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KSH44H11 / KSH44H11I
NPN Epitaxial Silicon Transistor
Features
Description
•
•
•
•
•
Designed for general-purpose power and switching, such
as output or driver stages in applications.
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular KSE44H
Fast Switching Speeds
Low Collector-Emitter Saturation Voltage
Applications
• Switching Regulators
• Converters
• Power Amplifiers
D-PAK
1
1.Base
I-PAK
1
2.Collector
3.Emitter
Ordering Information
Part Number
Top Mark
Package
Packing Method
KSH44H11TF
KSH44H11
TO-252 3L (DPAK)
Tape and Reel
KSH44H11TM
KSH44H11
TO-252 3L (DPAK)
Tape and Reel
KSH44H11ITU
KSH44H11-I
TO-251 3L (IPAK)
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
8
A
ICP
Collector Current (Pulse)
16
A
PC
Collector Dissipation (TC = 25°C)
20.00
Collector Dissipation (TA = 25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 to +150
°C
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 2.6
www.fairchildsemi.com
1
KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor
April 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO(sus)
Parameter
Conditions
(1)
Min.
Typ.
Max.
Unit
Collector-Emitter Sustaining Voltage
IC = 30 mA, IB = 0
ICEO
Collector Cut-Off Current
VCE = 80 V, IB = 0
10
μA
IEBO
Emitter Cut-Off Current
VEB = 5 V, IC = 0
50
μA
hFE
DC Current Gain
1
V
VCE(sat)
Collector-Emitter Saturation Voltage
80
VCE = 1 V, IC = 2 A
60
VCE = 1 V, IC = 4 A
40
V
IC = 8 A, IB = 0.4 A
VBE(sat)
Base-Emitter Saturation Voltage
IC = 8 A, IB = 0.8 A
fT
Current Gain Bandwidth Product
VCE = 10 V, IC = 0.5 A
50
MHz
Cob
Output Capacitance
VCB = 10 V, f = 1 MHz
130
pF
tON
Turn-On Time
300
ns
tSTG
Storage Time
500
ns
140
ns
tF
Fall Time
IC = 5 A,
IB1 = - IB2 = 0.5 A
1.5
V
Note:
1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 2.6
www.fairchildsemi.com
2
KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor
Electrical Characteristics
100
1000
IC[A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
VCE = 1V
100
10
ICP(max)
10
0μ
s
50
0μ
s
10
IC(max)
1m
s
5m
s
DC
1
0.1
0.01
1
0.01
0.1
1
1
10
IC[A], COLLECTOR CURRENT
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. DC Current Gain
Figure 2. Safe Operating Area
PC[W], POWER DISSIPATION
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 3. Power Derating
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 2.6
www.fairchildsemi.com
3
KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
0.10 B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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