KSE13003H3ASTU

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSE13003 NPN Silicon Transistor High Voltage Switch Mode Applications • High Voltage Capability • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-126 1 1. Emitter Absolute Maximum Ratings* Symbol 2.Collector 3.Base T C = 25°C unless otherwise noted (notes_1) Parameter Value Units V CBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V V EBO Emitter-Base Voltage 9 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) 3 A IB Base Current PC Collector Dissipation (TC = 25°C) TJ Junction Temperature TSTG Storage Temperature Range 0.75 A 20 W 150 °C -65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES_1: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. hFE Classification Classification H1 H2 H3 hFE* 9 ~ 16 14~ 21 19 ~ 26 * Test on VCE = 2V, IC = 0.5A. © 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 www.fairchildsemi.com 1 KSE13003 — NPN Silicon Transistor March 2008 Symbol BVCEO IEBO TC = 25°C unless otherwise noted Parameter Conditions Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 Emitter Cut-off Current VEB = 9V, IC = 0 Min. Typ. Max 400 Units V 10 8 5 mA hFE *DC Current Gain VCE = 2V, IC = 0.5A VCE = 2V, IC =1A VCE(sat) *Collector Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A 0.5 1 3 V V V VBE(sat) *Base Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A 1 1.2 V V Cob Output Capacitance VCB = 10V , f = 0.1MHz fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A tON Turn On Time tSTG Storage Time tF Fall Time VCC =125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A RL = 125W 40 21 pF 4 MHz 1.1 ms 4.0 ms 0.7 ms * Pulse Test: Pulse Width=5ms, Duty Cycle£10% Package Marking and Ordering Information Device Item (notes_2) Device Marking KSE13003H1ASTU 1 E13003 Package Packing Method TO-126 TUBE KSE13003H2ASTU 2 E13003 TO-126 TUBE KSE13003H3ASTU 3 E13003 TO-126 TUBE Remarks Notes_2 : 1) The Affix “-H1/-H2/-H3” means the hFE classification. 2) The Sufix “-STU” means the TO126 short lead package and the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com © 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 www.fairchildsemi.com 2 KSE13003 — NPN Silicon Transistor Electrical Characteristics KSE13003 — NPN Silicon Transistor Typical Performance Characteristics 100 IB = 500mA IB = 450mA IB = 400mA 1.6 1.2 VCE = 2V IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA 0.8 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.0 IB = 50mA 0.4 IB = 0mA 0.0 0 1 2 3 4 10 1 0.1 0.01 5 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 Figure 2. DC current Gain 10 10 IC = 4 IB tSTG VBE(sat) 1 tSTG, tF[ms], TIME VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic 0.1 1 tF 0.1 VCE(sat) 0.01 0.01 0.1 1 0.01 0.1 10 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 30 10 ms 10 ICMAX. (pulse) PC[W], POWER DISSIPATION 1 25 s 0m 10 s 5m IC MAX. (DC) s 1m IC[A], COLLECTOR CURRENT 1 IC[A], COLLECTOR CURRENT 0.1 0.01 15 10 5 0 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating © 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 20 www.fairchildsemi.com 3 KSE13003 NPN Silicon Transistor © 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 www.fairchildsemi.com 4 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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