KSC815OBU

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSC815 NPN Epitaxial Silicon Transistor Features • Low Frequency Amplifier and High Frequency Oscillator • Collector-Base Voltage: VCBO = 60 V • Complement to KSA539 TO-92 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1. Emitter 2. Base 3. Collector • Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector) 12 3 Straight Lead Bulk Packing 1 2 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method KSC815YTA C815 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCBO Collector-Base Voltage Parameter 60 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C © 2002 Fairchild Semiconductor Corporation KSC815 Rev. 1.4 www.fairchildsemi.com KSC815 — NPN Epitaxial Silicon Transistor September 2015 Values are at TA = 25°C unless otherwise noted. Symbol PC RθJA Parameter Value Unit Collector Power Dissipation 400 mW Thermal Resistance, Junction-to-Ambient 310 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 65 V BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 45 V BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5 V ICBO Collector Cut-Off Current VCB = 45 V, IE = 0 0.1 μA IEBO Emitter Cut-Off Current VEB = 3 V, IC = 0 0.1 μA DC Current Gain VCE = 1 V, IC = 50 mA 40 VBE(on) Base-Emitter On Voltage VCE = 10 V, IC = 10 mA 0.60 VCE(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA fT Current Gain Bandwidth Product VCE = 10 V, IC = 10 mA Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz hFE Cob 100 400 0.65 0.90 V 0.15 0.40 V 0.83 1.10 V 200 MHz 4 pF hFE Classification Classification R O Y G hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 © 2002 Fairchild Semiconductor Corporation KSC815 Rev. 1.4 www.fairchildsemi.com 2 KSC815 — NPN Epitaxial Silicon Transistor Thermal Characteristics(1) 10000 100 IB = 300μA 80 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE=1V IB = 350μA 90 70 60 IB = 250μA 50 IB = 200μA IB = 150μA 40 30 IB = 100μA 20 1000 100 IB = 50μA 10 10 0 0 5 10 15 20 25 30 35 40 45 1 50 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 Figure 2. DC Current Gain 100 10 VCE=1V 1 IC[mA], COLLECTOR CURRENT IC=10IB VBE(sat) 0.1 VCE(sat) 10 1 0.1 0.0 0.01 1 10 100 f = 1MHz IE=0 Cob[pF], CAPACITANCE 10 1 100 VCB[V], COLLECTOR-BASE VOLTAGE 0.8 1.0 1.2 1000 VCE=10V 100 10 1 10 IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance © 2002 Fairchild Semiconductor Corporation KSC815 Rev. 1.4 0.6 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 10 0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT 1 0.2 Figure 6. Current Gain Bandwidth Product www.fairchildsemi.com 3 KSC815 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics KSC815 — NPN Epitaxial Silicon Transistor Physical Dimensions Figure 7. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type © 2002 Fairchild Semiconductor Corporation KSC815 Rev. 1.4 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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