KSD1616GBU

KSD1616GBU

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO92-3

  • 描述:

    KSD1616GBU

  • 数据手册
  • 价格&库存
KSD1616GBU 数据手册
KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : KSD1616 : KSD1616A Ratings 60 120 Units V V VCEO Collector-Emitter Voltage : KSD1616 : KSD1616A 50 60 V V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 1 A ICP * Collector Current (Pulse) 2 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * PW≤10ms, Duty Cycle < 50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB=60V, IE=0 IEBO Emitter Cut-off Current VEB=6V, IC=0 hFE1 DC Current Gain VCE=2V, IC=100mA : KSD1616 : KSD1616A Min. Typ. Max. 100 Units nA 100 nA VCE=2V, IC=1A 135 135 81 VBE (on) * Base-Emitter On Voltage VCE=2V, IC=50mA 600 640 700 mV VCE (sat) * Collector-Emitter Saturation Voltage IC=1A, IB=50mA 0.15 0.3 V VBE (sat) * Base-Emitter Saturation Voltage IC=1A, IB=50mA 0.9 1.2 Cob Output Capacitance VCE=10V, IE=0, f=1MHz 19 pF fT Current Gain Bandwidth Product VCE=2V, IC=100mA tON Turn On Time tSTG Storage Time tF Fall Time VCC=10V, IC=100mA IB1= -IB2=10mA VBE (off) = -2~-3V hFE2 100 600 400 V 160 MHz 0.07 μs 0.95 μs 0.07 μs * Pulse Test: PW
KSD1616GBU 价格&库存

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