KSD1616AGBU

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Other names and brands may be claimed as the property of others. NPN Epitaxial Silicon Transistor KSD1616A Features • Audio Frequency Power Amplifier and Medium Speed Switching • Complement to KSB1116/KSB1116A • These are Pb−Free Devices www.onsemi.com ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Parameter Symbol Value Unit VCBO Collector−Base Voltage 120 V VCEO Collector−Emitter Voltage 60 V VEBO Emitter−Base Voltage 6 V IC Collector Current (DC) 1 A ICP Collector Current (Pulse) (Note 1) 2 A TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to 150 °C 1 1 2 3 TO−92−3 LF CASE 135AR 1. Emitter 2. Collector 3. Base 2 3 TO−92−3 CASE 135AN MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width ≤ 10 ms, duty cycle < 50%. AD1 616Ax YWW THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Parameter Max Unit Total Device Dissipation 0.75 W Derate Above 25_C 6 mW/°C Thermal Resistance, Junction−to−Ambient 160 °C/W Symbol PD RqJA 2. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. A D1616Ax Y WW ORDERING INFORMATION Device © Semiconductor Components Industries, LLC, 2002 July, 2021 − Rev. 2 1 = Assembly Location = Specific Device Code x = G or Y = Year of Production = Work Week Number Package Shipping KSD1616AGBU TO−92−3 (Pb−Free) 10,000 Units / Bulk Bag KSD1616AGTA TO−92−3 LF (Pb−Free) 2,000 Units / Fan−Fold KSD1616AYTA TO−92−3 LF (Pb−Free) 2,000 Units / Fan−Fold Publication Order Number: KSD1616A/D KSD1616A ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Conditions Min Typ Max Unit BVCBO Collector−Base Breakdown Voltage IC = 100 mA, IE = 0 120 − − V BVCEO Collector−Emitter Breakdown Voltage IC = 1 mA, IB = 0 60 − − V BVEBO Emitter−Base Breakdown Voltage IE = 100 mA, IC = 0 6 − − V ICBO Collector Cut−Off Current VCB = 60 V, IE = 0 − − 100 nA IEBO Emitter Cut−Off Current VEB = 6 V, IC = 0 − − 100 nA hFE1 DC Current Gain VCE = 2 V, IC = 100 mA 135 − 400 hFE2 DC Current Gain VCE = 2 V, IC = 1 A 81 − − VBE(on) Base−Emitter On Voltage (Note 3) VCE = 2 V, IC = 50 mA 600 640 700 mV VCE(sat) Collector−Emitter Saturation Voltage (Note 3) IC = 1 A, IB = 50 mA − 0.15 0.30 V VBE(sat) Base−Emitter Saturation Voltage (Note 3) IC = 1 A, IB = 50 mA − 0.9 1.2 V Output Capacitance VCE = 10 V, IE = 0, f = 1 MHz Current Gain Bandwidth Product VCE = 2 V, IC = 100 mA tON Turn−On Time tSTG Storage Time VCC = 10 V, IC = 100 mA, IB1 = −IB2 = 10 mA, VBE(off) = −2 V ~ −3 V Cob fT tF Fall Time − 19 − pF 100 160 − MHz − 0.07 − ms − 0.95 − ms − 0.07 − ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse test: pulse width < 350 ms, duty cycle ≤ 2% pulsed. hFE CLASSIFICATION Classification Y G hFE1 135 ~ 270 200 ~ 400 www.onsemi.com 2 KSD1616A TYPICAL PERFORMANCE CHARACTERISTICS IB = 4.5 mA IB = 4.0 mA IB = 5.0 mA 1.0 IB = 300 mA 80 IC, Collector Current (mA) IC, Collector Current (mA) 100 IB = 250 mA 60 IB = 200 mA 40 IB = 150 mA IB = 100 mA 20 IB = 50 mA 0 0 2 4 6 IB = 3.5 mA IB = 3.0 mA 0.8 IB = 2.5 mA 0.6 IB = 2.0 mA IB = 1.5 mA 0.4 IB = 1.0 mA 0.2 IB = 0.5 mA 8 0.0 10 0.0 Figure 1. Static Characteristic 0.6 0.8 1.0 10 VBE(sat), VCE(sat), Saturation Voltage (V) VCE = 2 V hFE, DC Current Gain 0.4 Figure 2. Static Characteristic 1000 100 10 1 0.01 0.1 1 IC = 20 IB VBE(sat) 1 0.1 VCE(sat) 0.01 0.01 10 IC, Collector Current (mA) 1000 0.1 1 10 IC, Collector Current (A) Figure 3. DC Current Gain Figure 4. Base−Emitter Saturation Voltage and Collector−Emitter Saturation Voltage 10 IE = 0 f = 1 MHz tON, tSTG, tF, Time (ms) Cob, Capacitance (pF) 0.2 VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) 100 10 VCC = −10 V IC = 10 IB1 = −10 IB2 1 tSTG tF 0.1 tON 1 1 10 100 0.01 −0.001 400 VCB, Collector−Base Voltage (V) −0.01 −0.1 IC, Collector Current (A) Figure 5. Collector Output Capacitance Figure 6. Switching Time www.onsemi.com 3 −1 KSD1616A TYPICAL CHARACTERISTICS (continued) 10 VCE = 2 V 10 ms IC, Collector Current (A) fT, Current Gain−Bandwidth Product (MHz) 1000 100 10 1 0.01 0.1 1 200 ms IC, Collector Current (mA) PC, Power Dissipation (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 25 50 75 100 125 150 10 Figure 8. Safe Operating Area 0.8 0 1 VCE, Collector−Emitter Voltage (V) Figure 7. Current Gain Bandwidth Product 0.0 DC 0.1 0.01 10 PW = 1 ms 1 175 200 TA, Ambient Temperature (5C) Figure 9. Power Derating www.onsemi.com 4 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.825x4.76 CASE 135AN ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13880G TO−92 3 4.825X4.76 DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative