LB11697V-W-AH

LB11697V Monolithic Digital IC Direct PWM Drive Brushless Motor Predriver IC http://onsemi.com Overview The LB11697V is a direct PWM drive predriver IC designed for three-phase power brushless motors. A motor driver circuit with the desired output power (voltage and current) can be implemented by adding discrete transistors in the output circuits. Furthermore, the LB11697V provides a full complement of protection circuits allowing it to easily implement high-reliability drive circuits. Note that the LB11697V is a modified version of the LB11696V in which the output logic has been optimized for 12 V system motors. This allows the number of external components to be reduced in application circuits. Features  Three-phase bipolar drive  Direct PWM drive (controlled either by control voltage or PWM variable duty pulse input)  Built-in forward/reverse switching circuit  Start/stop mode switching circuit (stop mode power saving function)  Built-in input amplifier  5 V regulator output (VREG pin)  Current limiter circuit (Supports 0.25 V (typical) reference voltage sensing based high-precision detection)  Undervoltage protection circuit (The operating voltage can be set with a zener diode)  Automatic recovery type constraint protection circuit with protection operating state discrimination output (RD pin)  Four types of Hall signal pulse outputs  Supports thermistor based thermal protection of the output transistors SSOP30 (275 mil) ORDERING INFORMATION See detailed ordering and shipping information on page 16 of this data sheet. © Semiconductor Components Industries, LLC, 2017 August 2017 - Rev. 1 1 Publication Order Number : LB11697V/D LB11697V Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Supply voltage 1 Output current Symbol VCC max IO max Conditions Ratings Unit VCC pin 18 V UL, VL, WL, UH, VH, and WH pins 30 mA LVS pin applied voltage LVS max LVS pin Allowable power dissipation 1 Pd max1 Independent IC Allowable power dissipation 2 Pd max2 Circuit board* 18 V 0.45 W 1.05 W Operating temperature Topr –20 to +100 °C Storage temperature Tstg –55 to +150 °C * When mounted on a 114.3  76.1  1.6 mm glass epoxy board Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Allowable Operating Ranges at Ta = 25°C Parameter Symbol Conditions Supply voltage range 1-1 VCC1-1 VCC pin Supply voltage range 1-2 VCC1-2 VCC pin, when VCC is shorted to VREG. Output current IO UL, VL, WL, UH, VH, and WH pins Ratings Unit 8 to 17 V 4.5 to 5.5 V 25 mA 5 V constant voltage output current IREG –30 mA HP pin applied voltage VHP 0 to 17 V HP pin output current IHP 0 to 15 mA RD pin applied voltage VRD 0 to 17 V RD pin output current IRD 0 to 15 mA Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 LB11697V Electrical Characteristics at Ta = 25°C, VCC = 12 V Parameter Symbol Current drain 1 ICC1 Current drain 2 ICC2 Conditions Ratings min typ Stop mode Unit max 12 16 mA 2.5 4 mA 5 V Constant Voltage Output (VREG pin) Output voltage VREG Line regulation VREG1 4.7 VCC = 8 to 17 V 5.0 5.3 V 40 100 mV 30 Load regulation VREG2 IO = –5 to –20 mA 5 Temperature coefficient VREG3 Design target value* 0 Output voltage 1-1 VOUT1-1 UH, VH, and WH at the low level, IO = 400 μA 0.2 0.5 V Output voltage 1-2 VOUT1-2 UH, VH, and WH at the low level, IO = 10 mA 0.9 1.2 V VCC – 1.1 VCC – 0.9 mV mV/°C Output Block Output voltage 2 VOUT2 UH, VH, and WH at the High level, IO = –20 mA Output voltage 3 VOUT3 UL, VL, and WH at the low level, IO = 20 mA Output leakage current IOleak V 0.3 V 10 μA Hall Amplifier Block Input bias current Common-mode input voltage range 1 Common-mode input voltage range 2 IHB (HA) –2 VICM1 When a Hall effect device is used VICM2 Single-sided input bias mode (when a Hall IC is used) Hall Input Sensitivity –0.5 μA 0.5 VCC – 2.0 V 0 VCC V 80 mVp-p Hysteresis VIN (HA) 15 24 40 mV Input voltage low  high VSLH (HA) 5 12 20 mV Input voltage high  low VSHL (HA) –20 –12 –5 mV VIO (CTL) –10 10 mV IB (CTL) –1 1 μA VICM 0 VREG – 1.7 V 1.05 V CTL Amplifier Input offset voltage Input bias current Common-mode input voltage range High-level output voltage VOH (CTL) ITOC = –0.2 mA Low-level output voltage VOL (CTL) ITOC = 0.2 mA G (CTL) f (CTL) = 1 kHz Open-loop gain VREG – 1.2 VREG – 0.8 0.8 45 V 51 dB PWM Oscillator (PWM pin) High-level output voltage VOH (PWM) 2.75 3.0 3.25 V Low-level output voltage VOL (PWM) 1.2 1.35 1.5 V –120 –90 –65 External capacitor charge current ICHG Oscillator frequency f (PWM) Amplitude V (PWM) VPWM = 2.1 V C = 2000 pF 22 1.4 1.6 μA kHz 1.9 Vp-p Continued on next page. Note:*Design target value. These items are not tested. www.onsemi.com 3 LB11697V Continued from preceding page. Parameter Symbol Conditions Ratings min typ Unit max TOC pin Input voltage 1 VTOC1 Output duty: 100% Input voltage 2 VTOC2 Output duty: 0% 2.68 3.0 3.34 1.2 1.35 1.5 Input voltage 1 low VTOC1L Input voltage 2 low Input voltage 1 high Input voltage 2 high VTOC2H V V Design target value*, when VREG = 4.7 V, 100% 2.68 2.82 2.96 V VTOC2L Design target value*, when VREG = 4.7 V, 0% 1.23 1.29 1.34 V VTOC1H Design target value*, when VREG = 5.3 V, 100% 3.02 3.18 3.34 V Design target value*, when VREG = 5.3 V, 0% 1.37 1.44 1.50 0.2 0.5 V 10 μA HP Pin Output saturation voltage Output leakage current VHPL IO = 10 mA IHPleak VO = 18 V CSD Oscillator (CSD pin) High-level output voltage VOH (CSD) 2.7 3.0 3.3 V Low-level output voltage VOL (CSD) 0.7 1.0 1.3 V External capacitor charge current ICHG1 VCSD = 2 V –3.15 –2.5 –1.85 μA External capacitor discharge current ICHG2 VCSD = 2 V 0.1 0.14 0.18 μA Charge/discharge current ratio RCSD (Charge current)/(discharge current) 15 18 21 Low-level output voltage VRDL IO = 10 mA 0.2 0.5 V Output leakage current IL (RD) VO = 18 V 10 μA 0.275 V V times RD Pin Current Limiter Circuit (RF pin) Limiter voltage VRF RF-RFGND 0.225 0.25 Undervoltage Protection Circuit (LVS pin) Operating voltage VSDL 3.5 3.7 3.9 Release voltage VSDH 3.95 4.15 4.35 V Hysteresis VSD 0.3 0.45 0.6 V 50 kHz PWMIN Pin Input frequency f (PI) High-level input voltage VIH (PI) 2.0 VREG V Low-level input voltage VIL (PI) 0 1.0 V Input open voltage VIO (PI) VREG – 0.5 Hysteresis VIS (PI) 0.2 High-level input current IIH (PI) VPWMIN = VREG Low-level input current IIL (PI) VPWMIN = 0 V VREG V 0.25 0.4 V –10 0 +10 μA –130 –90 μA S/S Pin High-level input voltage VIH (SS) 2.0 VREG V Low-level input voltage VIL (SS) 0 1.0 V Hysteresis VIS (SS) 0.2 0.25 0.4 V High-level input current IIH (SS) VS/S = VREG –10 0 +10 μA Low-level input current IIL (SS) VS/S = 0 V –10 –1 μA F/R Pin High-level input voltage VIH (FR) 2.0 VREG V Low-level input voltage VIL (FR) 0 1.0 V Input open voltage VIO (FR) VREG – 0.5 Hysteresis VIS (FR) 0.2 High-level input current IIH (FR) VF/R = VREG Low-level input current IIL (FR) VF/R = 0 V VREG V 0.25 0.4 V –10 0 +10 μA –130 –90 μA N1 Pin High-level input voltage VIH (N1) 2.0 VREG V Low-level input voltage VIL (N1) 0 1.0 V Input open voltage VIO (N1) High-level input current IIH (N1) VN1 = VREG Low-level input current IIL (N1) VN1 = 0 V VREG – 0.5 –10 0 –130 –100 VREG V +10 μA μA N2 Pin High-level input voltage VIH (N2) 2.0 VREG V Low-level input voltage VIL (N2) 0 1.0 V Input open voltage VIO (N2) High-level input current IIH (N2) VN2 = VREG Low-level input current IIL (N2) VN2 = 0 V VREG – 0.5 –10 0 –130 –100 VREG V +10 μA μA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 LB11697V Package Dimensions unit : mm SSOP30 (275mil) CASE 565AT ISSUE A (Unit: mm) 1.00 SOLDERING FOOTPRINT* 7.00 GENERIC MARKING DIAGRAM* 0.65 XXXXXXXXXX YMDDD XXXXX = Specific Device Code Y = Year M = Month DDD = Additional Traceability Data 0.32 NOTE: The measurements are not to guarantee but for reference only. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. LB11697V Pd max — Ta Allowable power dissipation, Pdmax — W 0.6 0.5 0.4 0.3 0.28 0.2 0.1 0 --20 0 20 40 60 80 100 Ambient temperature, Ta — C Truth Table •Three-Phase Logic Truth Table (“IN = ‘H’” indicates the state where IN+ > IN–.) F/R = L F/R = H Output IN1 IN2 IN3 IN1 IN2 IN3 Source Sink 1 H L H L H L VH UL 2 H L L L H H WH UL 3 H H L L L H WH VL 4 L H L H L H UH VL 5 L H H H L L UH WL 6 L L H H H L VH WL •S/S Pin •PWMIN Pin Input state State Input state State H Stop High or open Output off L Start L Output on •N1 and N2 Pins Input state N1 pin N2 pin L L HP output Single Hall sensor period divided by 2 L High or open Single Hall sensor period High or open L Three Hall sensor synthesized period divided by 2 High or open High or open Three Hall sensor synthesized period Since the S/S pin does not have an internal pull-up resistor, an external pull-up resistor or equivalent is required to set the IC to the stop state. If either the S/S or PWMIN pins are not used, the unused pin input must be set to the low-level voltage. The HP output can be selected (by the N1 and N2 settings) to be one of the following four functions: the IN1 Hall input converted to a pulse output (one-Hall output), the one-Hall output divided by two, the three-phase output synthesized from the Hall inputs (three-Hall synthesized output) or the three-Hall synthesized output divided by two. www.onsemi.com 6 LB11697V Pin Assignment VCC VREG LVS N2 N1 HP F/R PWMIN S/S 30 27 26 25 24 29 28 23 22 CSD RD PWM TOC 21 20 19 11 12 EI– EI+ 18 17 16 13 14 15 LB11697V 1 2 3 GND RFGND RF 4 5 6 7 8 9 10 WH WL VH VL UH UL IN1– IN1+ IN2– IN2+ IN3– IN3+ Top view Pin Functions Pin No. Symbol 1 GND Pin Description Equivalent circuit Ground VREG 2 RF GND Output current detection reference Connect the ground terminal of the external resistor RF to this pin. 2 VREG 3 RF Output current detection Connect a resistor with a small value between this pin and RFGND. This sets the maximum output current IOUT to be 0.25/Rf. 3 VCC 4 6 8 WH VH UH Outputs (External transistor drive outputs) These are the PWM outputs used for duty control. 4 These are push-pull outputs. 6 8 50 k Continued on next page. www.onsemi.com 7 LB11697V Continued from preceding page. Pin No. Pin Name Pin Description Equivalent circuit VCC 5 7 9 WL VL UL Outputs (External transistor drive outputs) These are open-collector outputs. 5 7 9 VCC 10 11 12 13 14 15 IN1– IN1+ IN2– IN2+ IN3– IN3+ Hall sensor inputs A high-level state is recognized when IN+ > IN–, and a low-level state is recognized under the reverse condition. If noise on the Hall sensor signals becomes a problem, insert capacitors between the IN+ and IN– inputs. 11 13 15 300  300  10 12 14 VCC 16 17 EI+ EI– Control amplifier inputs The PWMIN pin must be held at the low level for control using this pin to function. 300  300  17 16 VREG 18 TOC Control amplifier output When the TOC pin voltage rises, the IC changes the UH, VH, and WH output signal PWM duty to increase the torque output. 18 300  40 k VREG 19 PWM Shared function pin: PWM oscillator frequency setting and initial reset pulse generation Insert a capacitor between this pin and ground. A capacitor of 2000 pF sets a frequency of about 22 kHz. 200  19 2 k Continued on next page. www.onsemi.com 8 LB11697V Continued from preceding page. Pin No. Pin Name Pin Description Equivalent circuit VREG 20 RD 20 Motor constraint detection output This pin output is on when the motor is turning and off when the constraint protection circuit operates. VREG 21 CSD Constraint protection circuit operating time setting Insert a capacitor between this pin and ground. This pin must be connected to ground if the constraint protection circuit is not used. 300  21 VREG 22 S/S Start/Stop input A low-level input sets the IC to start mode, and a highlevel input sets it to stop mode. 3.5 k 22 VREG 50 k 23 PWM IN PWM pulse input A low-level input specifies the output drive state, and a high-level or open input specifies the output off state. When this pin is used for control, the TOC pin voltage must be set to a control amplifier input that results in a 100% duty. 3.5 k 23 VREG 50 k 3.5 k 24 F/R Forward/reverse input 24 Continued on next page. www.onsemi.com 9 LB11697V Continued from preceding page. Pin No. Pin Name Pin Description Equivalent circuit VREG 25 HP 25 Hall signal output One of four output types is selected by the N1 and N2 pin settings. VREG 50 k 300  26 N1 Hall signal output (HP signal) type selector 26 VREG 50 k 27 N2 300  Hall signal output (HP signal) type selector 27 VCC 28 28 LVS Undervoltage protection voltage detection If a 5 V or higher supply voltage is to be detected, set the detection voltage by inserting an appropriate zener diode in series. VCC 29 VREG Stabilized power supply output (5 V output) Insert a capacitor (about 0.1 μF) between this pin and ground for stabilization. 30 VCC Power supply. Insert a capacitor between this pin and ground for stabilization. www.onsemi.com 10 29 LB11697V Hall Sensor Signal Input/Output Timing Chart F/R = L IN1 IN2 IN3 UH VH WH UL VL WL F/R = H IN1 IN2 IN3 UH VH WH UL VL WL Areas shown in gray ( ) indicate PWM output. www.onsemi.com 11 CTL www.onsemi.com 12 VREG HP VREG PWMIN PWM EI+ EI– TOC S/S S/S VREF PWM IN PWM OSC + – F/R F/R N1 N1 COMP N2 N2 HP LOGIC LVSD HYS AMP HALL HALL LOGIC CONTROL LOGIC CSD OSC CSD VCC IN1+ IN1– IN2+ IN2– IN3+ IN3– RD RD VREG GND CURR LIM PRI DRIVER VREG RFGND RF WH WL VH VL UH UL VCC VREG LVS 12 V VM(12V) LB11697V Application Circuit Examples MOS transistor drive (low side PWM) using a 12 V power supply LB11697V LB11697V Functional Description 1. Output Drive Circuit The LB11697V adopts direct PWM drive to minimize power loss in the outputs. The output transistors are always saturated when on, and the motor drive power is adjusted by changing the on duty of the output. The output PWM switching is performed on the UH, VH, and WH outputs. The output PWM switching is performed using the UH, VH, and WH outputs, which are external low side transistor drive outputs. Since the reverse recovery time for the diodes connected to the non-PWM side outputs can be a problem, care is required in selecting these diodes. (If diodes with a short reverse recovery time are not used, through currents will flow at the instant the PWM side transistors are turned on.) 2. Current Limiter Circuit The current limiter circuit limits the output current peak value to a level To the RF pin Current determined by the equation I = VFR/Rf (VRF = 0.25 V typical, Rf: detection current detection resistor). This circuit suppresses the output current by resistor reducing the output on duty. High-precision detection can be implemented by connecting the lines from the RF and RFGND pins close to the two terminal of the current detection resistor Rf. The current limiter circuit includes an internal filter circuit to prevent incorrect current limiter circuit operation due to detecting the output diode reverse recovery current due to PWM operation. Although there should be no problems with the internal filter circuit in normal applications, applications should add an external filter circuit (such as an RC low-pass filter) if incorrect operation occurs (if the diode reverse recovery current flows for longer than 1 μs). 3. Power Saving Circuit This IC goes to a low-power mode (power saving state) when set to the stop state with the S/S pin. In the power saving state, the bias currents in most of the circuits are cut off. However, the 5 V regulator output (VREG) is still provided in the power saving state. If it is also necessary to cut the Hall device bias current, this function can be provided by an application that, for example, connects the Hall devices to 5 V through PNP transistors. To the VREG pin To the S/S pin Hall device 4. Notes on the PWM Frequency The PWM frequency is determined by the capacitor C (F) connected to the PWM pin. fPWM  1/(22500  C) If a 2000 pF capacitor is used, the circuit will oscillate at about 22 kHz. If the PWM frequency is too low, switching noise will be audible from the motor, and if it is too high, the output power loss will increase. Thus a frequency in the range 15 to 50 kHz must be used. The capacitor's ground terminal must be placed as close as possible to the IC’s ground pin to minimize the influence of output noise and other noise sources. 5. Control Methods The output duty can be controlled by either of the following methods • Control based on comparing the TOC pin voltage to the PWM oscillator waveform The low side output transistor duty is determined according to the result of comparing the TOC pin voltage to the PWM oscillator waveform. When the TOC pin voltage is 1.4 V or lower, the duty will be 0%, and when it is 3.0 V or higher, the duty will be 100%. Since the TOC pin is the output of the control amplifier (CTL), a control voltage cannot be directly input to the TOC pin. Normally, the control amplifier is used as a full feedback amplifier (with the EI- pin connected to the TOC pin) and a DC voltage is input to the EI+ pin (the EI+ pin voltage will become equal to the TOC pin voltage). When the EI+ pin voltage becomes higher, the output duty increases. Since the motor will be driven when the EI+ pin is in the open state, a pull-down resistor must be connected to the EI+ pin if the motor should not operate when EI+ is open. When TOC pin voltage control is used, a low-level input must be applied to the PWMIN pin or that pin connected to ground. www.onsemi.com 13 LB11697V • Pulse Control Using the PWMIN Pin A pulse signal can be input to the PWMIN pin, and the output can be To the PWMIN pin controlled based on the duty of that signal. Note that the output is on when a low level is input to the PWMIN pin, and off when a high level is input. When the PWMIN pin is open it goes to the high level and the output is turned off. If inverted input logic is required, this can be implemented with an external transistor (npn). Pulse input When controlling motor operation from the PWMIN pin, the EI– pin must be connected to ground, and the EI+ pin must be connected to the TOC pin. Note that since the PWM oscillator is also used as the clock for internal circuits, a capacitor (about 2000 pF) must be connected to the PWM pin even if the PWMIN pin is used for motor control. 6. Hall Input Signals A signal input with an amplitude in excess of the hysteresis (80 mV maximum) is required for the Hall inputs. Considering the possibility of noise and phase displacement, an even larger amplitude is desirable. If disruptions to the output waveforms (during phase switching) or to the HP output (Hall signal output) occur due to noise, this must be prevented by inserting capacitors across the inputs. The constraint protection circuit uses the Hall inputs to discriminate the motor constraint state. Although the circuit is designed to tolerate a certain amount of noise, care is required when using the constraint protection circuit. If all three phases of the Hall input signal system go to the same input state, the outputs are all set to the off state (the UL, VL, WL, UH, VH, and WH outputs all go to the low level). If the outputs from a Hall IC are used, fixing one side of the inputs (either the + or – side) at a voltage within the common-mode input voltage range allows the other input side to be used as an input over the 0 V to VCC range. 7. Undervoltage Protection Circuit The undervoltage protection circuit turns one side of the outputs (UH, VH, and WH) off when the LVS pin voltage falls below the minimum operation voltage (see the Electrical Characteristics). To prevent this circuit from repeatedly turning the outputs on and off in the vicinity of the protection operating voltage, this circuit is designed with hysteresis. Thus the output will not recover until the operating To the power voltage rises 0.5 V (typical). supply detected The protection operating voltage detection level is set up for 5 V systems. The detected voltage level can be increased by shifting the voltage by To the LVS pin inserting a zener diode in series with the LVS pin to shift the detection level. The LVS influx current during detection is about 75 μA. To increase the diode current to stabilize the zener diode voltage rise, insert a resistor between the LVS pin and ground. If the LVS pin is left open, the internal pull-down resistor will result in the IC seeing a ground level input, and the output will be turned off. Therefore, a voltage in excess of the LVS circuit clear voltage (about 4.4 V) must be applied to the LVS pin if the application does not use the undervoltage protection circuit. The maximum rating for the LVS pin applied voltage is 18 V. 8. Constraint Protection Circuit When the motor is physically constrained (held stopped), the CSD pin external capacitor is charged (to about 3.0 V) by a constant current of about 2.25 μA and is then discharged (to about 1.0 V) by a constant current of about 0.15 μA. This process is repeated, generating a sawtooth waveform. The constraint protection circuit turns motor drive on and off repeatedly based on this sawtooth waveform. (The UH, VH, and WH side outputs are turned on and off.) Motor drive is on during the period the CSD pin external capacitor is being charged from about 1.0 V to about 3.0 V, and motor drive is off during the period the CSD pin external capacitor is being discharged from about 3.0 V to about 1.0 V. The IC and the motor are protected by this repeated drive on/off operation when the motor is physically constrained. The motor drive on and off times are determined by the value of the connected capacitor C (in μF). TCSD1 (drive on period)  0.89  C (seconds) TCSD2 (drive off period)  13.3  C (seconds) When a 0.47 μF capacitor is connected externally to the CSD pin, this iterated operation will have a drive on period of about 0.4 seconds and a drive off period of about 6.3 seconds. www.onsemi.com 14 LB11697V While the motor is turning, the discharge pulse signal (generated once for each Hall input period) that is created by combining the Hall inputs internally in the IC discharges the CSD pin external capacitor. Since the CSD pin voltage does not rise, the constraint protection circuit does not operate. When the motor is physically constrained, the Hall inputs do not change and the discharge pulses are not generated. As a result, the CSD pin external capacitor is charged by a constant current of 2.25 μA to about 3.0 V, at which point the constraint protection circuit operates. When the constraint on the motor is released, the constraint protection function is released. Connect the CSD pin to ground if the constraint protection circuit is not used. 9. Forward/Reverse Direction Switching This IC is designed so that through currents (due to the output transistor off delay time when switching) do not flow in the output when switching directions when the motor is turning. However, if the direction is switched when the motor is turning, current levels in excess of the current limiter value may flow in the output transistors due to the motor coil resistance and the motor back EMF state when switching. Therefore, designers must consider selecting external output transistors that are not destroyed by those current levels or only switching directions after the speed has fallen below a certain speed. 10. Handling Different Power Supply Types When this IC is operated from an externally supplied 5 V power supply (4.5 to 5.5 V), short the VCC pin to the VREG pin and connect them to the external power supply. When this IC is operated from an externally supplied 12 V power supply (8 to 17 V), connect the VCC pin to the power supply. (The VREG pin will generate a 5 V level to function as the control circuit power supply.) 11. Power Supply Stabilization Since this IC uses a switching drive technique, the power supply line level can be disturbed easily. Therefore capacitors with adequate capacitance to stabilize the power supply line must be inserted between VCC and ground. If diodes are inserted in the power supply lines to prevent destruction if the power supply is connected with reverse polarity, the power supply lines are even more easily disrupted, and even larger capacitors are required. If the power supply is turned on and off by a switch, and if there is a significant distance between that switch and the stabilization capacitor, the supply voltage can be disrupted significantly by the line inductance and surge current into the capacitor. As a result, the withstand voltage of the device may be exceeded. In application such as this, the surge current must be suppressed and the voltage rise prevented by not using ceramic capacitors with a low series impedance, and by using electrolytic capacitors instead. 12. VREG Stabilization To stabilize the VREG voltage, which is the control circuit power supply, a 0.1 μF or larger capacitor must be inserted between the VREG pin and ground. The ground side of this capacitor must connected to the IC ground pin with a line that is as short as possible. www.onsemi.com 15 LB11697V ORDERING INFORMATION Device LB11697V-TLM-E Package SSOP30 (275mil) (Pb-Free) LB11697V-W-AH SOP30 (275mil) (Pb-Free / Halogen Free) Shipping (Qty / Packing) 1000 / Tape & Reel 1000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 16