KSH122ITU

Description Features • • • • • • • Designed for general-purpose power and switching, such D-PAK for Surface Mount Applications as output or driver stages in applications. High DC Current Gain Built-in Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I ” Suffix) Electrically Similar to Popular TIP122 Complement to KSH127 Applications • Switching Regulators • Converters • Power Amplifiers Equivalent Circuit C B D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter R1 R1  8k R2  0.12k R2 E Ordering Information Part Number Top Mark Package Packing Method KSH122TF KSH122 TO-252 3L (DPAK) Tape and Reel KSH122TM KSH122 TO-252 3L (DPAK) Tape and Reel KSH122ITU KSH122-I TO-251 3L (IPAK) Rail © 1999 Semiconductor Components Industries, LLC. October-2017,Rev. 3 Publication Order Number: KSH122/D KSH122 / KSH122I — NPN Silicon Darlington Transistor KSH122 / KSH122I NPN Silicon Darlington Transistor Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A IB Base Current 120 mA PC Collector Dissipation (TC=25C) 20.00 Collector Dissipation (TA=25C) 1.75 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 to 150 C Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Collector-Emitter Sustaining VCEO(sus) Voltage(1) IC = 30 mA, IB = 0 Min. Typ. Max. 100 Unit V A ICEO Collector Cut-Off Current VCE = 50 V, IB =0 10 ICBO Collector Cut-Off Current VCB = 100 V, IE = 0 10 A IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 2 mA hFE DC Current Gain(1) VCE = 4 V, IC = 4 A 1000 VCE = 4 V, IC = 8 A 100 12000 IC = 4 A, IB = 16 mA 2 VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 8 A, IB = 80 mA 4 VBE(sat) Base-Emitter Saturation Voltage(1) IC = 8 A, IB = 80 mA 4.5 VBE(on) Cob (1) V V Base-Emitter On Voltage VCE = 4 V, IC = 4 A 2.8 V Output Capacitance VCB = 10 V, IE = 0, f = 0.1 MHz 200 pF Note: 1. Pulse test: pw300 s, duty cycle 2%. www.onsemi.com 2 KSH122 / KSH122I — NPN Silicon Darlington Transistor Absolute Maximum Ratings VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10k hFE, DC CURRENT GAIN VCE = 4V 1k 100 0.1 1 10 10 IC = 250 IB VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 IC[A], COLLECTOR CURRENT 1 10 100 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 tR,tD[s], TURN ON TIME Cob[pF], CAPACITANCE VCC= 30V IC=250IB IB1=-IB2 100 10 1 0.1 1 10 1 tR tD, VBE(off)=0 0.1 0.01 0.1 100 VCB[V], COLLECTOR-BASE VOLTAGE 1 10 IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn-On Time 100 10 IC[A], COLLECTOR CURRENT tSTG,tF[s], TURN OFF TIME VCC=30V IC=250IB tSTG 1 0.1 0.1 tF 10 0 s 50 0 s 10 1m 5m s DC s 1 0.1 0.01 1 1 10 10 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Turn-Off Time Figure 6. Safe Operating Area www.onsemi.com 3 1000 KSH122 / KSH122I — NPN Silicon Darlington Transistor Typical Performance Characteristics PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating www.onsemi.com 4 KSH122 / KSH122I — NPN Silicon Darlington Transistor Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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