KSD1408GTU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. KSD1408 KSD1408 Power Amplifier Applications • Complement to KSB1017 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 80 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current 0.4 A PC Collector Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C 80 V 5 V 4 A Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC = 50mA, IB = 0 Min. 80 Typ. Max. Units V ICBO Collector Cut-off Current VCB = 80V, IE = 0 30 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 µA h FE1 hFE2 DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A VCE(sat) Collector-Emitter Saturation Voltage IC = 3A. IB = 0.3A 0.45 1.5 VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 3A 1 1.5 fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 8 MHz Cob Output Capacitance VCB = 10V, f = 1MHz 90 pF 40 15 240 50 V V hFE1 Classification Classification R O Y hFE1 40 ~ 80 70 ~ 140 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1408 Typical Characteristics 1000 IC[A], COLLECTOR CURRENT I B= A A 0m 60mA 0m 20 1 24 I B= I B= 1 IB= 20m VCE = 5V A IB 3.2 0m = 10 I B = 80 A mA hFE, DC CURRENT GAIN 4.0 IB = 60mA 2.4 IB = 40mA 1.6 IB = 20mA 0.8 IB = 0mA 0.0 0 1 2 3 4 100 10 1 0.001 5 0.01 VCE[V], COLLECTOR-EMITTER VOLTAGE 1 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 4 10 IC = 10 IB VCE = 5V IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE 0.1 1 0.1 0.01 0.001 0.01 0.1 1 3 2 1 0 0.0 10 0.4 IC[A], COLLECTOR CURRENT 0.8 1.2 1.6 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 35 100 PC[W], POWER DISSIPATION ICmax(pulse) 10 S 1m s 0m IC(max) m 10 10 S DC 1S 1 VCEOMAX IC[A], COLLECTOR CURRENT 30 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 20 15 10 5 0 0.1 1 25 1000 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSD1408 Package Demensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. 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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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