KSC945OBU

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSC945 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier and High-Frequency OSC. • Complimentary to KSA733 • Collector-Base Voltage: VCBO = 60 V • High Current Gain Bandwidth Product: fT = 300 MHz (Tyical) • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number Top Mark Package Packing Method KSC945YBU C945 TO-92 3L Bulk KSC945YTA C945 TO-92 3L Ammo KSC945GTA C945 TO-92 3L Ammo KSC945CYTA C945 TO-92 3L Ammo KSC945CGBU C945 TO-92 3L Bulk KSC945CGTA C945 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit V VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V 150 mA IC Collector Current TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C © 2002 Fairchild Semiconductor Corporation KSC945 Rev. 1.1.0 www.fairchildsemi.com KSC945 — NPN Epitaxial Silicon Transistor November 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 250 mW Derate Above 25°C 2.0 mW/°C Thermal Resistance, Junction-to-Ambient 500 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 60 V BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 50 V BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5 V ICBO Collector Cut-Off Current VCB = 40 V, IE = 0 IEBO Emitter Cut-Off Current VEB = 3 V, IC = 0 hFE DC Current Gain VCE = 6 V, IC = 1.0 mA Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.15 Current Gain Bandwidth Product VCE = 6 V, IC = 10 mA 300 MHz Cob Output Capacitance VCB = 6 V, IE = 0, f = 1 MHz 2.5 pF NF Noise Figure VCE = 6 V, IC = 0.5 mA, f = 1 kHz, RS = 500 Ω 4.0 dB VCE(sat) fT 40 0.1 μA 0.1 μA 700 0.30 V hFE Classification Classification R O Y G L hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 © 2002 Fairchild Semiconductor Corporation KSC945 Rev. 1.1.0 www.fairchildsemi.com 2 KSC945 — NPN Epitaxial Silicon Transistor Thermal Characteristics(1) 100 100 VCE = 6V IB = 350μA IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB = 400μA 80 IB = 300μA IB = 250μA 60 IB = 200μA IB = 150μA 40 IB = 100μA 20 IB = 50μA 0 0 2 4 6 8 10 12 14 16 18 10 1 0.1 0.0 20 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 6V 100 10 100 1000 VBE(sat) 1 0.1 VCE(sat) 0.01 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Cob [pF], CAPACITANCE 10 100 1000 Figure 4. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage IE = 0 f = 1MHz 10 1 0.1 1000 VCB [V], COLLECTOR-BASE VOLTAGE 1000 VCE = 6V 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 5. Output Capacitance © 2002 Fairchild Semiconductor Corporation KSC945 Rev. 1.1.0 1.2 IC[mA], COLLECTOR CURRENT 100 100 1.0 IC = 10 IB 1 Figure 3. DC Current Gain 10 0.8 10 IC[mA], COLLECTOR CURRENT 1 0.6 Figure 2. Transfer Characteristic 1000 1 0.4 VBE[V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristic 10 0.2 Figure 6. Current Gain Bandwidth Product www.fairchildsemi.com 3 KSC945 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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