KSC5305DTU

Features • • • • • High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product Low base drive requirement Equivalent Circuit C B TO-220 1 1.Base Absolute Maximum Ratings 2.Collector 3.Emitter E Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage 800 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 12 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation (TC=25°C) 75 W TJ Junction Temperature 150 °C - 65 to 150 °C TSTG Storage Temperature * Pulse Test : Pulse Width = 5mS, Duty cycles ≤ 10% Thermal Characteristics Symbol Rθjc Parameter Thermal Resistance Rθja © 2010 Semiconductor Components Industries, LLC. October-2017,Rev. 1 Rating Units Junction to Case 1.65 °C/W Junction to Ambient 62.5 °C/W Publication Order Number: KSC5305D KSC5305D — NPN Silicon Transistor KSC5305D NPN Silicon Transistor Symbol Ta=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=1mA, IE=0 800 - - V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 - - V BVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 12 - - V ICBO Collector Cut-off Current VCB=500V, IE=0 - - 10 µA IEBO Emitter Cut-off Current VEB= 9V, IC= 0 - - 10 µA hFE1 hFE2 DC Current Gain VCE=1V, IC=0.8A VCE=1V, IC=2A 22 8 - - VCE(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A IC=2A, IB=0.4A - - 0.4 0.5 V V VBE(sat) Base-Emitter Saturation Voltage IC=0.8A, IB=0.08A IC=2A, IB=0.4A - - 1.0 1.0 V V Cob Output Capacitance VCB=10V, f=1MHz - - 75 pF tON Turn On Time - 150 ns Storage Time VCC=300V, IC=2A, IB1=0.4A, IB2=-1A, RL=150Ω - tSTG - - 2 µs - - 0.2 µs VCC=15V, VZ=300V, IC=2A, IB1=0.4A, IB2=-0.4A, LC=200µH - - 2.25 µs - - 150 ns tF tSTG Fall Time Storage Time tF Fall Time VF Diode Forward Voltage IF=1A IF=2A - - 1.5 1.6 V V trr * Reverse recovery time (di/dt = 10A/µs) IF=0.4A IF=1A IF=2A - 800 1.4 1.9 - ns µs µs * Pulse Test : Pulse Width = 5mS, Duty cycles ≤ 10% www.onsemi.com 2 KSC5305D — NPN Silicon Transistor Electrical Characteristics 100 IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA 4 3 o IB = 100mA IB = 50mA 2 VCE = 1V o Ta = 125 C 25 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 1 o -25 C 10 IB = 0 0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 VCE = 5V Ta = 125 C hFE, DC CURRENT GAIN o 25 C o -20 C 10 1 0.01 0.1 1 10 10 IC = 10 IB 1 VBE(sat) VCE(sat) 0.1 0.01 0.01 0.1 IC[A], COLLECTOR CURRENT IC = 5IB VBE(sat), SATURATION VOLTAGE VCE(sat)[V], SATURATION VOLTAGE 10 o 25 C 1 o Ta = 125 C 0.01 0.01 o -20 C 0.1 1 10 Figure 4. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 5IB 0.1 1 IC[A], COLLECTOR CURRENT Figure 3. DC current Gain 10 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE o 1 10 1 0.1 0.01 IC[A], COLLECTOR CURRENT Figure 5. Collector-Emitter Saturation Voltage o -20 C o 25 C o Ta = 125 C 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 6. Base-Emitter Saturation Voltage www.onsemi.com 3 KSC5305D — NPN Silicon Transistor Typical Characteristics (Continued) 1000 10 f = 1MHz VCC = 300V IC = 5IB1 = -2.5IB2 Cob[pF], CAPACITANCE tSTG, tF [µs], TIME tSTG 1 tF 0.1 0.01 0.1 1 100 10 1 10 1 Figure 7. Switching Time Figure 8. Collector Output Capacitance 10 Vf [V], FORWARD DIODE VOLTAGE 1.6 1.4 1.2 1.0 0.8 1.0 1.5 1 0.1 0.01 2.0 0.1 Figure 9. Reverse Recovery Time 10 Figure 10. Forward Diode Voltage 100 PC[W], POWER DISSIPATION 100 10 1µs 10µs DC 1 5ms 1ms 0.1 0.01 10 1 IF[A], FORWARD DIODE CURRENT If[A], FORWARD CURRENT IC[A], COLLECTOR CURRENT 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT trr[µs], REVERSE RECOVERY TIME 10 100 80 60 40 20 0 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 o TC[ C], CASE TEMPERATURE Figure 11. Safe Operating Area Figure 12. Power Derating www.onsemi.com 4 150 175 KSC5305D — NPN Silicon Transistor Typical Characteristics (Continued) Vcc = 50V VBE(off) = -5V LC = 1mH Ic = 4 Ib 8 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 9 7 6 5 4 -5V 3 2 1 0 200 300 400 500 600 700 800 6 4 Ic = 5 Ib 3 VCE[V], COLLECTOR-EMITTER VOLTAGE Ic = 4 Ib Ic = 3.3 Ib 2 Ic = 2.2 Ib 1 0 900 Vcc = 50V VBE(off) = -5V LC = 1mH 5 0 1 2 3 4 5 6 7 8 ICE[A], COLLECTOR CURRENT Figure 13. Reverse Bias Safe Operating Figure 14. RBSOA Saturation www.onsemi.com 5 9 10 KSC5305D — NPN Silicon Transistor Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com