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LB11850VA-TLM-E

LB11850VA-TLM-E

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SSOP24

  • 描述:

    IC MTRDRV 4.5-5.5/5.5-16V 24SSOP

  • 数据手册
  • 价格&库存
LB11850VA-TLM-E 数据手册
LB11850VA Single‐phase Full‐wave Pre‐driver with Speed Control Function for Fan Motor www.onsemi.com Monolithic Digital IC Overview The LB11850VA is a single-phase bipolar fan motor driver with speed control function that works with a speed feedback signal. A highly efficient, quiet and low power consumption motor driver circuit, with a high speed accuracy and large variable speed can be implemented by adding a small number of external components. This pre-driver is optimal for driving large scale fan motors (with large air volume and large current) such as those used in servers and consumer products. SSOP24 CASE 565AR MARKING DIAGRAM Functions and Features • Pre-driver for Single-phase Full-wave Drive PMOS-NMOS is Used as an External Power TR, Enabling High-efficiency and Low-power-consumption Drive by Means of the Low-saturation Output and Single-phase Full-wave Drive On-chip Speed Control Circuit ♦ The Speed Control (Closed Loop Control) Using a Speed Feedback Signal Makes it Possible to Achieve Higher Speed Accuracy and Lower Speed Fluctuations when Supply Voltage Fluctuates or Load Fluctuates, Compared with an Open-loop Control System. Separately Excited Upper Direct PWM Control Method is Used as the Variable-speed Control System External PWM Input or Analog Voltage Input Enabling Variable Speed Control ♦ The Speed Control Input Signal is Compatible with PWM Duty Ratio or Analog Voltages On-chip Soft Start Circuit Lowest Speed Setting Pin ♦ The Lowest Speed can be Set with the External Resistor Current Limiter Circuit Incorporated ♦ Chopper Type Current Limit at Start or Lock Reactive Current Cut Circuit Incorporated ♦ Reactive Current before Phase Change is Cut to Enable Silent and Low-consumption Drive Constraint Protection and Automatic Reset Functions Incorporated FG (Speed Detection), RD (Lock Detection) Output Constant-voltage Output Pin for Hall Bias XXXXXXXXXX YMDDD ♦ • • • • • • • • • XXXXX Y M DDD = Specific Device Code = Year = Month = Additional Traceability Data PIN ASSIGNMENT 24 1 OUT2P OUT1P OUT2N OUT1N VCC SGND 5VREG SENSE CVI C CVO EO CTL EI RC LIM SOFT CT CPWM IN+ FG HB RD IN− 12 (Top View) 13 ORDERING INFORMATION See detailed ordering and shipping information on page 14 of this data sheet. © Semiconductor Components Industries, LLC, 2013 March, 2018 − Rev. 1 1 Publication Order Number: LB11850VA/D LB11850VA SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Symbol VCC max Parameter Conditions Ratings Unit VCC Maximum Supply Voltage 18 V IOUTN max OUTN Pin Maximum Output Current 20 mA IOUTP max OUTP Pin Maximum Sink Current 20 mA VOUT max OUT Pin Output Withstand Voltage 18 V HB HB Maximum Output Current 10 mA CTL, C max CTL, C Pin Withstand Voltage 7 V CVI, LIM Pin Withstand Voltage 7 V RD/FD Output Pin Output Withstand Voltage 19 V RD/FG Output Current 10 mA CVI, LIM max FG max I5VREG max Pd max 5VREG Pin Maximum Output Current Allowable Power Dissipation Mounted on a specified board (Notes 1, 2) 10 mA 0.9 W Topr Operating Temperature Range −30 to +95 °C Tstg Storage Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted on a specified board: 114.3 mm × 76.1 mm × 1.6 mm, glass epoxy. 2. Tj max = 150_C. Use the device in a condition that the chip temperature does not exceed Tj = 150_C during operation. RECOMMENDED OPERATING RANGES (TA = 25°C) Parameter Symbol Conditions Ratings Unit VCC1 VCC Supply Voltage 1 VCC pin 5.5 to 16 V VCC2 VCC Supply Voltage 2 When VCC − 5VREG shorted 4.5 to 5.5 V VCTL CTL Input Voltage Range 0 to 5VREG V VLIM LIM Input Voltage Range 0 to 5VREG V VCVI VCI Input Voltage Range 0 to 5VREG V VICM Hall Input Common Phase Input Voltage Range 0.2 to 3 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 12 V, unless otherwise specified) Parameter Symbol ICC1 Circuit Current ICC2 5VREG Typ Max Unit During drive Conditions Min 12 15 mA During lock protection 12 15 mA 5VREG Voltage I5VREG = 5 mA 4.8 5.0 5.2 V VHB HB Voltage IHB = 5 mA 1.05 1.20 1.35 V VLIM Current Limiter Voltage 190 210 230 mV VCRH CPWM Pin H Level Voltage 2.8 3.0 3.2 V VCRL CPWM Pin L level Voltage 0.9 1.1 1.3 V ICPWM1 CPWM Pin Charge Current VCPWM = 0.5 V 24 30 36 mA ICPWM2 CPWM Pin Discharge Current VCPWM = 3.5 V 21 27 33 mA FPWM CPWM Oscillation Frequency C = 220 pF 30 www.onsemi.com 2 kHz LB11850VA ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 12 V, unless otherwise specified) (continued) Symbol Parameter Conditions Min Typ Max Unit VCTH CT Pin H Level Voltage 2.8 3.0 3.2 V VCTL CT Pin L Level Voltage 0.9 1.1 1.3 V ICT1 CT Pin Charge Current VCT = 2 V 1.6 2.0 2.5 mA ICT2 CT Pin Discharge Current VCT = 2 V 0.16 0.20 0.25 mA RCT CT Pin Charge/Discharge Current Ratio ICT1/ICT2 8 10 12 times OUTN Pin Output H Voltage IO = 10 mA − VCC−0.85 VCC−1.0 V VONL OUTN Pin Output L Voltage IO = 10 mA − 0.9 1.0 V VOPL OUTP Pin Output L Voltage IO = 10 mA − 0.5 0.65 V VHN Hall Input Sensitivity IN+, IN− difference voltage (including offset and hysteresis) − ±15 ±25 mV VFGL FG Output L Voltage IFG = 5 mA − 0.15 030 mA IFGL FG Pin Leak Current VFG = 19 V − − 30 mA VRDL RD Output L Voltage IRD = 5 mA − 0.15 0.30 V IRDL RD Pin Leak Current VRD = 19 V − − 30 mA VEOH EO Pin Output H Voltage IEO1 = −0.2 mA VREG−1.2 VREG−0.8 − V IEO1 = 0.2 mA VONH VEOL EO Pin Output L Voltage − 0.8 1.1 V VRCH RC Pin Output H Voltage 3.2 3.45 3.7 V VRCL RC Pin Output L Voltage 0.7 0.8 1.05 V RC Pin Clamp Voltage 1.3 1.5 1.7 V VCTLH CTL Pin Input H Voltage 2.0 − VREG V VCTLL CTL Pin Input L Voltage 0 − 1.0 V VCTLO CTL Pin Input Open Voltage VREG−0.5 − VREG V ICTLH CTL Pin H Input H Current VFGIN = 5VREG −10 0 10 mA ICTLL CTL Pin L Input L Current VFGIN = 0 V −120 −90 − mA VRCCLP VCH C Pin Output H Voltage VREG−0.3 VREG−0.1 − V VCL C Pin Output L Voltage 1.8 2.0 2.2 V IBLIM LIM Pin Input Bias Current −1 − 1 mA VILIM LIM Pin Common Phase Input Voltage Range 2.0 − VREG V ICSOFT SOFT Pin Charge Current 1.0 1.3 1.6 mA VISOFT SOFT Pin Operating Voltage Range 2.0 − VREG V IB(VCI) CVI Pin Input Bias Current −1 − 2 mA CVI Pin Common Phase Input Voltage Range 2.0 − VREG V − V 2.2 V VIVCI VOH(VCO) CVO Pin Output H Level Voltage VOL(VCO) Output L Level Voltage VREG−0.35 VREG−0.2 1.8 2.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Design target value and si not measured. www.onsemi.com 3 LB11850VA 1.2 Mounted on a specified board: 114.3 × 76.1 × 1.6 mm glass epoxy Allowable Power Dissipation, Pd max − W 1.0 0.9 0.8 0.6 0.4 0.2 0.0 −30 0 90 95 60 30 120 Ambient Temperature, TA − 5C Figure 1. Pd max − TA TRUTH TABLE − LOCK PROTECTION CPWM = H IN− IN+ CT OUT1P OUT1N OUT2P OUT2N FG Mode H L L L L OFF H L OUT1 → 2 drive L H OFF H L L OFF OUT2 → 1 drive OFF L OFF H L Lock protection OFF H OFF L OFF OUT1P OUT1N OUT2P OUT2N Mode H L L H H TRUTH TABLE − SPEED CONTROL CT = L EO CPWM IN− L H H L L L OFF H OUT1 → 2 drive L H OFF H L L OUT2 → 1 drive H L OFF L OFF H Regeneration mode L H OFF H OFF L H L IN+ www.onsemi.com 4 VCC 5 www.onsemi.com Figure 2. Block Diagram CTL signal CTL C CVO CVI SOFT LIM RC 5VREG VCC CTL VREF 1shot− multi VREG EI EDEG Thermal shut down FG EO FG RD IN+ IBL01797 HALL HB HallBias CT IN− CPWM Oscillation CONTROL CIRCUIT SENSE 5VREG Discharge circuit GND OUT2P OUT2N OUT1P OUT1N LB11850VA BLOCK DIAGRAM LB11850VA APPLICATION CIRCUIT *3 1 mF/25 V Rp = 1 kW 1) 3) 2) 4) 100 W RF 1 mF/25 V RFG/RPD = 10 kW to 100 kW *2 V CC 5VREG *9 FG RD RC *8 *7 SENSE LIM LB11850VA SOFT CVI CVO OUT1P 1) OUT1N 2) OUT2P 3) OUT2N 4) HB IN− C CTL signal *4 IN+ CTL CT *5 EI EO CPWM SGND *1 Figure 3. Sample Application Circuit www.onsemi.com 6 H *6 CT = 1 mF CP = 220 pF 30 kHz LB11850VA DESCRIPTION OF PRE-DRIVER BLOCK *6: This is the pin to connect capacitor for lock detection. Constant-current charging and constant-current discharging circuits are incorporated. When the pin voltage becomes 3.0 V, the safety lock is applied, and when it lowers to 1.0 V, the lock protection is reset. Connect this pin to GND when it is not in use (when lock protection is not required). *7: This is the pin for current limiter detection. When the pin voltage exceeds 0.21 V, current limiting is applied, and the low-side regeneration mode is established. Connect this pin to GND when it is not in use. *8: Lock detection pin. This is the open collector output, which outputs “L” during rotation and “H” at stop. This pin is left open when it is not in use. *9: Speed detection pin. This is the open collector output, which can detect the rotation speed using the FG output according to the phase change. This pin is left open when it is not in use. *1: SGND is connected to the control circuit power supply system. *2: For the signal-side power stabilization capacitor, the capacitance of more than 0.1 mF is used. Connect the capacitor between VCC and GND with the thick pattern and along the shortest route. *3: For the power-side power stabilization capacitor, the capacitance of more than 0.1 mF is used. Connect the capacitor between power-side power supply and GND with the thick pattern and along the shortest route. *4: Hall signal input pins. Wiring needs to be short to prevent carrying noise. If noise is carried, insert a capacitor between IN+ and IN−. The Hall input circuit is a comparator having a hysteresis of 15 mV. It has a ±30 mV (input signal difference voltage) soft switch zone. It is recommended that the Hall input level is 100 mV (p−p) at the minimum. *5: This is the pin to connect capacitor for generating the PWM basic frequency. Use of CP = 220 pF produces oscillation at the frequency of 30 kHz which serves as the PWM basic frequency. Since this pin is also used for the current limiter reset signal, the capacitor must be connected without fail even when no speed control is implemented. www.onsemi.com 7 LB11850VA DESCRIPTION OF SPEED CONTROL BLOCK 1. Speed Control Diagram The speed slope is determined by the constant of the RC pin. (RPM) CR time constant large CR time constant small Rotation speed Minimum speed Determined by LIM pin voltage Small ← CTL signal (PWMDUTY) → Large 0% 100% Large ← EO pin voltage (V) → Small Minimum speed setting rotation Variable speed ON−Duty small Full speed ON−Duty large CTL pin 5VREG LIM voltage EO pin EO voltage 0V Figure 4. Speed Control Diagram 2. Timing at Startup (Soft Start) VCC pin CTL pin Stop Full speed Soft start The slope changes according to the capacitance of SOFT pin. (Large → Large of slope) SOFT pin Stop Full speed Figure 5. Timing at Startup (Soft Start) www.onsemi.com 8 LB11850VA 3. Additional Description of Operations: The LB11850 forms a feedback loop inside the IC so that the FG period (motor speed) corresponding to the control voltage is established by inputting the duty pulse. LB11850VA FG CTL signal CTL Speed control block Closed Feed−back Loop Pre−driver block CONTROL SIGNAL Figure 6. Additional Description of Operations The operation inside the IC is as follows. Pulse signals are created from the edges of the FG signals as shown in the figure below, and a waveform with a pulse width which is determined by the CR time constants and which uses these edges as a reference is generated by a one-shot multivibrator. These pulse waveforms are integrated and the duty ratio of the pre-driver output is controlled as a control voltage. FG EDGE pulse Slope due to CR time constant RC pin 1 shot output TRC(s) = 1.15RC Figure 7. Pulse Waveforms Furthermore, by changing the pulse width as determined by the CR time constant, the VCTL versus speed slope can be changed as shown in the speed control diagram of the previous section. However, since the pulses used are determined by the CR time constant, the variations in CR are output as-is as the speed control error. www.onsemi.com 9 LB11850VA 4. Procedure for Calculating Constants: The slope shown in the speed control diagram is determined by the constant of the RC pin. (RPM) Motor at maximum speed 0% CTL Duty(%) 100% Figure 8. 1) Obtain FG signal frequency fFG (Hz) of the maximum speed of the motor. (With FG2 pulses per rotation) fFG (Hz) = 2 rpm / 60 .... 2) Obtain the time constant which is connected to the RC pin. (Have “DUTY” (example: 100% = 1.0, 60% = 0.6) serve as the CTL duty ratio at which the maximum speed is to be obtained.) R × C = DUTY / (3.3 × 1.1 × fFG) .... 3) Obtain the resistance and capacitance of the capacitor. Based on the discharge capacity of the RC pin, the capacitance of the capacitor which can be used is 0.01 to 0.015 mF. Therefore, find the appropriate resistance using equation or below from the result of above. R = (R × C) / 0.01 mF .... R = (R × C) / 0.015 mF .... The temperature characteristics of the curve are determined by the temperature characteristics of the capacitor of the RC pin. When temperature-caused fluctuations in the speed are to be minimized, use a capacitor with good temperature characteristics. www.onsemi.com 10 LB11850VA These pins determine the position of the slope origin. (When the origin point is at (0%, 0 rpm), CVO and CVI are shorted.) 1) Movement along the X-axis (resistance divided between CVO and GND) (RPM) Motor at maximum speed Move in the direction of the X−axis CTL Duty(%) 0% 100% Figure 9. (Example) In the case where the characteristics change from ones with the origin point (0%, 0 rpm) to ones where the speed at a duty ratio of 30% becomes the speed at 0%: First, obtain the input voltage of the CVI pin required at 0%. CVI = 5 − (3 × duty ratio) = 5 − (3 × 0.3) = 5 − 0.9 = 4.1 V Next, obtain the resistances at which the voltage becomes 4.1 V by dividing the resistance between CVO and GND when CVO is 5 V. The ratio of CVO−CVI: CVI−GND is 0.9 V : 4.1 V = 1 : 4.5. Based on the above, the resistance is 20 kW between CVO and CVI and 91 kW between CVI and GND. Furthermore, the slope changes. (In the case of the example given, since the resistance ratio is 1 : 4.5, the slope is now 4.5/5.5 = 0.8 times what it was originally.) If necessary, change the resistance of the RC pin, and adjust the slope. LIM VREF SOFT CVI R4 CVO R5 C CTL CTL Figure 10. www.onsemi.com 11 LB11850VA 2) Movement along the Y-axis (resistance divided between CVO and VCC) (RPM) Motor at maximum speed Move in the direction of the Y−axis CTL Duty(%) 0% 100% Figure 11. (Example) In the case where the characteristics change from ones with the origin point (0%, 0 rpm) to ones where the speed at a duty ratio of 25% becomes 0 rpm: First, obtain the CVO pin voltage required for the CVI voltage to be 5 V at 25%. CVO = 5 − (3 × duty ratio) = 5 − (3 × 0.25) = 5 − 0.75 = 4.25 V With CVO = 4.25 V, find the resistances at which CVI = 5 V. The ratio of CVO−CVI : CVI−GND is 0.75 V : 7 V = 1 : 9.3. Based on the above, the resistance is 20 kW between CVO and CVI and 180 kW between CVI and VCC. (Due to the current capacity of the CVO pin, the total resistance must be set to 100 kW or more.) Furthermore, the slope changes. (In the case of the example given, since the resistance ratio is 1 : 9.3, the slope is now 9.3/10.3 = 0.9 times what it was originally.) If necessary, change the resistance of the RC pin, and adjust the slope. VCC LIM VREF SOFT R4 CVI CVO C CTL CTL Figure 12. www.onsemi.com 12 LB11850VA The minimum speed is determined by the voltage of the LIM pin. (RPM) Maximum speed 10000 8000 6000 4000 Minimum speed setup 2000 0% 5V 100% 2V CTL Duty(%) CVO pin voltage (V) Figure 13. 1) Obtain the ratio of the minimum speed required to the maximum speed. Ra = Minimum speed/maximum speed .... In the example shown in the figure above, Ra = minimum speed/maximum speed = 3000/10000 = 0.3. 2) Obtain the product of the duty ratio at which the maximum speed is obtained and the value in equation . Ca = Duty ratio at maximum speed × Ra .... In this example, Ca = duty ratio at maximum speed × Ra = 0.8 × 0.3 = 0.24. 3) Obtain the required LIM pin voltage. LIM = 5 − (3 × Ca) .... In this example, LIM = 5 − (3 × Ca) = 5 − (3 × 0.24) ≈ 4.3 V. 4) Divide the resistance of 5VREG, and generate the LIM voltage. In this example, the voltage is 4.3 V so the resistance ratio is 1 : 6. The resistance is 10 kW between 5VREG and LIM and 62 kW between LIM and GND. 5VREG LIM VREF SOFT CVI Figure 14. www.onsemi.com 13 LB11850VA In order to connect a capacitor capable of smoothing the pin voltage to the C pin, the correlation given in the following equation must be satisfied when f (Hz) serves as the input signal frequency of the CTL pin. (R is contained inside the IC, and is 180 kW (typ.).) 1/f = t < CR The higher the capacitance of the capacitor is, the slower the response to changes in the input signal is. 5VREG Connect a capacitor capable of smoothing the pin voltage 1/f = t < CR CTL pin input inverted waveform (same frequency) C pin CTL Pin CTL Circuit VREF Circuit 180 kW Figure 15. ORDERING INFORMATION Device Package Wire Bond Shipping† (Qty / Packing) LB11850VA−TLM−E SSOP24 (225mil) (Pb−Free) Au−wire 2,000 / Tape & Reel LB11850VA−TLM−H SSOP24 (225mil) (Pb−Free / Halogen Free) Au−wire 2,000 / Tape & Reel LB11850VA−W−AH SSOP24 (225mil) (Pb−Free / Halogen Free) Cu−wire 2,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 14 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SSOP24 (225mil) CASE 565AR ISSUE A DATE 23 OCT 2013 SOLDERING FOOTPRINT* 5.80 1.0 (Unit: mm) 0.32 GENERIC MARKING DIAGRAM* XXXXXXXXXX YMDDD 0.50 NOTE: The measurements are not to guarantee but for reference only. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON66069E SSOP24 (225MIL) XXXXX = Specific Device Code Y = Year M = Month DDD = Additional Traceability Data *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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