0.1 Figure 3. DC current Gain 10 IC = 5IB VBE(sat), SATURATION VOLTAGE VCE(sat)[V], SATURATION VOLTAGE IC = 5IB o 25 C 1 o Ta = 125 C o -20 C 0.1 1 1 0.1 0.01 10 IC[A], COLLECTOR CURRENT o -20 C o 25 C o Ta = 125 C 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage © 2009 Fairchild Semiconductor Corporation KSC5305DF Rev. A3 10 Figure 4. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 0.01 0.01 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 0.1 10 Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic o 1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE www.fairchildsemi.com 3 KSC5305DF — NPN Silicon Transistor Typical Performance Characteristics 1000 10 f = 1MHz VCC = 300V IC = 5IB1 = -2.5IB2 Cob[pF], CAPACITANCE tSTG, tF [μs], TIME tSTG 1 tF 0.1 100 10 1 0.01 0.1 1 1 10 10 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 7. Switching Time Figure 8. Collector Output Capacitance 10 Vf [V], FORWARD DIODE VOLTAGE trr[μs], REVERSE RECOVERY TIME 1.6 1.4 1.2 1.0 0.8 1.0 1.5 1 0.1 0.01 2.0 0.1 If[A], FORWARD CURRENT 1 10 IF[A], FORWARD DIODE CURRENT Figure 9. Reverse Recovery Time Figure 10. Forward Diode Voltage 100 60 50 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 10 1μs 10μs DC 1 5ms 1ms 0.1 30 20 10 0 0.01 10 100 0 1000 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 11. Safe Operating Area Figure 12. Power Derating © 2009 Fairchild Semiconductor Corporation KSC5305DF Rev. A3 40 www.fairchildsemi.com 4 KSC5305DF — NPN Silicon Transistor Typical Performance Characteristics KSC5305DF — NPN Silicon Transistor Physical Dimension 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation KSC5305DF Rev. A3 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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