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KSH45H11
PNP Epitaxial Silicon Transistor
Features
Description
•
•
•
•
•
General-purpose power and switching such as output or
driver stages in applications D-PAK for surface mount
applications.
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular KSE45H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
Applications
• Switching Regulators
• Converters
• Power Amplifiers
D-PAK
1
1.Base
I-PAK
1
2.Collector
3.Emitter
Ordering Information
Part Number
Top Mark
Package
Packing Method
KSH45H11TF
KSH45H11
TO-252 3L (DPAK)
Tape and Reel
KSH45H11TM
KSH45H11
TO-252 3L (DPAK)
Tape and Reel
KSH45H11ITU
KSH45H11-I
TO-251 3L (IPAK)
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VCEO
Collector-Emitter Voltage
Parameter
- 80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-8
A
ICP
Collector Current (Pulse)
- 16
A
Collector Dissipation (TC = 25°C)
20
Collector Dissipation (TA = 25°C)
1.75
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 to +150
°C
PC
© 2002 Fairchild Semiconductor Corporation
KSH45H11 Rev. 2.7
W
www.fairchildsemi.com
1
KSH45H11 — PNP Epitaxial Silicon Transistor
April 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO(sus)
Parameter
Conditions
Min.
- 80
Typ.
Max.
Unit
Collector-Emitter Sustaining Voltage
IC = - 30 mA, IB = 0
ICEO
Collector Cut-Off Current
VCE = - 80 V, IB = 0
- 10
μA
IEBO
Emitter Cut-Off Current
VEB = - 5 V, IC = 0
- 50
μA
hFE
DC Current Gain
-1
V
VCE(sat)
Collector-Emitter Saturation Voltage
VCE = - 1 V, IC = - 2 A
60
VCE = - 1 V, IC = - 4 A
40
V
IC = - 8 A, IB = - 0.4 A
VBE(sat)
Base-Emitter Saturation Voltage
IC = - 8 A, IB = - 0.8 A
fT
Current Gain Bandwidth Product
VCE = - 10 V, IC = - 0.5 A
40
MHz
Cob
Collector Capacitance
VCB = - 10 V, f = 1 MHz
230
pF
tON
Turn-On Time
135
ns
tSTG
Storage Time
500
ns
100
ns
tF
Fall Time
IC = - 5 A,
IB1 = - IB2 = - 0.5 A
- 1.5
V
Note:
1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
© 2002 Fairchild Semiconductor Corporation
KSH45H11 Rev. 2.7
www.fairchildsemi.com
2
KSH45H11 — PNP Epitaxial Silicon Transistor
Electrical Characteristics(1)
-100
1000
IC[A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
VCE = -1V
100
10
ICP(max)
10
0μ
s
50
0μ
s
-10
IC(max)
1m
s
5m
s
DC
-1
-0.1
-0.01
1
-0.01
-0.1
-1
-1
-10
IC[A], COLLECTOR CURRENT
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. DC Current Gain
Figure 2. Safe Operating Area
PC[W], POWER DISSIPATION
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 3. Power Derating
© 2002 Fairchild Semiconductor Corporation
KSH45H11 Rev. 2.7
www.fairchildsemi.com
3
KSH45H11 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
KSH45H11 — PNP Epitaxial Silicon Transistor
Physical Dimensions
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