KSH42C
KSH42C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP42C
D-PAK
1
1.Base
I-PAK
1
2.Collector
3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Value
-100
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
Collector Current (Pulse)
Units
V
-100
V
-5
V
-6
A
-10
A
IB
Base Current
-2
A
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
Test Condition
IC = - 30mA, IB = 0
ICEO
Collector Cut-off Current
ICES
Collector Cut-off Current
IEBO
Min.
-100
Max.
Units
V
VCE = -60V, IB = 0
-50
µA
VCE = -100V, VBE = 0
-10
µA
Emitter Cut-off Current
VBE = -5V, IC = 0
-0.5
mA
hFE
* DC Current Gain
VCE = -4V, IC = -0.3A
VCE = -4V, IC = -3A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = -6A, IB = -600mA
VBE(on)
* Base-Emitter On Voltage
VCE = -6A, IC = -4A
fT
Current Gain Bandwidth Product
VCE = -10V, IC = -500mA
30
15
3
75
-1.5
V
-2
V
MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Semiconductor Components Industries, LLC.
October-2017,Rev. 1
Publication Order Number:
KSH42C/D
KSH42C
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000
hFE, DC CURRENT GAIN
VCE = -2V
100
10
1
-0.01
-0.1
-1
-10
-10
IC = 10 IB
-1
V BE(sat)
-0.1
VCE(sat)
-0.01
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
tR, tD [µs], TURN ON TIME
Cob[pF], CAPACITANCE
1000
100
10
V CC = -30V
IC = 10.IB
1
tR
0.1
tD VBE(off)=-5V
1
-0.1
0.01
-0.01
-1
-10
-0.1
-10
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Capacitance
Figure 4. Turn On Time
10
-100
V CC = -30V
IC = 10.IB
tSTG
1
tF
0.1
0.01
-0.01
IC[A], COLLECTOR CURRENT
tSTG,tF [µ s], TURN OFF TIME
-1
-100
-0.1
-1
-10
ICP(max)
-10
10
1m
IC(max)
5m
-1
50
s
0µ
0µ
s
s
s
DC
-0.1
-0.01
-1
IC[A], COLLECTOR CURRENT
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
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2
-1000
KSH42C
Typical Characteristics (Continued)
PC[W], POWER DISSIPATION
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
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3
KSH42C
Package Dimensions
D-PAK
MIN0.55
0.91 ±0.10
0.50 ±0.10
0.89 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(1.00)
(3.05)
(2XR0.25)
(0.10)
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.70)
2.30 ±0.20
(0.90)
6.10 ±0.20
2.70 ±0.20
2.30 ±0.10
0.76 ±0.10
6.10 ±0.20
2.30TYP
[2.30±0.20]
(0.50)
2.70 ±0.20
MAX0.96
(4.34)
9.50 ±0.30
0.80 ±0.20
0.60 ±0.20
(0.50)
9.50 ±0.30
5.34 ±0.30
0.70 ±0.20
6.60 ±0.20
0.76 ±0.10
Dimensions in Millimeters
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4
KSH42C
Package Dimensions (Continued)
I-PAK
2.30 ±0.20
6.60 ±0.20
5.34 ±0.20
2.30TYP
[2.30±0.20]
±0.20
±0.30
16.10
±0.20
±0.30
9.30
0.76 ±0.10
1.80
0.80
MAX0.96
0.50 ±0.10
6.10
±0.20
(0.50)
0.70
(4.34)
±0.10
0.60
±0.20
(0.50)
2.30TYP
[2.30±0.20]
0.50 ±0.10
Dimensions in Millimeters
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5
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