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KSC5338D/KSC5338DW
NPN Triple Diffused Planar Silicon Transistor
Features
•
•
•
•
•
•
High Voltage Power Switch Switching Application
Wide Safe Operating Area
Built-in Free-Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Two Package Choices : TO-220 or D2-PAK
Equivalent Circuit
D2-PAK
C
1
B
TO-220
E
1
1.Base
2.Collector
Absolute Maximum Ratings
3.Emitter
Ta=25°C unless otherwise noted
Symbol
Value
Units
VCBO
Collector-Base Voltage
Parameter
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current (DC)
5
A
ICP
*Collector Current (Pulse)
10
A
A
IB
Base Current (DC)
2
IBP
*Base Current (Pulse)
4
A
PC
Power Dissipation (TC=25°C)
75
W
TJ
Junction Temperature
150
°C
- 55 to 150
°C
Rating
Units
Junction to Case
1.65
°C/W
Junction to Ambient
62.5
°C/W
270
°C
TSTG
Storage Temperature
* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%
Thermal Characteristics
Symbol
Rθjc
Rθja
TL
Parameter
Thermal Resistance
Maximum Lead Temperature for Soldering
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
www.fairchildsemi.com
1
KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
May 2010
Symbol
Ta=25°C unless otherwise noted
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=1mA, IE=0
1000
V
BVCEO
Collector-Emitter Breakdown Voltage IC=5mA, IB=0
Emitter-Base Breakdown Voltage
IE=1mA, IC=0
450
V
12
V
BVEBO
ICBO
Collector Cut-off Current
VCB=800V, IE=0
10
µA
ICES
Collector Cut-off Current
VCES=1000V, IEB=0 Ta=25°C
100
µA
ICEO
Collector Cut-off Current
VCE=450V, IB=0
IEBO
Emitter Cut-off Current
VEB=10V, IC=0
hFE
DC Current Gain
VCE=1V, IC=0.8A
VCE(sat)
Collector-Emitter Saturation Voltage
Ta=125°C
500
µA
Ta=25°C
100
µA
Ta=125°C
500
µA
10
µA
0.5
V
Ta=25°C
15
25
Ta=125°C
10
14
VCE=1V, IC=2A
Ta=25°C
6
9
Ta=125°C
4
6
VCE=2.5V, IC=1A
Ta=25°C
18
25
Ta=125°C
14
IC=0.8A, IB=0.08A Ta=25°C
IC=2A, IB=0.4A
Ta=125°C
0.55
0.75
V
Ta=25°C
0.47
0.75
V
Ta=125°C
0.9
1.1
V
0.9
1.5
V
IC=0.8A, IB=0.04A Ta=25°C
IC=1A, IB=0.2A
VBE(sat)
Base-Emitter Saturation Voltage
Ta=125°C
1.8
2.5
V
Ta=25°C
0.22
0.5
V
Ta=125°C
0.3
0.6
V
IC=0.8A, IB=0.08A Ta=25°C
IC=2A, IB=0.4A
18
0.35
0.8
1.0
V
Ta=125°C
0.65
0.9
V
Ta=25°C
0.9
1.0
V
Ta=125°C
0.8
0.9
V
Cib
Input Capacitance
VEB=10V, IC=0.5A, f=1MHz
550
750
pF
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
60
100
pF
fT
Current Gain Bandwidth Product
IC=0.5A,VCE=10V
VF
Diode Forward Voltage
IF=1A, IC=1mA,
IE=0
Ta=25°C
0.86
Ta=125°C
0.79
IF=2A
Ta=25°C
0.95
Ta=125°C
0.88
V
460
360
325
ns
ns
ns
tfr
VCE(DSAT)
11
MHz
1.3
V
V
1.5
V
Diode Forward Recovery Time
(di/dt=10A/µs)
IF=0.4A
IF=1A
IF=2A
Dynamic Saturation Voltage
IC=1A, IB1=100mA
VCC=300V at 1 µs
Ta=25°C
8
V
Ta=125°C
15
V
IC=1A, IB1=100mA
VCC=300V at 3 µs
Ta=25°C
2.9
V
Ta=125°C
8
V
IC=2A, IB1=400mA
VCC=300V at 1 µs
Ta=25°C
9
V
Ta=125°C
17
V
IC=2A, IB1=400mA
VCC=300V at 3 µs
Ta=25°C
1.9
V
Ta=125°C
8.5
V
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
www.fairchildsemi.com
2
KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
Electrical Characteristics
Symbol
Parameter
Test Condition
Min
Typ.
Max.
Units
500
750
ns
1.5
µs
100
200
ns
150
ns
2.2
µs
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40µs)
tON
Turn On Time
tSTG
Storage Time
tF
tON
tSTG
tF
1.2
Fall Time
Turn On Time
Storage Time
Fall Time
tON
Turn On Time
tSTG
Storage Time
tF
IC=2.5A, IB1=500mA,
IB2=-1A, VCC=250V, RL = 100Ω
Fall Time
IC=2A,
IB1=400mA,
IB2=-1A,
VCC=300V,
RL = 150Ω
IC=2.5A,
IB1=500mA,
IB2=-5mA,
VCC=300V,
RL = 120Ω
Ta=25°C
100
Ta=125°C
150
Ta=25°C
1.4
Ta=125°C
1.7
Ta=25°C
90
Ta=125°C
150
Ta=25°C
120
Ta=125°C
Ta=25°C
ns
µs
150
ns
150
ns
2.1
µs
ns
150
1.8
Ta=125°C
2.6
Ta=25°C
110
Ta=125°C
160
Ta=25°C
1.9
ns
µs
150
ns
ns
INDUCTIVE LOAD SWITCHING (VCC=15V)
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
IC=2.5A,
IB1=500mA,
IB2=-0.5A,
VZ=350V,
LC=300µH
Ta=125°C
2.4
Ta=25°C
160
Ta=125°C
330
Ta=25°C
350
Ta=125°C
tSTG
tF
tC
tSTG
tF
tC
Storage Time
Fall Time
Cross-over Time
Storage Time
Fall Time
Cross-over Time
IC=2A,
IB1=400mA,
IB2=-0.4A,
VZ=300V,
LC=200µH
IC=1A,
IB1=100mA,
IB2=-0.5A,
VZ=300V,
LC=200µH
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
Ta=25°C
2.2
µs
200
ns
500
ns
2.25
µs
ns
750
1.95
Ta=125°C
2.9
Ta=25°C
120
Ta=125°C
270
Ta=25°C
300
Ta=125°C
700
Ta=25°C
0.6
Ta=125°C
1.0
µs
ns
µs
150
ns
ns
450
ns
ns
0.8
µs
µs
Ta=25°C
70
ns
Ta=125°C
110
ns
Ta=25°C
80
Ta=125°C
170
130
ns
ns
www.fairchildsemi.com
3
KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
Electrical Characteristics (Continued) Ta=25°C unless otherwise noted
100
IB = 1A
0.9A
0.8A
0.7A
0.6A
0.5A
0.4A
4
0.3A
3
0.2A
2
IB = 0.1A
o
TJ = -25 C
10
o
TJ = 125 C
1
0
IB = 0
0
2
4
6
8
1
0.01
10
0.1
VCE = 5V
o
hFE, DC CURRENT GAIN
TJ = +25 C
o
TJ = -25 C
10
o
TJ = 125 C
1
0.01
0.1
1
10
IC = 5IB
o
TJ = 125 C
1
O
TJ = +25 C
o
TJ = -25 C
0.1
1E-3
10
0.01
IC[A], COLLECTOR CURRENT
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
10
10
VBE(sat)[V], BASE-EMITTER VOLTAGE
IC = 10IB
o
TJ = 125 C
1
o
TJ = +25 C
o
TJ = -25 C
0.1
1E-3
10
Figure 2. DC current Gain
VCE(sat)[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100
1
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE(sat)[V], COLLECTOR-EMITTER VOLTAGE
VCE = 1V
o
TJ = +25 C
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
5
0.01
0.1
1
1
o
TJ = -25 C
o
TJ = 125 C
o
TJ = +25 C
0.1
1E-3
10
IC[A], COLLECTOR CURRENT
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
IC = 5IB
www.fairchildsemi.com
4
KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
Typical Characteristics
(Continued)
2000
IC = 10IB
f = 1MHz
1000
1
Cob, Cib[pF], CAPACITANCE
VBE(sat)[V], BASE-EMITTER VOLTAGE
10
o
TJ = -25 C
o
TJ = 125 C
o
TJ = +25 C
0.1
1E-3
0.01
0.1
1
Cib
100
Cob
10
10
1
10
IC[A], COLLECTOR CURRENT
REVERSE VOLTAGE [V]
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Collector Output Capacitance
10
di/dt = 10A/µS
VCC = 250V
IC = 5IB1 = 2.5IB2
o
TC = 25 C
450
tSTG, tF[ns], SWITCHING TIME
tfr,[ns], FORWARD RECOVERY TIME
500
400
350
300
250
0.25
0.50
0.75
1.00
1.25
1.50
1.75
tSTG
1
0.1
0.01
2.00
tF
1
0.2
IF[A], FORWARD CURRENT
10
IC[A], COLLECTOR CURRENT
Figure 9. Forward Recovery Time
Figure 10. Switching Time
5
2000
tC[ns], CROSSOVER TIME
IBon = IBoff
VCC = 15V
VZ = 300V
LC = 200µH
tSTG[µs], STORAGE TIME
100
o
IC = 2A @ TJ=125 C
4
o
IC = 1A @ TJ=125 C
3
o
IC = 2A @ TJ=25 C
IBon = IBoff
VCC = 15V
VZ = 300V
LC = 200µH
o
IC = 2A @ TJ=125 C
1500
1000
o
IC = 1A @ TJ=125 C
o
IC = 2A @ TJ=25 C
500
o
IC = 1A @ TJ=25 C
2
0
5
10
o
IC = 1A @ TJ=25 C
15
0
20
hFE, FORCED GAIN
4
6
8
10
12
14
16
18
20
hFE, FORCED GAIN
Figure 11. Induction Storage Time
Figure 12. Inductive Crossover Time
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
2
www.fairchildsemi.com
5
KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
Typical Characteristics
(Continued)
1000
o
IC = 2A @ TJ=125 C
IC[A], COLLECTOR CURRENT
800
tF[ns], FALL TIME
100
IBon = IBoff
VCC = 15V
VZ = 300V
LC = 200µH
600
o
IC = 1A @ TJ=125 C
400
o
IC = 2A @ TJ=25 C
200
10
1µs
10µS
5ms
1ms
1
DC
0.1
o
IC = 1A @ TJ=25 C
0
2
4
6
8
10
12
14
16
18
0.01
10
20
100
hFE, FORCED GAIN
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 13. Inductive Fall Time
Figure 14. Safe Operating Area
8
100
6
PC[W], POWER DISSIPATION
Vcc = 50V
VBE(off) = -5V
LC = 1mH
Ic = 4 Ib
7
IC[A], COLLECTOR CURRENT
1000
5
4
-5V
3
2
75
50
25
1
0
200
300
400
500
600
700
800
900
1000
0
1100
25
50
75
100
125
150
175
O
TC[ C], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 15. Reverse Bias Safe Operating
VCE[V], COLLECTOR-EMITTER VOLTAGE
0
Figure 16. Power Derating
6
Vcc = 50V
VBE(off) = -5V
LC = 1mH
5
4
Ic = 5 Ib
Ic = 4 Ib
3
Ic = 3.3 Ib
2
Ic = 2.2 Ib
1
0
0
1
2
3
4
5
6
7
8
9
10
ICE[A], COLLECTOR CURRENT
Figure 17. RBSOA Saturation
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
www.fairchildsemi.com
6
KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
Typical Characteristics
KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
Physical Dimensions
TO-220
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
www.fairchildsemi.com
7
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Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
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