LA733P

LA733P, LA733Q Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg –55 to +150 Watts mW/°C °C 1 2 3 TO–92 CASE 29 STYLE 14 mW mW/°C Value –48 –60 –5.0 –100 Unit Vdc Vdc Vdc mAdc 1 EMITTER 3 BASE COLLECTOR 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RθJA RθJC Max 200 83.3 Unit °C/W °C/W MARKING DIAGRAMS LA 733x YWW LA733x x Y WW = Specific Device Code = P or Q = Year = Work Week ORDERING INFORMATION Device LA733P LA733Q Package TO–92 TO–92 Shipping 5000 Units/Box 5000 Units/Box © Semiconductor Components Industries, LLC, 2001 1 August, 2001 – Rev. 1 Publication Order Number: LA733P/D LA733P, LA733Q ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector–Base Leakage Current (VCB = –60 V) Emitter–Base Leakage Current (VEB = –5.0 V, IC = 0) Collector–Emitter Leakage Current (VCE = –50 V) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO Min –48 –60 –5.0 – – – Typ – – – – – – Max – – – –100 –100 –1.0 Unit Vdc Vdc Vdc nAdc nAdc mA ON CHARACTERISTICS DC Current Gain (IC = –1.0 mAdc, VCE = –6.0 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) Base–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) Base–Emitter On Voltage (IC = –1.0 mAdc, VCE = –6.0 Vdc) hFE LA733P LA733Q VCE(sat) VBE(sat) VBE(on) 200 135 – – –0.55 – – – – – 400 270 –0.3 –0.9 –0.68 Vdc Vdc Vdc – DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –10 mAdc, VCE = –6.0 Vdc, f = 20 MHz) Common–Base Output Capacitance (VCB = –60 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = –0.3 mAdc, VCE = –6.0 Vdc, RG = 10 kW, f = 100 mHz) fT Cob NF 100 – – – – – 450 7.0 18 MHz pF dB http://onsemi.com 2 LA733P, LA733Q 2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25°C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V 0.3 Figure 1. Normalized DC Current Gain BANDWIDTH PRODUCT (MHz) Figure 2. “Saturation” and “On” Voltages 400 300 C, CAPACITANCE (pF) 200 150 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) -50 VCE = -10 V TA = 25°C 10 7.0 5.0 Cib TA = 25°C 3.0 2.0 Cob f T, CURRENT-GAIN 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) -20 -30 -40 Figure 3. Current–Gain — Bandwidth Product Figure 4. Capacitances 0.5 0.3 VCE = -10 V f = 1.0 kHz TA = 25°C r b′, BASE SPREADING RESISTANCE (OHMS) 1.0 hob, OUTPUT ADMITTANCE (OHMS) 150 140 130 120 110 100 -0.1 VCE = -10 V f = 1.0 kHz TA = 25°C 0.1 0.05 0.03 0.01 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -10 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -10 Figure 5. Output Admittance Figure 6. Base Spreading Resistance http://onsemi.com 3 LA733P, LA733Q PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X–X N N DIM A B C D G H J K L N P R V STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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