KSD1621
NPN Epitaxial Silicon Transistor
Features
• High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity and Wide SOA
• Fast Switching Speed
• Complement to KSB1121
Marking
1
1 6
2 1
P Y
W W
SOT-89
Weekly code
Year code
hFE grade
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
V
VCBO
Collector-Base Voltage
30
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
2
A
PC
Collector Power Dissipation (TA = 25°C)
Derating Rate above 25°C
500
4
mW
mW/°C
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to +150
°C
2
Mounted on Ceramic Board (250mm x 0.8mm)
© 2009 Fairchild Semiconductor Corporation
KSD1621 Rev. B3
www.fairchildsemi.com
1
KSD1621 — NPN Epitaxial Silicon Transistor
August 2009
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 10μA, IE = 0
30
V
BVCEO
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0
25
V
BVEBO
Emitter-Base Breakdown Voltage
6
V
IE = 10μA, IC = 0
ICBO
Collector Cut-off Current
VCB = 20V, IE = 0
100
nA
IEBO
Emitter Cut-off Current
VBE = 4V, IC = 0
100
nA
hFE1
hFE2
DC Current Gain
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 1.5A
100
65
560
VCE (sat) Collector-Emitter Saturation Voltage
IC = 1.5A, IB = 75mA
0.18
0.4
V
VBE (sat) Base-Emitter Saturation Voltage
IC = 1.5A, IB = 75mA
0.85
1.2
V
Current Gain Bandwidth product
VCE = 10V, IC = 50mA
150
MHz
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
19
pF
tON
Turn On Time *
60
ns
tSTG
Storage Time *
VCC = 12V, VBE = 5V
IB1 = -IB2 = 25mA
IC = 0.5A, RL = 25Ω
fT
Fall Time *
tF
500
ns
25
ns
hFE Classification
Classification
R
S
T
U
hFE
100 ~ 200
140 ~ 280
200 ~ 400
280 ~ 560
Package Marking and Ordering Information
Device
Device Marking
Package
Reel Size
Tape Width
Quantity
KSD1621RTF
Line 1: 1621
Line 2: R&3
SOT-89
13”
--
4,000
KSD1621STF
Line 1: 1621
Line 2: S&3
SOT-89
13”
--
4,000
KSD1621TTF
Line 1: 1621
Line 2: T&3
SOT-89
13”
--
4,000
KSD1621UTF
Line 1: 1621
Line 2: U&3
SOT-89
13”
--
4,000
© 2009 Fairchild Semiconductor Corporation
KSD1621 Rev. B3
www.fairchildsemi.com
2
KSD1621 — NPN Epitaxial Silicon Transistor
Electrical Characteristics TA = 25°C unless otherwise noted
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1000
2.0
IB = 30mA
IB = 20mA
VCE= 2V
1.6
IB = 10mA
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB = 50mA
IB = 8mA
1.2
IB = 6mA
0.8
IB = 4mA
0.4
0.0
0.0
IB = 2mA
IB = 0
0.2
0.4
0.6
0.8
100
10
1
0.01
1.0
0.1
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
3.2
VCE = 2V
IC = 10 IB
2.8
IC[A], COLLECTOR CURRENT
VCE(sat)[V], SATURATION VOLTAGE
10
1
0.1
0.1
1
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0.0
10
1000
Cob[pF], CAPACITANCE
IE=0
f = 1MHz
100
10
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
0.6
0.8
1.0
1.2
1000
VCE = 10V
100
10
0.1
1
IC[A], COLLECTOR CURRENT
© 2009 Fairchild Semiconductor Corporation
KSD1621 Rev. B3
0.4
Figure 6. Current Gain Bandwidth Product
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 5. Collector Output Capacitance
1
0.2
VBE[V], BASE-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
1
0.1
10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
0.01
0.01
1
www.fairchildsemi.com
3
KSD1621 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Safe Operating Area
Figure 8. Power Derating
10
0.8
IC MAX. (Pulse)
s
PC[W], POWER DISSIPATION
s
1m
s
m
0m
10
IC[A], COLLECTOR CURRENT
10
IC MAX. (DC)
1
0.1
0.01
0.1
o
Ta=25 C
Single Pulse
Mounted on Ceramic Board
2
(250mm ? .8mm)
1
10
He
at
Si
nk
0.0
100
0
50
100
150
200
o
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ta[ C], AMBIENT TEMPERATURE
© 2009 Fairchild Semiconductor Corporation
KSD1621 Rev. B3
No
0.4
www.fairchildsemi.com
4
KSD1621 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
KSD1621 — NPN Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-89
1.50 ±0.20
4.50 ±0.20
(0.40)
4.10
(1.10)
2.50
±0.20
C0.2
±0.20
(0.50)
1.65 ±0.10
0.50 ±0.10
0.40 ±0.10
0.40 +0.10
–0.05
1.50 TYP 1.50 TYP
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
KSD1621 Rev. B3
www.fairchildsemi.com
5
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
